Abstract: The present document describes a lithographic patterning method for creating features on a surface of a substrate. The patterning method includes the steps of applying a resist material to the substrate surface for providing a resist material layer, selectively exposing, dependent on a location and based on patterning data, the resist material layer to a surface treatment step for chemically modifying the resist material of the resist material layer, and developing, based on the chemical modification of the resist material, the resist material layer such as to selectively remove the resist material. In particular, prior to the step of developing, the method comprises a step of scanning at least a part of the surface using an acoustic scanning probe microscopy method for determining a local contact stiffness of the substrate surface at a plurality of locations, for measuring one or more critical dimensions of the features to be formed on the surface.

Abstract: The surface of the atomic force microscopy (AFM) cantilever is defined by a main cantilever body and an island. The island is partly separated from the main body by a separating space between facing edges of the main body and the island. At least one bridge connects the island to the main body, along a line around which the island is able to rotate through torsion of the at least one bridge. The island has a probe tip located on the island at a position offset from said line and a reflection area. In an AFM a light source directs light to the reflection area and a light spot position detector detects a displacement of a light spot formed from light reflected by the reflection area, for measuring an effect of forces exerted on the probe tip.

Abstract: A distance sensor (1) for estimating a distance to a surface (OS) of an object (O), the distance sensor including a micro electric mechanical system (MEMS) (5), a detection means (30) and a processing device (40). The MEMS comprises a MEMS device (10) having a surface (12), denoted as MEMS sensor surface, to be arranged opposite the surface (OS) of said object (O) and a MEMS driver (20) for generating an ac driving signal to cause the MEMS sensor surface (12) to vibrate. The detection means (30) is to determine a value of a property of a dynamic behavior of the MEMS (5) and the processing device (40) is to estimate an average distance (h) as a measured distance (D2) between the MEMS sensor surface (12) and the surface (Os) of the object (O) based on the determined value for said property.

Abstract: A method and system for performing subsurface atomic force microscopy measurements, the system comprising: a signal source for generating an drive signal; a transducer configured to receive the drive signal for converting the drive signal into vibrational waves and coupling said vibrational waves into a stack comprising a sample for interaction with subsurface features within said sample; cantilever tip for contacting the sample for measuring surface displacement resulting from the vibrational waves to determine subsurface features; wherein the system includes a measurement device for measuring a measurement signal returning from the transducer during and/or in between the subsurface atomic force microscopy measurements.

Abstract: A method for measuring damage (D) of a substrate (1) caused by an electron beam (2). The method comprises using an atomic force microscope (AFM) to provide a measurement (S2) of mechanical and/or chemical material properties (P2) of the substrate (1) at an exposure area (1a) of the electron beam (2). The method further comprises calculating a damage parameter (Sd) indicative for the damage (D) based on the measurement (S2) of the material properties (P2) at the exposure area (1a).

Abstract: A method of performing atomic force microscopy (AFM) measurements, uses an ultrasound transducer to transmit modulated ultrasound waves with a frequency above one GHz from the ultrasound transducer to a top surface of a sample through the sample from the bottom surface of the sample. Effects of ultrasound wave scattering are detected from vibrations of an AFM cantilever at the top surface of the sample. Before the start of the measurements, a drop of a liquid is placed on a top surface of the ultrasound transducer. The sample is placed on the top surface of the ultrasound transducer, whereby the sample presses the liquid in the drop into a layer of the liquid between the top surface of the ultrasound transducer and a bottom surface of the sample. The AFM measurements are started after a thickness of the layer of the liquid has stabilized.

Abstract: Atomic force microscopy system comprising an atomic force microscopy device and a substrate carrier having a carrier surface carrying a substrate. The substrate has a substrate main surface and a substrate scanning surface opposite the substrate main surface. The atomic force microscopy device comprises a scan head including a probe. The probe comprises a cantilever and a probe tip arranged on the cantilever. The atomic force device further comprises an actuator cooperating with at least one of the scan head or the substrate carrier for moving the probe tip and the substrate carrier relative to each other in one or more directions parallel to the carrier surface for scanning of the substrate scanning surface with the probe tip. A signal application actuator applies, during said scanning, an acoustic input signal to the substrate, said acoustic input signal generating a first displacement field in a first displacement direction only.

Abstract: The present document relates to a method of detecting structures on or below the surface of a sample using a probe including a cantilever and a probe tip, the cantilever being characterized by one ore more normal modes of resonance including a fundamental resonance frequency, the method including: applying, using a transducer, a vibrational input signal to the sample; sensing, while the probe tip is in contact with the surface, an output signal indicative of motion of the probe tip due to vibrations at the surface induced by the vibrational input signal; wherein the vibrational input signal comprises at least a first signal component having a frequency within a range of 10 to 100 megahertz; and wherein the vibrational input signal is amplitude modulated using at least a second signal component having a modulation frequency below 5 megahertz. The present document further relates to a scanning probe microscopy method.

Abstract: Methods and systems for subsurface imaging of nanostructures buried inside a plate shaped substrate are provided. An ultrasonic generator at a side face of the substrate is used to couple ultrasound waves (W) into an interior of the substrate. The interior has or forms a waveguide for propagating the ultrasound waves (W) in a direction (X) along a length of the substrate transverse to the side face. The nanostructures are imaged using an AFM tip to measure an effect (E) at the top surface caused by direct or indirect interaction of the ultrasound waves (W) with the buried nanostructures.

Abstract: An atomic force microscopy device arranged for determining sub-surface structures in a sample comprises a scan head with a probe including a flexible carrier and a probe tip arranged on the flexible carrier. Therein an actuator applies an acoustic input signal to the probe and a tip position detector measures a motion of the probe tip relative to the scan head during scanning, and provides an output signal indicative of said motion, to be received and analyzed by a controller. At least an end portion of the probe tip tapers in a direction away from said flexible carrier towards an end of the probe tip. The end portion has a largest cross-sectional area Amax at a distance Dend from said end, the square root of the largest cross-sectional area Amax is at least 100 nm and the distance Dend is in the range of 0.2 to 2 the value of said square root.

Abstract: The present document relates to a anatomic force microscope comprising a probe comprising a probe tip configured to sense a sample disposed proximate to the probe tip, a detector to detect a deflection of the probe tip, an actuator coupled to the probe and configured to move the probe in a sense state with the sample at a predetermined force set point and a vibrator in communication with the sample to provide a vibration to the sample, the vibration comprising a modulation frequency, wherein the acoustic vibrator is configured to provide the vibration in a modulation period after an initial sense period without modulation and wherein the probe is moved during or after said modulation period to a successive sample position over said sample while moving the probe in a non-contact state.

Abstract: A method to perform sub-surface detection of nanostructures in a sample, uses an atomic force microscopy system that comprising a scan head having a probe with a cantilever and a probe tip arranged on the cantilever. The method comprises: moving the probe tip and the sample relative to each other in one or more directions parallel to the surface for scanning of the surface with the probe tip; and monitoring motion of the probe tip relative to the scan head with a tip position detector during said scanning for obtaining an output signal. During said scanning acoustic vibrations are induced in the probe tip by applying a least a first and a second acoustic input signal respectively comprising a first and a second signal component at mutually different frequencies above IGHz, differing by less than IGHz to the probe, and analyzing the output signal for mapping at least subsurface nanostructures below the surface of the sample.

Abstract: Method of determining an overlay error between device layers of a multilayer semiconductor device using an atomic force microscopy system, wherein the semiconductor device comprises a stack of device layers comprising a first patterned layer and a second patterned layer, and wherein the atomic force microscopy system comprises a probe tip, wherein the method comprises: moving the probe tip and the semiconductor device relative to each other for scanning of the surface; and monitoring motion of the probe tip with tip position detector during said scanning for obtaining an output signal; during said scanning, applying a first acoustic input signal to at least one of the probe or the semiconductor device; analyzing the output signal for mapping at least subsurface nanostructures below the surface of the semiconductor device; and determining the overlay error between the first patterned layer and the second patterned layer based on the analysis.

Abstract: The present document describes a device for measuring and/or modifying surface features and/or sub-surface features on or below a surface of a sample. The system comprises a sample carrier, one or more heads, and a support structure. The support structure comprises a reference surface for providing a positioning reference. The heads are separate from the sample carrier and the support structure, and the device further comprises a pick and place manipulator arranged for positioning the heads at respective working positions. The manipulator comprises a gripper and an actuator for moving the gripper, wherein the actuator is arranged for providing a motion in a direction transverse to the reference surface. The gripper is arranged for engaging and releasing the respective heads from the transverse motion. The document also describes a method of measuring and/or modifying surface features on a surface of a sample.

Abstract: Method and system for performing characterization of a sample using an atomic force microscopy system. An actuation signal is provided to a photo-thermal actuator which is configured to excite the probe by means of an optical excitation beam incident on the cantilever. The probe is configured to be bendable by means of the optical excitation beam impinging on it. The actuation signal is configured to include at least one modulation frequency. The probe tip motion is monitored for determining at least a subsurface characterization data.

Abstract: The present document relates to a method of determining an overlay or alignment error between a first and a second device layer of a multilayer semiconductor device (26) using an atomic force microscopy system (20). The system comprises a scan head (22) including a probe (28). The probe includes a cantilever and a probe tip (30). The method comprises moving the probe tip and the semiconductor device relative to each other for scanning of the surface of the semiconductor device with the probe tip, wherein the probe tip is intermittently or continuously in contact with the surface during scanning. During scanning a signal application actuator (70) applies an acoustic input signal to the substrate, and motion of the probe tip is monitored with a tip position detector for obtaining an output signal, to be analyzed for mapping subsurface structures in different device layers. The signal application actuator includes a shear wave actuator to apply a shear acoustic wave (90) in the substrate.

Abstract: A system for thermal nanolithography comprises a cantilever (13) with a nanoscale tip (14) in proximity to a substrate surface (22). A probe light beam (L1) is reflected off the cantilever (13) and the reflected beam (R1) is measured to determine an atomic force interaction (F) between the tip (14) and the substrate surface (22). The tip (14) is heated to cause a heat-induced change at a localized part (22a) of the substrate surface (22) in proximity to the tip (14) by a heat flow (H) from the tip (14) to said localized part (22a). As described herein, the tip (14) is heated by absorption (A2) of a second, heat-inducing light beam (L2) that is distinct from the probe light beam (L1), in particular having a distinct wavelength (?2) or other properties.

Abstract: A method of performing atomic force microscopy (AFM) measurements, uses an ultrasound transducer to transmit modulated ultrasound waves with a frequency above one GHz from the ultrasound transducer to a top surface of a sample through the sample from the bottom surface of the sample. Effects of ultrasound wave scattering are detected from vibrations of an AFM cantilever at the top surface of the sample. Before the start of the measurements a drop of a liquid is placed on a top surface of the ultrasound transducer. The sample is placed on the top surface of the ultrasound transducer, whereby the sample presses the liquid in the drop into a layer of the liquid between the top surface of the ultrasound transducer and a bottom surface of the sample. The AFM measurements are started after a thickness of the layer of the liquid has stabilized.

Abstract: Atomic force microscopy system comprising an atomic force microscopy device and a substrate carrier having a carrier surface carrying a substrate. The substrate has a substrate main surface and a substrate scanning surface opposite the substrate main surface. The atomic force microscopy device comprises a scan head including a probe. The probe comprises a cantilever and a probe tip arranged on the cantilever. The atomic force device further comprises an actuator cooperating with at least one of the scan head or the substrate carrier for moving the probe tip and the substrate carrier relative to each other in one or more directions parallel to the carrier surface for scanning of the substrate scanning surface with the probe tip. A signal application actuator applies, during said scanning, an acoustic input signal to the substrate, said acoustic input signal generating a first displacement field in a first displacement direction only.

Abstract: The present document relates to a method of performing defect detection on a self-assembled monolayer of a semiconductor element or semi-manufactured semiconductor element, using an atomic force microscopy system. The system comprises a probe with a probe tip, and is configured for positioning the probe tip relative to the element for enabling contact between the probe tip and a surface of the element. The system comprises a sensor providing an output signal indicative of a position of the probe tip. The method comprises: scanning the surface with the probe tip; applying an acoustic vibration signal to the element; obtaining the output signal indicative of the position of the probe tip; monitoring probe tip motion during said scanning for mapping the surface of the semiconductor element, and using a fraction of the output signal for mapping contact stiffness indicative of a binding strength.