Abstract: An inter-channel phase difference (IPD) parameter extraction method and apparatus, where the extraction method includes obtaining a parameter obtaining an information extraction manner for a current frame of a multi-channel signal, obtaining an IPD parameter extraction manner for the current frame based on the parameter obtaining the information extraction manner, where the obtained IPD parameter extraction manner is one of at least two preset IPD parameter extraction manners, and obtaining an IPD parameter of the current frame based on the obtained IPD parameter extraction manner for the current frame.

Abstract: A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The semiconductor device also includes a plurality of transistors on the second semiconductor substrate, a deep trench isolation having a bottom at a surface of the first semiconductor substrate in the second region, the deep trench isolation exposing a sidewall of the second semiconductor substrate and a sidewall of the buried insulating layer, and a dielectric capping layer filling the deep trench isolation and covering the plurality of transistors on the second semiconductor substrate.

Abstract: A semiconductor device includes a first substrate having a first surface and a second surface opposite to the first surface, a shallow trench isolation in the first substrate, the shallow trench isolation having a first depth, the first depth being a distance from a bottom of the shallow trench isolation to the first surface of the first substrate, a transistor on the first surface of the first substrate, a first dielectric cap layer covering the first surface of the first substrate, a first interconnect structure on the first dielectric cap layer, a carrier substrate bonded to the first substrate through the first dielectric cap layer, a second dielectric cap layer on the second surface of the first substrate; and a through silicon via extending through the second dielectric cap layer, the shallow trench isolation, and the first dielectric cap layer, and connected to the first interconnect structure.

Abstract: A semiconductor device includes an inductor disposed on a surface of an intermetallic dielectric layer at a location below which no virtual interconnect members are present. Thus, parasitic capacitance is reduced or eliminated and the Q value of the inductor is high.

Abstract: A method for processing an audio signal, including: sound is converted to an analog audio input signal and converted into a digital audio signal; a windowed time domain signal is obtained and then a twiddled signal is obtained; the twiddled signal is pre-rotated and then an FFT is performed; an in-place fixed rotate compensation is performed on the FFT signal and then an post-rotated is performed; a quantized signal is obtained and then wrote into a bitstream for transmitting or storing.

Abstract: A method and an apparatus for determining a stability factor of an adaptive filter is presented. The method includes: determining, according to first input signal that are input to an adaptive filter, a reference input matrix of the first input signal; determining a stability parameter of the first input signal according to the reference input matrix; and determining a stability factor of the adaptive filter according to the stability parameter. According to the method and apparatus for determining a stability factor of an adaptive filter provided in the embodiments of the present application, the stability factor of the adaptive filter can be adaptively obtained according to a stability feature of the first input signal, and the adaptive filter can reach a balance between a convergence speed and steady state error performance.

Abstract: A method of forming a semiconductor device includes: providing a first substrate, forming at least one transistor on a first surface of the first substrate; forming a first dielectric cap layer covering the first surface of the first substrate; forming a first interconnect structure on the first dielectric cap layer; providing a carrier substrate; bonding the carrier substrate to the first substrate through the first dielectric cap layer; and from a second surface of the first substrate opposite to the first surface, thinning the first substrate to a second depth.

Abstract: A method for processing an audio signal, including: sound is converted to an analog audio input signal and converted into a digital audio signal; a windowed time domain signal is obtained and then a twiddled signal is obtained; the twiddled signal is pre-rotated and then an FFT is performed; an in-place fixed rotate compensation is performed on the FFT signal and then an post-rotated is performed; a quantized signal is obtained and then wrote into a bitstream for transmitting or storing.

Abstract: Systems and methods for data filtering and mining using multiple-level, composite-attribute tree-node diagrams to quickly select and analyze data of interest.

Abstract: An embodiment of the present invention discloses a data processing method, including: twiddling input data, so as to obtain twiddled data; pre-rotating the twiddled data by using a symmetric rotate factor, where the rotate factor is a·W4L2p+1, p=0, . . . , L/2?1, and a is a constant; performing a Fast Fourier (Fast Fourier Transform, FFT) transform of L/2 point on the pre-rotated data, where L is the length of the input data; post-rotating the data that has undergone the FFT transform by using a symmetric rotate factor, where the rotate factor is b·W4L2q+1, q=0, . . . , L/2?1, and b is a constant; and obtaining output data.

Abstract: A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.

Abstract: A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing methods are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and the second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film in this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

Abstract: A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film of this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

Abstract: A resonator may include a first dielectric member, a second dielectric member, and a composite member. The first dielectric member may have a first cavity. The composite member may include a piezoelectric layer and may overlap at least one of the first dielectric member and the second dielectric member. At least one of the second dielectric member and the composite member may have a second cavity. The piezoelectric layer may be positioned between the first cavity and the second cavity. A projection of the first cavity in a direction perpendicular to a flat side of the first dielectric member and a projection of the second cavity in the direction may intersect each other to form a polygon. No two edges of the polygon may be parallel to each other.

Abstract: A resonator may include a first dielectric member, a second dielectric member, a composite member, a first sealer, and a second sealer. The first dielectric member may have a first cavity. The second dielectric member may have a second cavity. The composite member may include a piezoelectric layer and may be positioned between the first cavity and the second cavity. The first sealer may be positioned between two portions of the first dielectric member. The first cavity may be positioned between the first sealer and the composite member. The second sealer may be positioned between two portions of the second dielectric member. The second cavity may be positioned between the second sealer and the composite member.

Abstract: A transistor device includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a gate structure disposed on the first surface and configured to form a channel region, and source and drain regions disposed on opposite sides of the channel region. The device also includes a source terminal and a drain terminal disposed on the second surface. The source and drain terminals are connected to the respective source and drain regions. The transistor device further include a body terminal disposed on the second surface and configured to connect the highest or lowest voltage supply to the semiconductor substrate.

Abstract: An audio signal processing method and apparatus and a differential beamforming method and apparatus to resolve a problem that an existing audio signal processing system cannot process audio signals in multiple application scenarios at the same time. The method includes determining a super-directional differential beamforming weighting coefficient, acquiring an audio input signal and determining a current application scenario and an audio output signal, acquiring, a weighting coefficient corresponding to the current application scenario, performing super-directional differential beamforming processing on the audio input signal using the acquired weighting coefficient in order to obtain a super-directional differential beamforming signal in the current application scenario, and performing processing on the formed signal to obtain a final audio signal required by the current application scenario.

Abstract: A method and an apparatus for determining a stability factor of an adaptive filter is presented. The method includes: determining, according to first input signal that are input to an adaptive filter, a reference input matrix of the first input signal; determining a stability parameter of the first input signal according to the reference input matrix; and determining a stability factor of the adaptive filter according to the stability parameter. According to the method and apparatus for determining a stability factor of an adaptive filter provided in the embodiments of the present application, the stability factor of the adaptive filter can be adaptively obtained according to a stability feature of the first input signal, and the adaptive filter can reach a balance between a convergence speed and steady state error performance.

Abstract: An embodiment of the present invention discloses a data processing method, including: twiddling input data, so as to obtain twiddled data; pre-rotating the twiddled data by using a symmetric rotate factor, where the rotate factor is a·W4L2p+1, p=0, . . . , L/2?1, and a is a constant; performing a Fast Fourier (Fast Fourier Transform, FFT) transform of L/2 point on the pre-rotated data, where L is the length of the input data; post-rotating the data that has undergone the FFT transform by using a symmetric rotate factor, where the rotate factor is b·W4L2q+1, q=0, . . . , L/2?1, and b is a constant; and obtaining output data.

Abstract: A semiconductor device includes an inductor disposed on a surface of an intermetallic dielectric layer at a location below which no virtual interconnect members are present. Thus, parasitic capacitance is reduced or eliminated and the Q value of the inductor is high.