Abstract: A data processing method is disclosed, including: twiddling input data, so as to obtain twiddled data; pre-rotating the twiddled data by using a symmetric rotate factor, where the rotate factor is a·W4L2p+1, p=0, . . . , L/2?1, and a is a constant; performing a Fast Fourier (Fast Fourier Transform, FFT) transform of L/2 point on the pre-rotated data, where L is the length of the input data; post-rotating the data that has undergone the FFT transform by using a symmetric rotate factor, where the rotate factor is b·W4L2q+1, q=0, . . . , L/2?1, and b is a constant; and obtaining output data.

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are disclosed. The semiconductor device includes an inductor disposed on a surface of an intermetallic dielectric layer at a location below which no virtual interconnect members are present. Thus, parasitic capacitance is reduced or eliminated and the Q value of the inductor is high.

Abstract: A semiconductor device and method of fabricating the semiconductor device are provided. The semiconductor device includes a first substrate including a front-end device containing a transistor, a radio frequency (RF) device and a first interconnect structure, and a second substrate containing a cavity disposed at a location corresponding to a location of the RF device. The first substrate and the second substrate are bonded together such that the first surface of the first substrate is facing the cavity in the second substrate, and the cavity is over the RF device. Because of the cavity, the distance between the second substrate and the RF device is relatively large so that the second substrate has less impact on the performance of the RF device, thereby improving the performance of the semiconductor device.

Abstract: A sound signal processing method and apparatus are provided that relate to the audio signal processing field. The method in the present invention includes acquiring, by a mobile terminal, sound signals from a three-dimensional sound field, where at least three microphones are disposed on the mobile terminal and one microphone is configured to receive a sound signal in at least one direction; acquiring, according to the acquired sound signals, a direction of a sound source relative to the mobile terminal; and obtaining spatial audio signals according to the direction of the sound source relative to the mobile terminal and the acquired sound signals, where the spatial audio signals are used for simulating the three-dimensional sound field. The present invention is applicable to a process of collecting and processing signals in a three-dimensional sound field surrounding a terminal.

Abstract: A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.

Abstract: A method of forming a semiconductor device includes: providing a first substrate, forming at least one transistor on a first surface of the first substrate; forming a first dielectric cap layer covering the first surface of the first substrate; forming a first interconnect structure on the first dielectric cap layer; providing a carrier substrate; bonding the carrier substrate to the first substrate through the first dielectric cap layer; and from a second surface of the first substrate opposite to the first surface, thinning the first substrate to a second depth.

Abstract: An audio signal processing method and apparatus and a differential beamforming method and apparatus to resolve a problem that an existing audio signal processing system cannot process audio signals in multiple application scenarios at the same time. The method includes determining a super-directional differential beamforming weighting coefficient, acquiring an audio input signal and determining a current application scenario and an audio output signal, acquiring, a weighting coefficient corresponding to the current application scenario, performing super-directional differential beamforming processing on the audio input signal using the acquired weighting coefficient in order to obtain a super-directional differential beamforming signal in the current application scenario, and performing processing on the formed signal to obtain a final audio signal required by the current application scenario.

Abstract: A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.

Abstract: A sound signal processing method and apparatus are provided that relate to the audio signal processing field. The method in the present invention includes acquiring, by a mobile terminal, sound signals from a three-dimensional sound field, where at least three microphones are disposed on the mobile terminal and one microphone is configured to receive a sound signal in at least one direction; acquiring, according to the acquired sound signals, a direction of a sound source relative to the mobile terminal; and obtaining spatial audio signals according to the direction of the sound source relative to the mobile terminal and the acquired sound signals, where the spatial audio signals are used for simulating the three-dimensional sound field. The present invention is applicable to a process of collecting and processing signals in a three-dimensional sound field surrounding a terminal.

Abstract: A semiconductor device and method of fabricating the semiconductor device are provided. The semiconductor device includes a first substrate including a front-end device containing a transistor, a radio frequency (RF) device and a first interconnect structure, and a second substrate containing a cavity disposed at a location corresponding to a location of the RF device. The first substrate and the second substrate are bonded together such that the first surface of the first substrate is facing the cavity in the second substrate, and the cavity is over the RF device. Because of the cavity, the distance between the second substrate and the RF device is relatively large so that the second substrate has less impact on the performance of the RF device, thereby improving the performance of the semiconductor device.

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are disclosed. The semiconductor device includes an inductor disposed on a surface of an intermetallic dielectric layer at a location below which no virtual interconnect members are present. Thus, parasitic capacitance is reduced or eliminated and the Q value of the inductor is high.

Abstract: A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.

Abstract: An audio information processing method and apparatus are provided. The method includes determining a first camera, acquiring first audio information collected by the first audio collecting unit, acquiring second audio information collected by the second audio collecting unit, processing the first audio information and the second audio information to obtain third audio information, where for the third audio information, a gain of a sound signal coming from a shooting direction of the first camera is a first gain and a gain of a sound signal coming from an opposite direction of the shooting direction is a second gain, and outputting the third audio information. When the method or the apparatus of the present application is adopted, in synchronously output audio information, volume of a target sound source in a final video image is higher than volume of noise or an interfering sound source outside the video image.

Abstract: A transistor device includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a gate structure disposed on the first surface and configured to form a channel region, and source and drain regions disposed on opposite sides of the channel region. The device also includes a source terminal and a drain terminal disposed on the second surface. The source and drain terminals are connected to the respective source and drain regions. The transistor device further include a body terminal disposed. on the second. surface and configured to connect the highest or lowest voltage supply to the semiconductor substrate.

Abstract: A coding method, a decoding method, a coding-decoding (codec) method, a codec system and relevant apparatuses are disclosed. The coding method includes: obtaining an amplitude vector and a length vector corresponding to a vector to be coded; sorting elements of the amplitude vector and elements of the length vector; and obtaining a position index value according to the sorted amplitude vector and the sorted length vector. A decoding method, a codec system, and relevant apparatuses are also provided.

Abstract: A data processing method is disclosed, including: twiddling input data, so as to obtain twiddled data; pre-rotating the twiddled data by using a symmetric rotate factor, where the rotate factor is a·W4L2p+1, p=0, . . . , L/2?1, and ? is a constant; performing a Fast Fourier (Fast Fourier Transform, FFT) transform of L/2 point on the pre-rotated data, where L is the length of the input data; post-rotating the data that has undergone the FFT transform by using a symmetric rotate factor, where the rotate factor is b·W4L2q+1, q=0, . . . , L/2?1, and b is a constant; and obtaining output data.

Abstract: The present invention discloses a signal processing method and a data processing method and apparatus. A time-domain to frequency-domain signal processing method includes: pre-processing time-domain data; pre-rotating the pre-processed data by using a rotation factor a·WNn+0.5; performing a discrete Fourier transform (DFT) of N/4 points on the pre-rotated data; and post-rotating the data transformed by the DFT by using a rotation factor b·WNk+0.5 to obtain frequency-domain data. A frequency-domain to time-domain signal processing method includes: twiddling frequency-domain data; pre-rotating the twiddled data by using a rotation factor c·WNk+0.5; performing a DFT of N/4 points on the pre-rotated data; and post-rotating the data transformed by the DFT by using a rotation factor d·WNn+0.5; and post-processing the post-rotated data to obtain time-domain data. The present invention increases the efficiency of signal processing.

Abstract: A method and an apparatus for generating a lattice vector quantizer codebook are disclosed. The method includes: storing an eigenvector set that includes amplitude vectors and/or length vectors, where the amplitude vectors and/or length vectors are different from each other and correspond to a root leader of a lattice vector quantizer; storing storage addresses of the amplitude vectors and length vectors, where the amplitude vectors and length vectors correspond to the root leader and are in the eigenvector set; and generating a lattice vector quantizer codebook according to the eigenvector set and the storage addresses.

Abstract: A method and an apparatus for generating a lattice vector quantizer codebook are disclosed. The method includes: storing an eigenvector set that includes amplitude vectors and/or length vectors, where the amplitude vectors and/or length vectors are different from each other and correspond to a root leader of a lattice vector quantizer; storing storage addresses of the amplitude vectors and length vectors, where the amplitude vectors and length vectors correspond to the root leader and are in the eigenvector set; and generating a lattice vector quantizer codebook according to the eigenvector set and the storage addresses.

Abstract: The present invention discloses a signal processing method and a data processing method and apparatus. A time-domain to frequency-domain signal processing method includes: pre-processing time-domain data; pre-rotating the pre-processed data by using a rotation factor a·WNn+0.5; performing a discrete Fourier transform (DFT) of N/4 points on the pre-rotated data; and post-rotating the data transformed by the DFT by using a rotation factor b·WNk+0.5 to obtain frequency-domain data. A frequency-domain to time-domain signal processing method includes: twiddling frequency-domain data; pre-rotating the twiddled data by using a rotation factor c·WNk+0.5; performing a DFT of N/4 points on the pre-rotated data; and post-rotating the data transformed by the DFT by using a rotation factor d·WNn+0.5; and post-processing the post-rotated data to obtain time-domain data. The present invention increases the efficiency of signal processing.