Abstract: An example optical neural network includes a first layer having a laser responsive to an input signal to transmit an optical signal, a second layer having a photodetector to generate an electrical signal based on the optical signal, and a third layer having a memory array to store weights of the optical neural network, the third layer to generate an output signal based on the electrical signal and at least one of the weights.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to fully integrated optical coherent modulators on a silicon chip. These coherent modulators may be used to enable transmitters, receivers, transceivers, tunable lasers and other optical or electro-optical devices to be integrated on a silicon chip. In embodiments, the optical coherent modulators may be based on differential microring modulators that may be nested in a Mach-Zehnder Interferometer (MZI) configuration. Embodiments may also be directed to a miniaturized and fully integrated coherent modulators, which can enable terabit per second (Tbps) transceivers in a small form factor based on coherent modulation on a silicon chip. Other embodiments may be described and/or claimed.

Abstract: Integrated laser arrays, photonic devices, packages, and systems are disclosed. An example integrated laser array includes first and second lasers, each laser including a light-emitter structure and a waveguide with a grating. In one aspect, effective pitches of the gratings of the first and second lasers are different by less than about 5 angstroms, while the gratings of the first and second lasers are fabricated with a resolution of at least 1 nanometer. In another aspect, each laser includes a waveguide with left and right sidewall gratings, effective widths of the waveguides of the first and second lasers are different, and an offset between the left and right sidewall gratings of the second laser is different from an offset between the left and right sidewall gratings of the first laser. Integrated laser arrays described herein may be particularly suitable for being implemented in dense wavelength division multiplexed systems.

Abstract: The present disclosure is directed to photonic wavelength division multiplexing (WDM) receivers with polarization diversity and/or low reflectance. In embodiments, a WDM receiver is provided with a splitter, a plurality of waveguides and a plurality of photodetectors in series. The waveguides having particular equal path lengths relationship from the splitter to respective ones of the photodetectors. In other embodiments, the WDM receiver is provided with a splitter, a looped waveguide, a plurality of photodetectors, and a plurality of variable optical attenuators (VOAs). The VOAs are configured to suppress reflection of signal beams back to the transmitter. In various embodiments, the WDM receiver is a receiver sub-assembly of a silicon photonic transceiver disposed in a silicon package. Other embodiments may be described and/or claimed.

Abstract: Integrated photonic devices, packages, and systems are disclosed. An example photonic device includes a laser device with a laser cavity having three sections. The three sections include, respectively, an active region, a waveguide, and a grating arranged along a longitudinal axis of the cavity. Materials of these three sections of the laser device are selected so that a TOC of the grating is between a TOC of the active region and a TOC of the waveguide.

Abstract: Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure are directed to multi-wavelength laser generator may produce light with a frequency comb having equally spaced frequency lines. In various embodiments, the laser generator includes first, a semiconductor gain element is used to provide gain to the laser being generated. Second, a ring resonator filter, or ring filter, is used to select the wavelength comb spacing. Third, a narrow-band DBR or narrow-band mirror is used to select the number of wavelengths that lase. Fourth, a wide-band or narrow-band mirror is used to provide optical feedback and to form the optical cavity. Fifth, a phase tuner section is used to align the cavity modes with the ring resonances (i.e. the ring filter modes) in order to reduce or minimize the modal loss. Other embodiments may be described and/or claimed.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.

Abstract: Systems, apparatuses and methods include technology that executes, with a first plurality of panels, a first matrix-matrix multiplication operation of a first layer of an optical neural network (ONN) to generate output optical signals based on input optical signals that pass through an optical path of the ONN, and weights of the first layer of the ONN. The first plurality of panels includes an input panel, a weight panel and a photodetector panel. The executing includes generating, with the input panel, the input optical signals, where the input optical signals represent an input to the first matrix-matrix multiplication operation of the first layer of the ONN, representing, with the weight panel, the weights of the first layer of the ONN, and generating, with the photodetector panel, output photodetector signals based on the output optical signals that are generated based on the input optical signals and the weights.

Abstract: Embodiments herein relate to an optical system coupled with or including a control logic. The control logic may be configured to identify, based on feedback provided by a photodiode (PD) of an optical receiver, that an amplitude of an optical marker signal output by an interferometer of the optical receiver is above a threshold value. The control logic may further be configured to adjust, based on the identification, a thermo-optic phase tuner of the interferometer, wherein adjustment of the thermo-optic phase tuner results in a change to the amplitude of the optical marker signal. Other embodiments may be described and/or claimed.

Abstract: Various embodiments described herein may relate to apparatuses, systems, techniques, and/or processes that are directed to tunable lasers. Specifically, embodiments herein may relate to chips that include both a tunable laser portion as well as a WLL portion on a same silicon substrate. Other embodiments may be described and/or claimed.

Abstract: Embodiments disclosed herein include a package substrate. In an embodiment, the package substrate comprises a core where the core comprises glass. In an embodiment, the package substrate further comprises an optical waveguide over the core, and an optical phase change material over the optical waveguide.

Abstract: Technologies for beam expansion and collimation for photonic integrated circuits (PICs) are disclosed. In one embodiment, an ancillary die is bonded to a PIC die. Vertical couplers in the PIC die direct light from waveguides to flat mirrors on a top side of the ancillary die. The flat mirrors reflect the light towards curved mirrors defined in the bottom surface of the ancillary die. The curved mirrors collimate the light from the waveguides. In another embodiment, a cavity is formed in a PIC die, and curved mirrors are formed in the cavity. Light beams from waveguides in the PIC die are directed to the curved mirrors, which collimate the light beams.

Abstract: Technology for light detection and ranging (LIDAR) sensor can include an optical signal source, an optical modulation array and optical detector on the same integrated circuit (IC) chip, multi-chip module (MCM) or similar solid-state package.

Abstract: Embodiments may include or relate to an optical coupler. The optical coupler may include a silicon nitride (SiN) waveguide. The waveguide may be formed by placing SiN on an epitaxially grown silicon structure that is then removed subsequent to placement of the SiN. Other embodiments may be described and/or claimed.

Abstract: Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

Abstract: Embodiments herein relate to techniques for baseline wander (BLW) compensation. The technique may include identifying a data stream that is to be modulated by a ring modulator of an optical transmitter, wherein the data stream has a frequency operable to cause thermal-based BLW of an optical output of the optical transmitter. The technique may further include adjusting a time-varying direct current (DC) voltage bias of the ring modulator based on the frequency of the data stream. Other embodiments may be described and/or claimed.

Abstract: An apparatus comprising a substrate; a waveguide above the substrate; and an undercut into the substrate, the undercut beneath at least a portion of the waveguide, wherein a magnitude of a maximum length of the undercut is lower than a magnitude of a maximum depth of the undercut.