Patents by Inventor Han Bae

Han Bae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11180538
    Abstract: The invention provides a plasmid comprising two or more anti-obesity genes. Also provided by the invention are compositions and host cells comprising the plasmid and methods of increasing the metabolic activity in a mammal. The invention provides a plasmid comprising two or more of (a) a nucleic acid sequence encoding islet amyloid polypeptide (IAPP), (b) a nucleic acid sequence encoding leptin (LEP), and (c) a nucleic acid sequence encoding fibronectin type III domain containing 5 (FNDC5).
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: November 23, 2021
    Assignee: UNIVERSITY OF UTAH RESEARCH FOUNDATION
    Inventors: You Han Bae, Hongsuk Park, Sungpil Cho
  • Patent number: 11129183
    Abstract: A method for transmitting control information by a base station in a communication system using a plurality of serving cells comprises transmitting is provided. The method includes a terminal, an identifier of a second serving cell identifying where control information regarding a first serving cell is transmitted, transmitting, to the terminal, a predetermined value of a carrier identifier used in the second serving cell, and transmitting the control information regarding the first serving cell including the carrier identifier having the predetermined value through the second serving cell.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: September 21, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Hoon Choi, Himke Van Der Velde, Soeng-Hun Kim, Jae-Hyuk Jang, Young-Bum Kim, Tae-Han Bae
  • Patent number: 11100881
    Abstract: A display panel includes an amorphous silicon gate driver in which a lower voltage than the gate-off voltage output from the gate driver is applied to an adjacent stage as a low voltage transmission signal.
    Type: Grant
    Filed: April 28, 2020
    Date of Patent: August 24, 2021
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jae-Hoon Lee, Seung-Hwan Moon, Yong-Soon Lee, Young-Su Kim, Chang-Ho Lee, Whee-Won Lee, Jun-Yong Song, Yu-Han Bae
  • Publication number: 20210257470
    Abstract: A semiconductor device includes a source/drain region in a fin-type active pattern, a gate structure adjacent to the source/drain region, and an insulating layer on the source/drain region and the gate structure. A shared contact plug penetrates through the insulating layer and includes a first lower portion connected to the source/drain region, a second lower portion connected to the gate structure, and an upper portion connected to upper surfaces of the first lower portion and the second lower portion. A plug spacer film is between the insulating layer and at least one of the first lower portion and the second lower portion and includes a material different from a material of the insulating layer.
    Type: Application
    Filed: April 7, 2021
    Publication date: August 19, 2021
    Inventors: Deok Han BAE, Hyung Jong LEE, Hyun Jin KIM
  • Publication number: 20210257474
    Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, and a gate contact in the gate structure. The gate structure includes a gate electrode extending in a first direction and a gate capping pattern on the gate electrode. The gate contact is connected to the gate electrode. The gate electrode includes a protrusion extending along a boundary between the gate contact and the gate capping pattern.
    Type: Application
    Filed: September 30, 2020
    Publication date: August 19, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: In Yeal LEE, Ju Youn KIM, Jin-Wook KIM, Ju Hun PARK, Deok Han BAE, Myung Yoon UM
  • Publication number: 20210233847
    Abstract: A semiconductor device includes an active pattern extending in a first horizontal direction on a substrate, a gate electrode extending in a second horizontal direction across the active pattern, and including a first portion, and a second portion protruding upward from the first portion in a vertical direction, a capping pattern extending in the second horizontal direction on the gate electrode, and a gate contact disposed on the second portion of the gate electrode, overlapping the active pattern, and penetrating the capping pattern to connect the gate electrode.
    Type: Application
    Filed: August 31, 2020
    Publication date: July 29, 2021
    Inventors: JU YOUN KIM, DEOK HAN BAE, JIN-WOOK KIM, JU HUN PARK, MYUNG YOON UM, IN YEAL LEE
  • Publication number: 20210167892
    Abstract: A 5th Generation (5G) or pre-5G communication system for supporting higher data transmission rates beyond 4th Generation (4G) communication systems such as long term evolution (LTE) systems. A method for transmitting download control information in a communication system is provided. The method includes configuring the control information indicating at least one control channel element (CCE) including at least one resource element group (REG) unit interleaved based on the interleaving information indicated by a higher layer signaling; and transmitting, to a user equipment (UE), the configured control information.
    Type: Application
    Filed: February 10, 2021
    Publication date: June 3, 2021
    Inventors: Tae-Hyoung KIM, Young-Bum KIM, Jin-Young OH, Seung-Hoon CHOI, Tae-Han BAE
  • Publication number: 20210135152
    Abstract: Provided is a display device, comprising a display panel which comprises a first area and a second area located around the first area; and an under-panel sheet which is located under the display panel and overlaps the first area and the second area, wherein the under-panel sheet comprises a buffer member and a strength reinforcing member, wherein the strength reinforcing member is thinner than the buffer member, and a ratio of a thickness of the buffer member to a thickness of the strength reinforcing member is 3 to 6 times.
    Type: Application
    Filed: January 11, 2021
    Publication date: May 6, 2021
    Inventors: Youn Hwan JUNG, Kyu Han BAE, Jae Lok CHA, Kang Yong LEE
  • Patent number: 10998411
    Abstract: A semiconductor device includes a source/drain region in a fin-type active pattern, a gate structure adjacent to the source/drain region, and an insulating layer on the source/drain region and the gate structure. A shared contact plug penetrates through the insulating layer and includes a first lower portion connected to the source/drain region, a second lower portion connected to the gate structure, and an upper portion connected to upper surfaces of the first lower portion and the second lower portion. A plug spacer film is between the insulating layer and at least one of the first lower portion and the second lower portion and includes a material different from a material of the insulating layer.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: May 4, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Deok Han Bae, Hyung Jong Lee, Hyun Jin Kim
  • Publication number: 20210126128
    Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.
    Type: Application
    Filed: December 30, 2020
    Publication date: April 29, 2021
    Inventors: Sang Young KIM, Deok Han BAE, Byung Chan RYU, Da Un JEON
  • Patent number: 10928343
    Abstract: An electronic device includes a connector connected to a cable external to the electronic device and including a plurality of pins; a first water detection circuit connected to at least one first pin of the plurality of pins and generating a first detection result by detecting whether there is water in the connector based on resistance of the at least one first pin; and a second water detection circuit connected to at least one second pin of the plurality of pins, entering a water detection mode when the first detection result indicates the presence of water, and detecting whether there is water in the connector based on resistance of the at least one second pin.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: February 23, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Se-jong Park, Hyeon-je Choe, Je-kook Kim, Ji-yong Kim, Tae-jeong Kim, Jun-han Bae, Hyoung-seok Oh, Jong-haeng Lee
  • Patent number: 10920956
    Abstract: A lamp for a vehicle includes a light source unit including at least one first light source for generating first light and at least one second light source for generating second light formed in a color different from a color of the first light, a light guide unit for guiding the first light and the second light incident through an incident member thereof, a transmission lens disposed between the first light source and the incident member of the light guide unit, through which the first light is incident and emitted, and an outer lens through which at least a portion of the first light and the second light guided by the light guide unit is transmitted. In particular, the color of the first light is changed by the transmission lens and is subsequently changed by the outer lens.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: February 16, 2021
    Assignee: SL Corporation
    Inventors: Jae Hyun Seok, Dong Soo Shin, Jin Han Bae
  • Patent number: 10924215
    Abstract: A 5th Generation (5G) or pre-5G communication system for supporting higher data transmission rates beyond 4th Generation (4G) communication systems such as long term evolution (LTE) systems. A method for transmitting download control information in a communication system is provided. The method includes configuring the control information indicating at least one control channel element (CCE) including at least one resource element group (REG) unit interleaved based on the interleaving information indicated by a higher layer signaling; and transmitting, to a user equipment (UE), the configured control information.
    Type: Grant
    Filed: September 13, 2018
    Date of Patent: February 16, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Hyoung Kim, Young-Bum Kim, Jin-Young Oh, Seung-Hoon Choi, Tae-Han Bae
  • Publication number: 20210041079
    Abstract: A lamp for a vehicle includes a light source unit including at least one first light source for generating first light and at least one second light source for generating second light formed in a color different from a color of the first light, a light guide unit for guiding the first light and the second light incident through an incident member thereof, a transmission lens disposed between the first light source and the incident member of the light guide unit, through which the first light is incident and emitted, and an outer lens through which at least a portion of the first light and the second light guided by the light guide unit is transmitted. In particular, the color of the first light is changed by the transmission lens and is subsequently changed by the outer lens.
    Type: Application
    Filed: June 8, 2020
    Publication date: February 11, 2021
    Inventors: Jae Hyun SEOK, Dong Soo SHIN, Jin Han BAE
  • Publication number: 20210045121
    Abstract: The disclosure provides a method of transmitting downlink (DL) control information, the method including: transmitting configuration information about a CORESET in which DL control information is to be transmitted; mapping the DL control information to a plurality of resource elements (REs) in the CORESET determined based on the configuration information; and transmitting the DL control information via the plurality of REs.
    Type: Application
    Filed: November 8, 2018
    Publication date: February 11, 2021
    Inventors: Tae Hyoung KIM, Young Burn KIM, Hee Don GHA, Tae Han BAE
  • Patent number: 10915205
    Abstract: A touch panel includes: a substrate having a first region and a second region. A plurality of sensing cells are disposed in the first region and a pad portion is disposed in the second region. An insulating interlayer is disposed on the plurality of sensing cells, a connection pattern is disposed on the insulating interlayer, with the connection pattern being electrically connected to adjacent sensing cells through contact holes. A transparent conductive pattern is disposed in the second region and on the insulating interlayer, with the transparent conductive pattern being electrically connected to the plurality of sensing cells and the pad portion.
    Type: Grant
    Filed: January 14, 2018
    Date of Patent: February 9, 2021
    Assignee: Samsung Display Co., Ltd.
    Inventors: Joo-Han Bae, Sung-Ku Kang, Jin-Hwan Kim, Hee-Woong Park, Byeong-Kyu Jeon
  • Patent number: 10910270
    Abstract: A manufacturing and packaging method for a semiconductor die is provided. The method prepares a wafer which has a seal-ring region, forms a first interlayer insulating film on the wafer, forms a metal wiring in the first interlayer insulating film, forms a second interlayer insulating film on the first interlayer insulating film, forms metal pads on the second interlayer insulating film, forms a passivation layer on the metal pads, removes a portion of the passivation layer in a region adjacent to the seal-ring region to expose the second interlayer insulating film, etches a portion of the second interlayer insulating film, forms a bump on the metal pads, removes the first interlayer insulating film and the second interlayer insulating film in the region adjacent to the seal-ring region by a laser grooving process, and dices the wafer into a first semiconductor die and a second semiconductor die.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: February 2, 2021
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Jae Sik Choi, Jin Won Jeong, Byeung Soo Song, Dong Ki Shim, Jin Han Bae
  • Patent number: 10892441
    Abstract: Provided is a display device, comprising a display panel which comprises a first area and a second area located around the first area; and an under-panel sheet which is located under the display panel and overlaps the first area and the second area, wherein the under-panel sheet comprises a buffer member and a strength reinforcing member, wherein the strength reinforcing member is thinner than the buffer member, and a ratio of a thickness of the buffer member to a thickness of the strength reinforcing member is 3 to 6 times.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: January 12, 2021
    Inventors: Youn Hwan Jung, Kyu Han Bae, Jae Lok Cha, Kang Yong Lee
  • Patent number: 10886404
    Abstract: A semiconductor device includes a first active region that extends on a substrate in a first direction, a second active region that extends in parallel with the first active region, an element isolation region between the first and second active regions, a gate structure that extends in a second direction different from the first direction, and intersects the first and second active regions, a lower contact spaced apart from the gate structure in the first direction, the lower contact being on the first active region, the element isolation region, and the second active region, and an upper contact on the lower contact between the first active region and the second active region. A width of the lower contact in the first direction that is on the first active region m narrower than a width of the lower contact in the first direction that is on the element isolation region.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: January 5, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang Young Kim, Deok Han Bae, Byung Chan Ryu, Da Un Jeon
  • Patent number: 10871866
    Abstract: A touch sensor is disclosed to include a first mesh touch electrode formed in a first direction and transmitting a first touch signal, a first supplementary mesh touch electrode formed on the same layer as the first mesh touch electrode, an insulating layer covering the first mesh touch electrode and the first supplementary mesh touch electrode and having a contact cutout, a second mesh touch electrode formed in a second direction crossing the first direction and transmitting a second touch signal, and a second supplementary mesh touch electrode formed on the same layer as the second mesh touch electrode. In this touch sensor, the first mesh touch electrode is connected to the second supplementary mesh touch electrode through the contact cutout and the second mesh touch electrode is connected to the first supplementary mesh touch electrode through the contact cutout.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: December 22, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sung Ku Kang, Joo-Han Bae, Byeong-Jin Lee