Abstract: A flexible mounting slider with anti-static structure includes a slider body, an anti-static structure and a lead layer. The slider body includes an ABS, a slider back surface opposite to the ABS and a trailing edge connected with the ABS and the slider back surface. The trailing edge forms a plurality of slider pads thereon. The anti-static structure is provided on the slider back surface, which includes an insulation plate formed on the slider back surface, an anti-static plate formed on the insulation plate and a grounding element. In the invention, the anti-static plate comprises an insulation layer and an anti-static layer. The grounding element is electrically contacting with the anti-static layer of the anti-static plate and the slider back surface simultaneously. The lead layer is sandwiched between the insulation plate and the insulation layer of the anti-static plate and electrically connected with the slider pads of the slider body.

Abstract: A method for manufacturing ROM memory devices. The method includes forming a trench isolation structure within a cell region of a semiconductor substrate. The cell region is an array region for ROM memory devices. The method includes forming a gate structure within the cell region and forming a sidewall spacer on the gate structure, which is configured to overlap a portion of the trench isolation structure within the cell region to separate a buried bit line region of the cell region from an adjacent cell region. The method applies a refractory metal layer overlying the gate structure including sidewall spacers and exposed portion of the trench isolation structure. A step of alloying the refractory metal layer to the gate structure and exposed portions of source/drain regions to form silicided regions overlying the gate structure and source/drain regions is included. The refractory metal layer is selectively removed from sidewall spacers and exposed portion of the trench isolation structure.