Abstract: A single-operator laparoscope auxiliary operating device is provided, including a laparoscope and universal rotating mechanisms, wherein two universal rotating mechanisms are provided on the laparoscope, each of the universal rotating mechanisms includes a ball sleeve and a sleeve plate, the ball sleeve is slidably sleeved on the laparoscope, the sleeve plate is sleeved in a middle of the ball sleeve, and the ball sleeve is universally rotatable on the sleeve plate; a direction controlling mechanism; a moving mechanism; a supporting mechanism; a connecting frame, one end of the connecting frame is fixedly connected to the sleeve plate close to the lens of the laparoscope, and another end of the connecting frame is fixedly connected to the supporting mechanism; and a foot controller connected to the direction controlling mechanism and the moving mechanism.

Abstract: A packaging structure of a film bulk acoustic resonator includes a resonant cavity main structure that includes a first substrate and a film bulk acoustic resonant structure over the first substrate with a first cavity formed there-between. A resonator cover includes a second substrate and an elastic bonding material layer that has lost elasticity and is sandwiched between the second substrate and the film bulk acoustic resonant structure. The elastic bonding material layer contains a second cavity, and the second cavity is at least partially aligned with the first cavity. A through-hole is formed through the resonator cover on a periphery of the second cavity and exposes a corresponding electrical connection part of the film bulk acoustic resonant structure. A conductive interconnection layer covers a sidewall of the through-hole and a portion of a surface of the resonator cover on a periphery of the through-hole.

Abstract: A packaging method and a packaging structure of a film bulk acoustic resonator are provided. The packaging method includes: providing a resonant cavity main structure including a first substrate and a film bulk acoustic resonant structure having a first cavity formed therebetween; forming a resonator cover by providing a second substrate and forming an elastic bonding material layer containing a second cavity; bonding the resonant cavity main structure and the resonator cover together through the elastic bonding material layer and removing elasticity of the elastic bonding material layer, where the second cavity is at least partially aligned with the first cavity; forming a through-hole penetrating through the resonator cover and exposing a corresponding electrical connection part of the film bulk acoustic resonant structure; and forming a conductive interconnection layer on a sidewall of the through-hole and on a portion of a surface of the resonator cover.

Abstract: A film bulk acoustic resonator and fabrication method are provided. The film bulk acoustic resonator includes a carrier substrate, a support layer bonded to the carrier substrate and enclosing a cavity exposing a portion of the carrier substrate, a piezoelectric stacked-layer structure located above the support layer to cover the cavity and including a first electrode, a piezoelectric layer, and a second electrode stacked in sequence from bottom to top, and first and second bumps disposed at a boundary of an effective resonance region where the first electrode, the piezoelectric layer, and the second electrode above the cavity overlap each other in a direction perpendicular to a surface of the piezoelectric layer. The first and second bumps are disposed at sides of the first and second electrodes, respectively. At least one of projections of the first and second bumps on a plane where the piezoelectric layer is located includes a ring shape that includes an unclosed or closed ring.

Abstract: A microelectromechanical systems (MEMS) device includes: a surface acoustic wave (SAW) filter including an interdigital transducer; a first structural layer disposed over the SAW filter; and a bulk acoustic wave (BAW) filter disposed over the first structural layer. The BAW filter includes a supporting substrate, an acoustic reflective structure disposed over the supporting substrate, and a piezoelectric stack structure disposed over the acoustic reflective structure. The piezoelectric stack structure includes a first electrode, a piezoelectric layer, and a second electrode. The first structural layer includes a first cavity covered by an effective resonance region of the piezoelectric stack structure and the interdigital transducer of the SAW filter.

Abstract: A fabrication method of a MEMS device includes providing a logic circuit chip including a substrate and a CMOS circuit disposed on the substrate, forming a first structural layer on the logic circuit chip, and forming a first isolation groove on the first structural layer; providing a BAW filter including a supporting substrate, a support layer formed on the supporting substrate, and a piezoelectric stack structure, the piezoelectric stack structure forming a second cavity with the supporting substrate and the support layer, and piezoelectric stack structure including a second electrode, a piezoelectric layer, and a first electrode that are sequentially stacked; and bonding the BAW filter to the first structural layer on the logic circuit chip, such that the first isolation groove is disposed between the logic circuit chip and the BAW filter to form a first cavity where an effective resonance region of the piezoelectric stack structure is located.

Abstract: Method for fabricating a photodetector includes providing a first substrate containing pixel circuits and common electrode connection members formed therein. A first wiring board material layer is formed on the first substrate and electrically connected to the pixel circuits. A second wiring board material layer is formed on a second substrate and electrically connected to the pixel layers formed therein. The first and second wiring board material layers are bonded. The second substrate, and the second and first wiring board material layers are etched to form through holes with isolation wall members formed therein, the through holes dividing the pixel layer, and the second and first wiring board material layers into pixel units, and second and first wiring boards. Each isolation wall member includes a conductive member and a sidewall between the conductive member and the pixel unit. A transparent electrode layer is formed on the second substrate.

Abstract: Thin-film bulk acoustic resonator, forming method and filter are provided. The thin-film bulk acoustic resonator includes: a first substrate, an upper surface of the first substrate being provided with a first cavity; a piezoelectric stack structure, disposed on the upper surface of the first substrate and covering the first cavity, the piezoelectric stack structure including a second electrode, a piezoelectric layer and a first electrode which are sequentially stack from bottom to top; a groove, including a first groove and/or a second groove, the first groove penetrating through the first electrode and extending into or penetrating through the piezoelectric layer, the second groove penetrating the second electrode and extending into or penetrating through the piezoelectric layer; and a reinforcement layer, disposed on at least one side of the first electrode or the second electrode at a bottom of the groove.

Abstract: The present disclosure provides a film piezoelectric acoustic resonator. The resonator includes an upper electrode, a piezoelectric layer and a lower electrode which are stacked sequentially from a top to a bottom. A projection of the effective resonance region along a direction of the piezoelectric layer is a hexagon. The hexagon has a first side with a longest length, a second side opposite to the first side, a third side with a shortest length, and a fourth side opposite to the third side. A portion of the upper electrode extending out of the effective resonance region through a first boundary of the effective resonance region is defined as an upper electrode led-out portion; a portion of the lower electrode extending out of the effective resonance region through a second boundary of the effective resonance region is defined as a lower electrode led-out portion.

Abstract: Wafer-level packaging structure is provided. First chips are bonded to the device wafer. A first encapsulation layer is formed on the device wafer, covering the first chips. The first chip includes: a chip front surface with a formed first pad, facing the device wafer; and a chip back surface opposite to the chip front surface. A first opening is formed in the first encapsulation layer to expose at least one first chip having an exposed chip back surface for receiving a loading signal. A metal layer structure is formed covering the at least one first chip, a bottom and sidewalls of the first opening, and the first encapsulation layer, followed by an alloying treatment on the chip back surface and the metal layer structure to form a back metal layer on the chip back surface.

Abstract: The present disclosure provides a film bulk acoustic resonator and a method for fabricating the film bulk acoustic resonator. The resonator includes a carrier substrate; a support layer bonded on the carrier substrate, where the support layer encloses a first cavity exposing the carrier substrate; a piezoelectric stacked structure covering the first cavity, where the piezoelectric stacked structure includes a first electrode, a piezoelectric layer, and a second electrode which are stacked sequentially from a bottom to a top; and protrusions disposed at a boundary of an effective resonance region, where the protrusions are disposed on an upper surface or a lower surface of the piezoelectric stacked structure; or a part of the protrusions is disposed on the upper surface of the piezoelectric stacked structure, and another part of the protrusions is disposed on the lower surface of the piezoelectric stacked structure.

Abstract: The present disclosure provides a film piezoelectric acoustic wave filter and a fabrication method. The film piezoelectric acoustic wave filter includes a first substrate; a plurality of acoustic wave resonator units disposed on the first substrate, where each acoustic wave resonator unit includes a piezoelectric induction plate, and a first electrode and a second electrode which are opposite to each other for applying a voltage to the piezoelectric induction plate; and further includes a capping layer on the first substrate, where the capping layer includes a plurality of sub-caps, a sub-cap of the plurality of sub-caps surrounds an acoustic wave resonator unit of the plurality of acoustic wave resonator units to form a first cavity between the acoustic wave resonator unit and the sub-cap, and a separation portion is disposed between adjacent sub-caps to isolate adjacent first cavities.

Abstract: A composite substrate, a surface acoustic wave resonator and their fabricating method are provided. The fabricating method of the composite substrate includes: providing a first substrate; forming a liner layer including at least a polycrystalline material layer on the first substrate; depositing a piezoelectric sensing film for generating acoustic resonance on the polycrystalline material layer by a physical or chemical deposition method; and performing recrystallization annealing treatment on the piezoelectric sensing film, to make the piezoelectric sensing film reach a polycrystalline state. The recrystallization annealing treatment includes a heating process and a cooling process, and the heating process includes heating the piezoelectric sensing film to make the piezoelectric sensing film reach a molten state.

Abstract: A thin film piezoelectric acoustic wave resonator and a manufacturing method therefor, and a filter. The film piezoelectric acoustic wave resonator includes: a first base, a first electrode, a piezoelectric plate body, a second electrode and an isolation cavity, wherein the first electrode, the piezoelectric plate body and the second electrode are arranged on a first surface of the first base and are stacked sequentially from top to bottom; the first electrode, the piezoelectric plate body and the second electrode are provided with an overlapping region in a direction perpendicular to the surface of the piezoelectric plate body; in the overlapping region, a gap is formed between the piezoelectric plate body and the first electrode; the isolation cavity surrounds the periphery of the piezoelectric plate body; and the gap communicates with the isolation cavity.

Abstract: A wafer-level package structure is provided, including a device wafer integrated with a first chip. The device wafer includes a first front surface integrated with the first chip and a first back surface opposite to the first front surface. A first oxide layer is formed on the first front surface. A second chip is provided to include a bonding surface, on which a second oxide layer is formed. A carrier substrate is provided to be temporarily bonded with the surface of the second chip that faces away from the bonding surface. The second chip is bonded with the device wafer through bonding the first and the second oxide layers using a fusion bonding process. The second chip and the carrier substrate are debonded. An encapsulation layer is formed on the first oxide layer and covers the second chip.

Abstract: A thin film piezoelectric acoustic wave resonator and a manufacturing method therefor, and a filter. The thin film piezoelectric acoustic wave resonator includes: a first base, an upper electrode, a piezoelectric plate body, a lower electrode and an isolation cavity. The upper electrode, the piezoelectric plate body and the lower electrode are arranged on an upper surface of the first base and are stacked sequentially from top to bottom. The upper electrode, the piezoelectric plate body and the lower electrode have an overlapping region in a direction perpendicular to the surface of the piezoelectric plate body, in which a first gap is formed between the piezoelectric plate body and the upper electrode, and a second gap is formed between the piezoelectric plate body and the lower electrode. The isolation cavity surrounds the periphery of the piezoelectric plate body and connects the first and second gaps together. At least one connecting bridge is arranged between the piezoelectric plate body and the base.

Abstract: The present disclosure provides a mask plate and fabrication method thereof. The mask plate includes a substrate, having a first surface and a second surface, and containing a plurality of openings. The mask plate also includes a mask pattern layer, formed on the first surface of the substrate and including a plurality of pattern regions and a shield region surrounding the plurality of pattern regions. Each pattern region includes at least one through hole, and each opening formed in the substrate exposes a pattern region and the at least one through hole in the pattern region. The mask plate further includes a top substrate layer, formed on the mask pattern layer. The top substrate layer contains a plurality of grooves passing through the top substrate layer, and each groove exposes a pattern region in the mask pattern layer and exposes the at least one through hole in the pattern region.

Abstract: The present invention discloses a composite substrate for manufacturing an acoustic wave resonator and a Surface Acoustic Wave (SAW) resonator, and a manufacturing method thereof.

Abstract: In a method for forming a film bulk acoustic resonator (FBAR), a bulk acoustic wave (BAW) film stack (120) and a support structure (130) are successively formed on a first substrate (100). The support structure (130) includes a primary support wall (131), an isolation wall (132) internal to the primary support wall (131) and a secondary support pillar (133) internal to the isolation wall (132). After a second substrate (200) is bonded and the first substrate (100) is removed, the secondary support pillar (133) and the isolation wall (132) are removed through a release window (120a) in an area delimited by the isolation wall (132).

Abstract: A wafer-level system-in-package (WLSiP) package structure is provided. The WLSiP package structure includes a device wafer, an adhesive layer, and a plurality of second chips. The device wafer includes a first front surface having a plurality of first chips integrated therein and a first back surface opposing the first front surface. The adhesive layer is formed on the first front surface of the device wafer and the adhesive layer includes a plurality of through-holes exposing the first front surface. The plurality of second chips are bonded to the device wafer, and the plurality of second chips are bonded with the adhesive layer to cover the plurality of first through-holes in a one-to-one correspondence.