Abstract: A display panel includes an amorphous silicon gate driver in which a lower voltage than the gate-off voltage output from the gate driver is applied to an adjacent stage as a low voltage transmission signal.

Abstract: Provided is an analog front-end receiver including: a first equalizer including a first block switch configured to receive a first differential signal through a first node, and configured to block the first differential signal in a first operation mode; a second equalizer including a second block switch configured to receive a second differential signal through a second node, and configured to block the second differential signal in the first operation mode; a terminating resistor provided between the first node and the second node, and configured to receive the first differential signal via the first node, and receive the second differential signal via the second node; and a low pass filter configured to receive a third differential signal converted by the terminating resistor from the first differential signal, and configured to receive a fourth differential signal converted by the terminating resistor from the second differential signal.

Abstract: A semiconductor device includes a source/drain region in a fin-type active pattern, a gate structure adjacent to the source/drain region, and an insulating layer on the source/drain region and the gate structure. A shared contact plug penetrates through the insulating layer and includes a first lower portion connected to the source/drain region, a second lower portion connected to the gate structure, and an upper portion connected to upper surfaces of the first lower portion and the second lower portion. A plug spacer film is between the insulating layer and at least one of the first lower portion and the second lower portion and includes a material different from a material of the insulating layer.

Abstract: The disclosure provides a method of transmitting downlink (DL) control information, the method including: transmitting configuration information about a CORESET in which DL control information is to be transmitted; mapping the DL control information to a plurality of resource elements (REs) in the CORESET determined based on the configuration information; and transmitting the DL control information via the plurality of REs.

Abstract: A 5th Generation (5G) or pre-5G communication system for supporting higher data transmission rates beyond 4th Generation (4G) communication systems such as long term evolution (LTE) systems. A method for transmitting download control information in a communication system is provided. The method includes configuring the control information indicating at least one control channel element (CCE) including at least one resource element group (REG) unit interleaved based on the interleaving information indicated by a higher layer signaling; and transmitting, to a user equipment (UE), the configured control information.

Abstract: Provided are a method of detecting chromosomal aneuploidy of a targeted fetal chromosome, and a computer-readable medium having recorded thereon a program to be applied to performing the method. According to the present disclosure, fetal chromosomal aneuploidy may be non-invasively and prenatally diagnosed with excellent sensitivity and specificity.

Abstract: A semiconductor device includes an isolation structure having first and second sidewalls opposite each other, a first fin-shaped pattern in contact with the first sidewall and extending in the second direction, a second fin-shaped pattern in contact with the second sidewall and extending in the second direction, a first gate electrode on the first fin-shaped pattern, a first source/drain contact on the first and second fin-shaped patterns and extending between the first gate electrode and the element isolation structure, and a wiring structure on and connected to the first source/drain contact, wherein the first source/drain contact includes a lower contact intersecting the first and second fin-shaped patterns, an upper contact protruding from the lower contact, and a dummy contact, the wiring structure being in contact with the upper contact and not with the dummy contact.

Abstract: A 5th Generation (5G) or pre-5G communication system for supporting higher data transmission rates beyond 4th Generation (4G) communication systems such as long term evolution (LTE) systems. A method for transmitting download control information in a communication system is provided. The method includes configuring the control information indicating at least one control channel element (CCE) including at least one resource element group (REG) unit interleaved based on the interleaving information indicated by a higher layer signaling; and transmitting, to a user equipment (UE), the configured control information.

Abstract: Provided is a display device, comprising a display panel which comprises a first area and a second area located around the first area; and an under-panel sheet which is located under the display panel and overlaps the first area and the second area, wherein the under-panel sheet comprises a buffer member and a strength reinforcing member, wherein the strength reinforcing member is thinner than the buffer member, and a ratio of a thickness of the buffer member to a thickness of the strength reinforcing member is 3 to 6 times.

Abstract: A touch panel and method of manufacturing the same are disclosed. In one aspect, the touch panel includes a substrate, a first touch electrode line formed over the substrate and including a plurality of first touch electrodes which are electrically connected to each other, and a second touch electrode line formed to cross the first touch electrode line and being electrically insulated therefrom. The second touch electrode line can include a plurality of second touch electrodes which are electrically connected to each other. The touch panel can also include a plurality of connecting wires respectively connected to the first and second touch electrode lines. At least one of the first touch electrode line, the second touch electrode line, and the connecting wires can include at least one photosensitive conductive layer having a metal nanowire.

Abstract: Provided are a method of detecting chromosomal aneuploidy of a targeted fetal chromosome, and a computer-readable medium having recorded thereon a program to be applied to performing the method. According to the present disclosure, fetal chromosomal aneuploidy may be non-invasively and prenatally diagnosed with excellent sensitivity and specificity.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first direction on the substrate, a gate electrode extending in a second direction intersecting the first direction on the active pattern, a gate spacer extending in the second direction along side walls of the gate electrode, an interlayer insulating layer contacting side walls of the gate spacer, a trench formed on the gate electrode in the interlayer insulating layer, a first capping pattern provided along side walls of the trench, at least one side wall of the first capping pattern having an inclined profile, and a second capping pattern provided on the first capping pattern in the trench.

Abstract: The present invention relates to an animal model for oxidative stress research and use thereof, and more specifically, the present invention can utilize a mutant of RCAT having a regulatory function for an antioxidant stress regulator in Caenorhabditis elegans and a human cell line expressing RCAT as animal and human cell line models for oxidative stress research, using the mutant and the human cell line.

Abstract: An imaging device is described which, in some examples, includes general pixels and phase difference pixels. The general pixels, when operated by control signals, receive light from a subject and generate currents or voltages that are measured; a depth is estimated based on the measurements. The phase difference pixels generate currents based on a switched charge source. Data obtained from the currents generated by the phase difference pixels is used to adjust the control signals and thereby improve an accuracy of the depth estimation.

Abstract: Provided is a display device, comprising a display panel which comprises a first area and a second area located around the first area; and an under-panel sheet which is located under the display panel and overlaps the first area and the second area, wherein the under-panel sheet comprises a buffer member and a strength reinforcing member, wherein the strength reinforcing member is thinner than the buffer member, and a ratio of a thickness of the buffer member to a thickness of the strength reinforcing member is 3 to 6 times.

Abstract: A display panel includes an amorphous silicon gate driver in which a lower voltage than the gate-off voltage output from the gate driver is applied to an adjacent stage as a low voltage transmission signal.

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, and a gate contact in the gate structure. The gate structure includes a gate electrode extending in a first direction and a gate capping pattern on the gate electrode. The gate contact is connected to the gate electrode. The gate electrode includes a protrusion extending along a boundary between the gate contact and the gate capping pattern.

Abstract: The present disclosure relates to an organ extracellular matrix-derived scaffold for culture and transplantation of an organoid and a method of preparing the same.

Abstract: A display panel includes an amorphous silicon gate driver in which a lower voltage than the gate-off voltage output from the gate driver is applied to an adjacent stage as a low voltage transmission signal.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate comprising an element isolation region and an active region defined by the element isolation region, a fin-type pattern on the active region, the fin-type pattern extending in a first horizontal direction, a gate electrode on the fin-type pattern, the gate electrode extending in a second horizontal direction that crosses the first horizontal direction, a capping pattern on the gate electrode, a source/drain region on at least one side of the gate electrode, a source/drain contact on the source/drain region and electrically connected to the source/drain region, and a filling insulating layer on the source/drain contact, the filling insulating layer having a top surface at a same level as a top surface of the capping pattern, and including a material containing a carbon (C) atom.