Abstract: Provided is a group III nitride laminate for improving device characteristics, including: an underlying substrate; a first layer that is formed on the underlying substrate and is made of aluminum nitride; and a second layer that is formed on the first layer and is made of gallium nitride, wherein the first layer has a thickness of more than 100 nm and 1 ?m or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 seconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 seconds or less.

Abstract: There is provided a semiconductor laminate, comprising: a substrate; and a p-type layer provided above the substrate and comprising a group III nitride containing Mg, wherein C concentration in the p-type layer is less than 5 × 1015 cm-3, O concentration in the p-type layer is less than 5 × 1015 cm-3, Si concentration in the p-type layer is less than 1×1015 cm-3, and F concentration in the p-type layer is 1×1014 cm-3 or more.

Abstract: A group III-nitride laminated substrate includes a sapphire substrate, a first layer that is formed on the sapphire substrate and is made of aluminum nitride, a second layer that is formed on the first layer and serves as an n-type layer made of gallium nitride and doped with an n-type dopant, a third layer that is formed on the second layer and serves as a light-emitting layer made of a group III-nitride, and a fourth layer that is formed on the third layer and serves as a p-type layer made of a group III-nitride and doped with a p-type dopant. The second layer has a thickness of 7 ?m or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.

Abstract: A nitride semiconductor laminate includes: a substrate comprising a group III nitride semiconductor and including a surface and a reverse surface, the surface being formed from a nitrogen-polar surface, the reverse surface being formed from a group III element-polar surface and being provided on the reverse side from the surface; a protective layer provided at least on the reverse surface side of the substrate and having higher heat resistance than the reverse surface of the substrate; and a semiconductor layer provided on the surface side of the substrate and comprising a group III nitride semiconductor. The concentration of O in the semiconductor layer is lower than 1×1017 at/cm3.

Abstract: There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the substrate; (b) applying annealing to the first layer in an inert gas atmosphere; and (c) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum on the first layer by a vapor phase growth after performing (b), and constituting the nitride semiconductor layer by the first layer and the second layer.

Abstract: There is provided an aluminum nitride laminate member including: a sapphire substrate having a base surface on which bumps are distributed periodically, each bump having a height of smaller than or equal to 500 nm; and an aluminum nitride layer provided on the base surface and having a surface on which protrusions are formed above the apices of the bumps.

Abstract: There is provided an aluminum nitride laminate member including: a sapphire substrate having a base surface on which bumps are distributed periodically, each bump having a height of smaller than or equal to 500 nm; and an aluminum nitride layer grown on the base surface and having a flat surface, there being substantially no voids in the aluminum nitride layer.

Abstract: An object of the present disclosure is to provide a technique capable of attaining an AlN template which has less strain and is suitable for producing the ultraviolet LED. Provided is a nitride semiconductor laminate structure, including at least a sapphire substrate, a first AlN layer formed on a principal surface of the sapphire substrate, and a second AlN layer formed on the first AlN layer, wherein an absolute value of a strain amount ?2 of the second AlN layer in the a-axis direction is smaller than an absolute value of a strain amount ?1 of the first AlN layer in the a-axis direction.

Abstract: An object is to improve quality of a nitride crystal. A crystal represented by a composition formula InxAlyGa1?x?yN (satisfying 0?x?1, 0?y?1, and 0?x+y?1), wherein the concentration of carbon in the crystal is less than 1×1015 cm?3, and the concentration of an electron trap E3 that exits in an energy range from 0.5 eV to 0.65 eV from a lower end of a conduction band in the crystal is less than 1×1014 cm?3.

Abstract: An object of the present invention is to improve quality of a nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal in which a composition formula is represented by InxAlyGa1-x-yN (satisfying 0?x?1, 0?y?1, 0?x+y?1), and the concentration of B in the crystal is less than 1×1015 at/cm3, and each of the concentrations of O and C in the crystal is less than 1×1015 at/cm3 in a region of 60% or more of a main surface.

Abstract: Provided is a group III nitride laminate for improving device characteristics, including: an underlying substrate; a first layer that is formed on the underlying substrate and is made of aluminum nitride; and a second layer that is formed on the first layer and is made of gallium nitride, wherein the first layer has a thickness of more than 100 nm and 1 ?m or less, a full width at half maximum of (0002) diffraction determined through X-ray rocking curve analysis is 250 seconds or less, and a full width at half maximum of (10-12) diffraction determined through X-ray rocking curve analysis is 500 seconds or less.

Abstract: There is provided a method for manufacturing a nitride semiconductor template constituted by forming a nitride semiconductor layer on a substrate, comprising: (a) preparing a pattern-substrate as the substrate, with a concavo-convex pattern formed on a front surface of the pattern-substrate, (b) forming a first layer by epitaxially growing a nitride semiconductor containing aluminum on the concavo-convex pattern of the pattern-substrate, in a thickness of not flattening a front surface; (c) applying annealing to the first layer; and (d) forming a second layer by epitaxially growing a nitride semiconductor containing aluminum so as to overlap on the first layer after performing (c), and in a thickness of flattening a front surface, and constituting the nitride semiconductor layer by the first layer and the second layer.

Abstract: A group III-nitride laminated substrate includes a sapphire substrate, a first layer that is formed on the sapphire substrate and is made of aluminum nitride, a second layer that is formed on the first layer and serves as an n-type layer made of gallium nitride and doped with an n-type dopant, a third layer that is formed on the second layer and serves as a light-emitting layer made of a group III-nitride, and a fourth layer that is formed on the third layer and serves as a p-type layer made of a group III-nitride and doped with a p-type dopant. The second layer has a thickness of 7 ?m or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.

Abstract: Provided is a technology capable of improving the quality of a GaN layer that is formed on an underlying substrate. A group III-nitride laminated substrate includes an underlying substrate, a first layer that is formed on the underlying substrate and is made of aluminum nitride, and a second layer that is formed on the first layer and is made of gallium nitride. The second layer has a thickness of 10 ?m or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.

Abstract: An object of the present disclosure is to provide a technique capable of attaining an AlN template which has less strain and is suitable for producing the ultraviolet LED. Provided is a nitride semiconductor laminate structure, including at least a sapphire substrate, a first AlN layer formed on a principal surface of the sapphire substrate, and a second AlN layer formed on the first AlN layer, wherein an absolute value of a strain amount ?2 of the second AlN layer in the a-axis direction is smaller than an absolute value of a strain amount ?1 of the first AlN layer in the a-axis direction.

Abstract: An object of the present invention is to improve quality of a group-III nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal represented by the composition formula of InxAlyGa1-x-yN (satisfying 0?x?1, 0?y?1, 0?x+y?1), with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.

Abstract: Provided is a semi-insulating crystal represented by a composition formula InxAlyGa1-x-yN (satisfying 0?x?1, 0?y?1, 0?x+y?1), wherein each concentration of Si, B, and Fe in the crystal is less than 1×1015 at/cm3, electric resistivity under a temperature condition of 20° C. or more and 200° C. or less is 1×106 ?cm or more.

Abstract: To provide a technique of increasing a radius of curvature of (0001) plane, and narrowing an off-angle distribution, there is provided a nitride semiconductor substrate containing a group III nitride semiconductor crystal and having a main surface in which a nearest low index crystal plane is (0001) plane, wherein (0001) plane in one of a direction along <1-100> axis and a direction along <11-20> axis orthogonal to the <1-100> axis, is curved in a concave spherical shape with respect to the main surface, and a radius of curvature of the (0001) plane in one of the direction along the <1-100> axis and the direction along the <11-20> axis orthogonal to the <1-100> axis is different from a radius of curvature of at least a part of the (0001) plane in the other direction.

Abstract: To provide a new GaN laminate obtained by growing a GaN layer on a GaN substrate by HVPE, including: a GaN substrate containing GaN single crystal and having a low index crystal plane as c-plane closest to a main surface; and a GaN layer epitaxially grown on the main surface of the GaN substrate, and having a thickness of 10 nm or more, wherein a surface of the GaN layer has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a predetermined direction and a terrace are alternately arranged.

Abstract: There is provided an aluminum nitride laminate member including: a sapphire substrate having a base surface on which bumps are distributed periodically, each bump having a height of smaller than or equal to 500 nm; and an aluminum nitride layer grown on the base surface and having a flat surface, there being substantially no voids in the aluminum nitride layer.