Abstract: According to one embodiment, a display device includes a substrate unit, a thin film transistor, a pixel electrode and a display layer. The substrate unit includes a substrate, a first insulating layer provided on the substrate, and a second insulating layer provided on the first insulating layer. The thin film transistor is provided on the substrate unit and includes a gate electrode provided on the second insulating layer, a semiconductor layer of an oxide separated from the gate electrode, a gate insulation layer provided between the gate electrode and the semiconductor layer, a first conductive portion, a second conductive portion, and a third insulating layer. The pixel electrode is connected to one selected from the first and second conductive portions. The display layer is configured to have a light emission or a change of optical characteristic occurring according to a charge supplied to the pixel electrode.

Abstract: According to one embodiment, a method for manufacturing a display element is disclosed. The method can include forming a peeling layer, forming a resin layer, forming a barrier layer, forming an interconnect layer, forming a display layer, and removing. The peeling layer is formed on a major surface of a base body. The major surface has first, second, and third regions. The peeling layer includes first, second, and third peeling portions. The resin layer is formed on the peeling layer. The resin layer includes first and second resin portions. The barrier layer is formed on the first, second, and third peeling portions. The interconnect layer is formed on the barrier layer. The display layer is formed on the interconnect layer. The first peeling portion is removed from the first resin portion and the second peeling portion is removed from the second resin portion.

Abstract: According to one embodiment, an interference filter includes a base body, a lower semi-transmissive layer, and an upper semi-transmissive layer. The base body includes a major surface. The lower semi-transmissive layer is provided on the major surface. The upper semi-transmissive layer is provided on the lower semi-transmissive layer. The base body, the lower and upper semi-transmissive layers form a first region to selectively transmit blue light, a second region to selectively transmit green light, and a third region to selectively transmit red light, arranged in a plane parallel to the major surface. A distance between the lower semi-transmissive layer and the upper semi-transmissive layer in the second region is shorter than a distance between the lower semi-transmissive layer and the upper semi-transmissive layer in the first region, and shorter than a distance between the lower semi-transmissive layer and the upper semi-transmissive layer in the third region.

Abstract: According to one embodiment, a display device includes a first substrate, a second substrate, a first electrode, a second electrode, a partition electrode, a luminescent layer and a voltage source. The luminescent layer includes a luminescent material emitting light rays due to an electrochemical oxidation or reduction reaction thereof. The voltage source is configured to generate a driving voltage between the first and second electrodes so as to apply first and second potentials, wherein the first and second potentials are maintained at one and opposite polarities in respect to the reference potential during a predetermined segment period respectively and are periodically reversed, each of the first and second potentials is changed first to second absolute levels during the predetermined segment period, the second absolute potential is determined depending on the gradation of input image data, and the first absolute potential is higher than the second absolute potential.

Abstract: According to one embodiment, a liquid crystal optical device includes first and second substrate units and a liquid crystal layer. The first substrate unit includes a first substrate having a first major surface, and a first electrode extending along a first direction. The second substrate unit includes a second substrate and a first opposing electrode. The liquid crystal layer is provided between the first substrate unit and the second substrate unit and includes a first portion provided on a side of the first substrate unit and a second portion provided on a side of the second substrate unit. The first portion has a vertical alignment. The second portion has a horizontal alignment. A long axis of liquid crystal molecules in the second portion aligns along a second direction perpendicular to the first direction.

Abstract: According to one embodiment, a thin film transistor includes: a substrate; a semiconductor layer; first and second insulating films; and gate, source and drain electrodes. The semiconductor layer is provided on the substrate. The semiconductor layer is made of an oxide having indium. The semiconductor layer has first and second regions and other region. The first insulating film covers a top face of the other region. The second insulating film covers at least a pair of side surfaces of the semiconductor layer. The second insulating film is formed under a condition different from that for the first insulating film. The gate electrode is provided on the first and second insulating films or below the semiconductor layer. The source and drain electrodes are provided on the first and second regions, respectively. The drain and source electrodes sandwich the pair of the side surfaces of the semiconductor layer.

Abstract: According to one embodiment, a display device includes a thin film transistor. The thin film transistor includes a gate insulating film, a semiconductor layer, a gate electrode, first and second channel protection films, first and second conductive layers, and a passivation film. The semiconductor layer is provided on a major surface of the gate insulating film. The semiconductor layer includes first to seventh portions. The gate insulating film is disposed between the semiconductor layer and the gate electrode. The first channel protection film covers the third portion. The second channel protection film covers the fifth and fourth portions, and an upper surface of the first channel protection film. The first conductive layer covers the sixth portion. The second conductive layer covers the seventh portion. The passivation film covers the first and second portions, the first and second conductive layers, and the second channel protection film.

Abstract: According to an embodiment, a method for manufacturing a display device, includes steps of disposing a cathode of a first substrate unit to face an anode of a second substrate unit with an intermediate layer interposed, and bonding the cathode to the anode with the intermediate layer interposed. The first substrate unit includes a first substrate, a thin film transistor provided on the first substrate, and the cathode connected to the thin film transistor. The thin film transistor is an n-channel thin film transistor. The second substrate unit includes a second substrate and the anode provided on the second substrate.

Abstract: According to one embodiment, a display device includes a first insulating layer, a second insulating layer, a pixel electrode, a light emitting layer, an opposite electrode and a pixel circuit. The second insulating layer is provided on the first insulating layer. The pixel electrode is provided on the second insulating layer and light-transmissive. The light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the light emitting layer. The circuit is provided between the first insulating layer and the second insulating layer, includes an interconnect supplied with a drive current, and is configured to supply the drive current to the pixel electrode. The circuit is connected to the pixel electrode. The interconnect has a first region overlaying the pixel electrode when projected onto a plane parallel to the first insulating layer. The interconnect has an opening in the first region.

Abstract: A backlight includes a case having plural apertures in a main face thereof and a light source disposed in the case. A total area of the plural apertures is not less than 8% and not more than 15% of an area of the main face.

Abstract: According to one embodiment, a liquid crystal/polymer complex includes a liquid crystal material, a polymer, and a chiral agent. The liquid crystal material exhibits blue phase and contains liquid crystal molecules that are spirally arranged to form liquid crystal molecular cylinders having a spiral arrangement. The polymer maintains the arrangement and has a dendrimer-type structure including a dendrimer unit and a polymerizable unit bonded to an end of the dendrimer unit. The dendrimer unit contains a central atom and at least two branched structures bonded to the central atom and has a generation of two or more. The polymerizable unit contains a polymerizable group which can bond to a polymerizable group.

Abstract: According to one embodiment, a display device includes a substrate, a thin film transistor, a passivation film, a hydrogen barrier film, a pixel electrode, an organic light emitting layer, an opposite electrode, and a sealing film. The thin film transistor is provided on a major surface of the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The passivation film is provided on the thin film transistor. The hydrogen barrier film is provided on the passivation film. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The sealing film is provided on the hydrogen barrier film and the opposite electrode.

Abstract: According to one embodiment, a display device includes a substrate, a thin film transistor, a pixel electrode, an organic light emitting layer, a common electrode, and a sealing unit. The thin film transistor is provided on the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The common electrode is provided on the organic light emitting layer. The sealing unit is provided on the common electrode. The sealing unit includes a first sealing film and a second sealing film. A refractive index of the second sealing film is different from a refractive index of the first sealing film.

Abstract: According to one embodiment, a method is disclosed for manufacturing a display device. A film material layer is formed on a support substrate. A first heating process for the film material layer at a first temperature to form a film layer and a second heating process for a second region surrounding a first region at a second temperature higher than the first temperature are performed. The first region is provided in a central part of the film layer. A display layer is formed in the first region and a peripheral circuit section is formed at least in a part of the second region. A third heating process is performed for at least a part of the film layer at a third temperature higher than the second temperature. In addition, the film layer is peeled off from the support substrate.

Abstract: According to one embodiment, a display panel includes a substrate, a switching element, a pixel electrode, an organic light emitting layer, an opposite electrode, a detecting electrode, and an insulating layer. The substrate has a major surface. The switching element is provided on the major surface. The switching element includes a semiconductor layer. The pixel electrode is provided on the major surface. The pixel electrode is electrically connected to the switching element. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The detecting electrode is provided between the substrate and at least a part of the pixel electrode. The detecting electrode includes at least one element included in the semiconductor layer. The insulating layer is provided between the pixel electrode and the detecting electrode.

Abstract: According to one embodiment, a display device includes a light transmissive substrate, a light transmissive pixel electrode, a switching element, an organic light emitting layer, a light transmissive opposite electrode, a conductive light absorption layer and a conductive film. The light transmissive pixel electrode is provided on the substrate. The switching element is provided on the substrate and electrically connected to the pixel electrode. The organic light emitting layer is provided on the pixel electrode. The light transmissive opposite electrode is provided on the organic light emitting layer. The conductive light absorption layer is provided on the opposite electrode. The conductive film is provided on the light absorption layer.

Abstract: A backlight includes a case having plural apertures in a main face thereof and a light source disposed in the case. A total area of the plural apertures is not less than 8% and not more than 15% of an area of the main face.

Abstract: According to one embodiment, an optical device includes an optically variable layer and first and second electrodes. The optically variable layer includes a material having dielectric anisotropy and a solvatochromic dye. The first and second electrodes are configured to apply a voltage to the optically variable layer. According to another embodiment, a display includes an optical device and a driving circuit. The optical device includes an optically variable layer and first and second electrodes. The optically variable layer includes a material having dielectric anisotropy and a solvatochromic dye. The first and second electrodes are configured to driving circuit is configured to put a drive voltage across the first and second electrodes.

Abstract: According to one embodiment, a method is disclosed for manufacturing a display device. A film material layer is formed on a support substrate. A first heating process for the film material layer at a first temperature to form a film layer and a second heating process for a second region surrounding a first region at a second temperature higher than the first temperature are performed. The first region is provided in a central part of the film layer. A display layer is formed in the first region and a peripheral circuit section is formed at least in a part of the second region. A third heating process is performed for at least a part of the film layer at a third temperature higher than the second temperature. In addition, the film layer is peeled off from the support substrate.

Abstract: According to one embodiment, an apparatus includes a support substrate, first electrodes, second electrodes, a counter substrate, and a liquid crystal layer. The first and second electrodes are provided on a surface of the support substrate. The first and second electrodes are alternately arranged. A counter substrate opposes the surface. The liquid crystal layer is held between the support substrate and the counter substrate. 0.7?D/(L+S)?2 is satisfied. L is an average width of at least two of the first electrodes and at least two of the second electrodes. S is an average distance between at least two pairs of adjacent ones of the first and second electrodes. D is a distance between the support substrate and the counter substrate.