Abstract: There is provided a substrate processing apparatus, comprising: a substrate placing table which is provided to at least one of the temperature elevating part and the temperature lowering part formed in a container, and which causes heat-transfer to occur with the substrate placed on a placing surface; and a temperature control part which controls a temperature of the substrate placing table, wherein the temperature control part is configured to: control the temperature of the substrate placing table so that the temperature of the substrate to be loaded into the processing part is elevated to a predetermined temperature, before the substrate is placed on the substrate placing table, when the substrate placing table is provided to the temperature elevating part; and control the temperature of the substrate placing table so that the temperature of the processed substrate unloaded from the processing part is lowered to a predetermined temperature, before the substrate is placed on the substrate placing table, whe

Abstract: A nitride semiconductor template includes a heterogeneous substrate, a first nitride semiconductor layer that is formed on one surface of the heterogeneous substrate, includes a nitride semiconductor and has an in-plane thickness variation of not more than 4.0%, and a second nitride semiconductor layer that is formed on an annular region including an outer periphery of an other surface of the heterogeneous substrate, includes the nitride semiconductor and has a thickness of not less than 1 ?m.

Abstract: There is provided a semiconductor manufacturing device that supplies a source gas to a substrate installed in a reaction furnace and performs film formation processing to the substrate, including: a storage vessel which is disposed in the reaction furnace and which stores a metal raw material as a base of the source gas; an auxiliary vessel which is disposed at an upper side of the storage vessel in the reaction furnace and which is a bottomed vessel having an inlet port for the metal raw material; a connection pipe through which an outlet port for the metal raw material formed on the auxiliary vessel and an inside of the storage vessel are communicated with each other; a sealing plug for sealing the outlet port so as to be opened and closed freely; and heater units that heat an inside of the reaction furnace to a predetermined temperature so as to melt the metal raw material in the auxiliary vessel and the metal raw material in the storage vessel, and to a predetermined temperature required for film formatio

Abstract: There is provided a method for manufacturing a nitride semiconductor template, including the steps of: growing and forming a buffer layer in a thickness of not more than a peak width of a projection and in a thickness of not less than 10 nm and not more than 330 nm on a sapphire substrate formed by arranging conical or pyramidal projections on its surface in a lattice pattern; and growing and forming a nitride semiconductor layer on the buffer layer.

Abstract: There is provided a semiconductor manufacturing device, including: a processing vessel; a partition wall that divides at least a part of a space in the processing vessel into a growth section and a cleaning section; a substrate holding member disposed in the growth section; a source gas supply system that supplies a source gas into the growth section; a cleaning gas supply system that supplies a cleaning gas into the cleaning section; and a heater that heats the growth section and the cleaning section.

Abstract: A nitride semiconductor free-standing substrate includes a diameter of not less than 40 mm, a thickness of not less than 100 ?m, a dislocation density of not more than 5×106/cm2, an impurity concentration of not more than 4×1019/cm3, and a nanoindentation hardness of not less than 19.0 GPa at a maximum load in a range of not less than 1 mN and not more than 50 mN.

Abstract: There is provided a technique of suppressing unintended substrate processing from being performed after predetermined substrate processing is ended, including a substrate support section that supports a substrate in a processing chamber; a processing gas supply section that supplies a processing gas into the processing chamber; and a moving mechanism that moves the substrate support section in the processing chamber, between a first position to which the processing gas supplied from the processing gas supply section is blown, and a second position to which the processing gas supplied from the processing gas supply section is not blown.

Abstract: There is provided a semiconductor manufacturing device that supplies a source gas to a substrate installed in a reaction furnace and performs film formation processing to the substrate, including: a storage vessel which is disposed in the reaction furnace and which stores a metal raw material as a base of the source gas; an auxiliary vessel which is disposed at an upper side of the storage vessel in the reaction furnace and which is a bottomed vessel having an inlet port for the metal raw material; a connection pipe through which an outlet port for the metal raw material formed on the auxiliary vessel and an inside of the storage vessel are communicated with each other; a sealing plug for sealing the outlet port so as to be opened and closed freely; and heater units that heat an inside of the reaction furnace to a predetermined temperature so as to melt the metal raw material in the auxiliary vessel and the metal raw material in the storage vessel, and to a predetermined temperature required for film formatio

Abstract: There is provided a method for manufacturing a nitride semiconductor template, including the steps of: growing and forming a buffer layer in a thickness of not more than a peak width of a projection and in a thickness of not less than 10 nm and not more than 330 nm on a sapphire substrate formed by arranging conical or pyramidal projections on its surface in a lattice pattern; and growing and forming a nitride semiconductor layer on the buffer layer.

Abstract: There is provided a method for manufacturing a nitride semiconductor template, including the steps of: growing and forming a buffer layer to be thicker than a peak width of a projection and in a thickness of not less than 11 nm and not more than 400 nm on a sapphire substrate formed by arranging conical or pyramidal projections on its surface in a lattice pattern; and growing and forming a nitride semiconductor layer on the buffer layer.

Abstract: Provided is a nitride semiconductor wafer in which, above a nitride semiconductor template having a nitride semiconductor layer as a top layer thereof, a light emitting layer having a multiple quantum well structure that is formed by a regrown nitride semiconductor and a p-type nitride semiconductor layer are stacked. Here, when the light emitting layer having a multiple quantum well structure includes a plurality of well layers and one of the well layers that is the closest to the p-type nitride semiconductor layer is referred to as a top well layer, a distance t from a regrowth interface of the nitride semiconductor layer of the nitride semiconductor template to the top well layer is 1 ?m or less, and the top well layer has an oxygen concentration of 5.0×1016 cm?3 or less.

Abstract: A nitride semiconductor template includes a substrate, an AlN layer that is formed on the substrate and that includes Cl, and a nitride semiconductor layer formed on the AlN layer. In the AlN layer, a concentration of the Cl in a region on a side of the substrate is higher than that in a region on a side of the nitride semiconductor layer. Also, a light-emitting element includes the nitride semiconductor template, and a light-emitting layer formed on the nitride semiconductor template.

Abstract: Techniques are provided to improve the quality of the thin films deposited on substrates. A substrate transporting mechanism is configured to transport a plurality of substrates arranged in a line along a transport path extending in a first container from an entrance to an exit, and to load and unload substrates into and out of a second container in order. The driving units to drive the substrate transporting mechanism are configured to be detachable from the substrate transporting mechanism provided in the first container and are respectively provided in a substrate loading chamber and a substrate unloading chamber.

Abstract: A wafer inspection apparatus including a light emitter configured to emit light onto a to-be-inspected surface of a wafer, an imaging unit configured to obtain an image formed by the light emitted from the light emitter and reflected by the to-be-inspected surface, a moving unit configured to move a to-be-inspected position on the to-be-inspected surface by controlling a position of one of the wafer and the light emitter, and an inspecting unit configured to inspect the to-be-inspected surface by detecting a scatter image formed by the light that is emitted from the light emitter and scattered by a defect of the to-be-inspected surface, where the scatter image is formed outside an outline of the image formed by the light emitted from the light emitter.

Abstract: There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.

Abstract: A metal chloride gas generator includes a reactor including a receiving section for receiving a metal on an upstream side and a growing section in which a growth substrate is placed on a downstream side, a raw material section heater and a growing section heater each of which heats an inside of the reactor, an upstream end comprising a gas inlet, and a gas inlet pipe arranged to extend from the upstream end via the receiving section to the growing section, for introducing a chloride gas from the upstream end to supply the chloride gas to the receiving section and supplying a metal chloride gas produced by a reaction between the chloride gas and the metal in the receiving section to the growing section. The gas inlet pipe includes a suppressing section for suppressing an optical waveguiding phenomenon which waveguides a radiant heat from the growing section heater or the growing section.

Abstract: A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.

Abstract: A nitride semiconductor template includes a substrate, and a chlorine-containing nitride semiconductor layer. The chlorine-containing nitride semiconductor layer contains an iron concentration of not higher than 1×1017 cm?3.

Abstract: The invention provides a method for manufacturing a nitride semiconductor substrate capable of reducing a cleavage during slicing of the nitride semiconductor single crystal and capable of improving a yield rate of the nitride semiconductor substrate. The method includes growing a nitride semiconductor single crystal on a seed crystal substrate by vapor phase epitaxy; grinding an outer peripheral surface the grown nitride semiconductor single crystal; and slicing the nitride semiconductor single crystal with its outer peripheral surface ground. A grinding amount of the outer peripheral surface of the nitride semiconductor single crystal in the step of grinding is 1.5 mm or more.

Abstract: There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.