Patents by Inventor Han-gu Sohn

Han-gu Sohn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110161578
    Abstract: A semiconductor memory device capable of performing a partial self refresh and semiconductor memory system including same is provided. The semiconductor memory device includes: a memory circuit including a memory array; a skip address storage unit storing an address of an excluded region not requiring refresh in the memory array as a skip address; a refresh address generator providing an address of a region of the memory array requiring refresh as a refresh address; and an address comparator receiving and comparing the skip address and refresh address, and providing a refresh control signal to the memory circuit based on the comparison.
    Type: Application
    Filed: July 2, 2010
    Publication date: June 30, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyung-jik KIM, Han-gu SOHN
  • Publication number: 20110161647
    Abstract: A bootable volatile memory device comprises a volatile memory area configured to be written to and read from by a host processor, a boot code area configured to store bootstrap code before a boot procedure is performed by the host processor, a first chip select terminal configured to output a signal used as a chip select signal where the host processor performs the boot procedure by reading the bootstrap code from the boot code area, and a second chip select terminal configured to output a signal used as a chip select signal where the host processor writes and reads data to and from the volatile memory area.
    Type: Application
    Filed: November 30, 2010
    Publication date: June 30, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Han-gu SOHN, Young-tack JIN
  • Publication number: 20110134686
    Abstract: A semiconductor device includes a plurality of non-volatile memory cells connected between a plurality of word lines and a plurality of bit lines, respectively, and a sense amplifier block for sensing and amplifying a signal of a word line among the plurality of word lines.
    Type: Application
    Filed: November 30, 2010
    Publication date: June 9, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Han Gu Sohn, Dong Yang Lee
  • Patent number: 7941612
    Abstract: A multipath accessible semiconductor memory device provides an interface function between processors. The memory device may include a memory cell array having a shared memory area operationally coupled to two or more ports that are independently accessible by two or more processors, an access path forming unit to form a data access path between one of the ports and the shared memory area in response to external signals applied by the processors, and an interface unit having a semaphore area and mailbox areas accessible in the shared memory area by the two or more processors to provide an interface function for communication between the two or more processors.
    Type: Grant
    Filed: July 27, 2007
    Date of Patent: May 10, 2011
    Assignee: SAMSUNG Electronics Co., Ltd.
    Inventors: Yun-Hee Shin, Han-Gu Sohn, Young-Min Lee, Dong-Hyuk Lee, Jong-Wook Park, Ho-Cheol Lee, Mi-Jo Kim, Jung-Sik Kim, Chang-Ho Lee
  • Publication number: 20110107006
    Abstract: A multiprocessor system and method thereof are provided.
    Type: Application
    Filed: January 10, 2011
    Publication date: May 5, 2011
    Inventors: Yun-Hee Shin, Han-Gu Sohn, Young-Min Lee, Ho-Cheol Lee, Soo-Young Kim, Dong-Hyuk Lee, Chang-Ho Lee
  • Patent number: 7907469
    Abstract: A multi-port volatile memory device can include a first port that is configured for data transfer to/from an external host system and the device. A volatile main memory core is configured to store data received thereat and read requested stored data thereform. A volatile sub memory core can be configured to store data received thereat and read requested stored data therefrom. A main interface circuit can be coupled to the first port and can be configured to provide data to/from the volatile main memory core and the first port in a master mode and can be configured to provide data to/from the volatile sub memory core and the first port in a slave mode. A second port can be configured for data transfer to/from an external non-volatile memory device and the device and a sub interface circuit can be coupled to the second port and configured to provide data to/from the volatile sub memory core and the second port in the slave mode.
    Type: Grant
    Filed: July 31, 2008
    Date of Patent: March 15, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-gu Sohn, Sei-jin Kim
  • Patent number: 7870326
    Abstract: A multiprocessor system and method thereof are provided.
    Type: Grant
    Filed: June 28, 2007
    Date of Patent: January 11, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yun-Hee Shin, Han-Gu Sohn, Young-Min Lee, Ho-Cheol Lee, Soo-Young Kim, Dong-Hyuk Lee, Chang-Ho Lee
  • Publication number: 20100246247
    Abstract: A memory system includes a memory cell array having a plurality of memory sectors. Each memory sector includes a plurality of memory cells. The memory system further includes a controller configured to write data to the memory cell array in response to a writing signal. The controller is further configured to refresh a memory sector among the plurality of memory sectors each time a writing signal is provided. When N (N is a positive integer) memory cells are programmed, a programming current is less than or equal to about 0.75 mA*N.
    Type: Application
    Filed: May 13, 2010
    Publication date: September 30, 2010
    Inventors: Doo-gon Kim, Hui-kwon Seo, Cheol-kyu Kim, Sei-jin Kim, Yoon-ho Khang, Han-gu Sohn, Tae-von Lee, Dae-won Ha
  • Patent number: 7791964
    Abstract: A memory system and related method of operation are disclosed. The memory system includes a memory configured to generate a data strobe signal including “(n/2)+1” clock signals, where “n” is a number of base data blocks in read data synchronously transferred by the memory during a read operation, and a memory controller configured to receive the read data, receive the data strobe signal, delay the data strobe signal to generate a delayed data strobe signal, and synchronously output “n/2” sampled data blocks to a requesting device in relation to the delayed data strobe signal.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: September 7, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Min Lee, Han-Gu Sohn
  • Patent number: 7782683
    Abstract: A multi-port volatile memory device can include a first port that is configured for data transfer to/from an external host system and the device. A volatile main memory core is configured to store data received thereat and read requested stored data thereform. A volatile sub memory core can be configured to store data received thereat and read requested stored data therefrom. A main interface circuit can be coupled to the first port and can be configured to provide data to/from the volatile main memory core and the first port in a master mode and can be configured to provide data to/from the volatile sub memory core and the first port in a slave mode. A second port can be configured for data transfer to/from an external non-volatile memory device and the device and a sub interface circuit can be coupled to the second port and configured to provide data to/from the volatile sub memory core and the second port in the slave mode.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: August 24, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-gu Sohn, Sei-jin Kim
  • Patent number: 7764551
    Abstract: Example embodiments relate to a semiconductor memory system which may include a volatile memory and a non-volatile memory that share a common bus, and a method for controlling the operation of the non-volatile memory. The semiconductor memory system may include a non-volatile memory and a memory controller. The non-volatile memory may include a buffer memory that temporarily stores data to be read from or to be written to a memory cell array, and an internal controller. The memory controller may transmits a mode signal to the non-volatile memory in response to a control signal, the control signal corresponds to either a read mode or a write mode to be applied to the non-volatile memory. In response to the mode signal, the internal controller may control the data to be read to be stored in the buffer memory, if the read mode is to be applied, and the internal controller may control the buffer memory to stand-by until a write command is received, if the write mode is to be applied.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: July 27, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hui-kwon Seo, Han-gu Sohn, Sei-jin Kim
  • Publication number: 20100153637
    Abstract: A plurality of masters arbitrate for access to a shared memory device, such as a SDRAM (synchronous dynamic random access memory), amongst themselves using software and arbitration interfaces. The masters generate additional commands upon arbitration, such as MRS and PALL commands, for prevention of collision of commands, refresh starvation, and/or a missing pre-charge operation in the shared memory device.
    Type: Application
    Filed: February 17, 2010
    Publication date: June 17, 2010
    Inventors: Young-Min Lee, Sung-Jae Byun, Han-Gu Sohn, Gyoo-Cheol Hwang
  • Patent number: 7697362
    Abstract: A plurality of masters arbitrate for access to a shared memory device, such as a SDRAM (synchronous dynamic random access memory), amongst themselves using software and arbitration interfaces. The masters generate additional commands upon arbitration, such as MRS and PALL commands, for prevention of collision of commands, refresh starvation, and/or a missing pre-charge operation in the shared memory device.
    Type: Grant
    Filed: September 15, 2006
    Date of Patent: April 13, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Min Lee, Sung-Jae Byun, Han-Gu Sohn, Gyoo-Cheol Hwang
  • Publication number: 20090254698
    Abstract: A multiport semiconductor memory device includes; first and second port units respectively coupled to first and second processors, first and second dedicated memory area accessed by first and second processors, respectively and implemented using DRAM cells, a shared memory area commonly accessed by the first and second processors via respective first and second port units and implemented using memory cells different from the DRAM cells implementing the first and second dedicated memory areas, and a port connection control unit controlling data path configuration between the shared memory area and the first and second port units to enable data communication between the first and second processors through the shared memory area.
    Type: Application
    Filed: February 25, 2009
    Publication date: October 8, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Hyoung KWON, Kyung-Woo NAM, Han-Gu SOHN, Ho-Cheol LEE, Kwang-Myeong JANG
  • Publication number: 20090210691
    Abstract: A booting method of a digital processing having a first processor and a second processor is provided. An interface between the first processor and the outside is stopped. A second processor program code is transmitted to a second memory from a first memory. A second stage loader (SSL) for the first processor is transmitted to a buffer of the second processor from the first memory. A first processor program code is transmitted to the second memory from the first memory under the control of the second processor and an interface between the first processor and the outside is resumed. The first processor program code is downloaded fast into the second memory to decrease booting time of the digital processing system.
    Type: Application
    Filed: April 27, 2009
    Publication date: August 20, 2009
    Inventors: Jeon-Taek Im, Young-Min Lee, Han-Gu Sohn, Jin-Hyoung Kwon, Sung-Jae Byun, Yun-Tae Lee, Gyoo-Cheol Hwang
  • Patent number: 7539825
    Abstract: A memory system includes a first external device, a second external device, and a multi-port memory device connected to the first and second external devices. The multi-port memory system includes: a first port and a second port connected to the first and second external devices, respectively, a first bank group having at least one memory bank, the first bank group configured to be accessed by the first external device through the first data port; a second bank group having at least one memory bank, the second bank group configured to be accessed by the second external device through the second data port; a third bank group having at least one memory bank, wherein the third bank group is configured to be selectively accessed by the first external device through the first data port or the second external device through the second data port. The multi-port memory system may prevent data collisions which occur when two ports simultaneously attempt to access the same memory bank.
    Type: Grant
    Filed: February 1, 2006
    Date of Patent: May 26, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han-Gu Sohn, Woon-Sik Suh, Yun-Tae Lee, Sei-Jin Kim
  • Publication number: 20090089573
    Abstract: A multiprocessor system having a direct access boot operation and a direct access boot method are provided to substantially reduce a boot error of processor that does not provide a memory link architecture in the multiprocessor system.
    Type: Application
    Filed: September 16, 2008
    Publication date: April 2, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Hyoung KWON, Han-Gu SOHN
  • Publication number: 20090089487
    Abstract: A multiprocessor system includes a first processor for performing a first task, a second processor for performing a second task, and a multiport semiconductor memory device having a protocol-defined area for defining a specification related to data communication between the first processor and the second processor. The protocol-defined area is located in at least one shared memory area accessible in common by the first processor and the second processor through a first port and a second port, respectively, and is assigned as a predetermined memory capacity to a portion of a memory cell array.
    Type: Application
    Filed: August 25, 2008
    Publication date: April 2, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Hyoung KWON, Han-Gu SOHN, Kwang-Myeong JANG
  • Publication number: 20090089545
    Abstract: A multiport semiconductor memory device having a processor wake-up function and multiprocessor system employing the same is provided. The multiprocessor system includes: a first processor configured to perform a first predetermined task; a second processor configured to perform a second predetermined task; and a multiport semiconductor memory device coupled to the first processor and the second processor, the multiport semiconductor memory device including: a memory cell array having at least one shared memory area; a first port coupled to the at least one shared memory area; a second port coupled to the at least one shared memory area; and a wake-up signal generator, the first processor being coupled to the at least one shared memory area via the first port, the second processor being coupled to the at least one shared memory area via the second port, the wake-up signal generator being coupled to the first processor and the second processor.
    Type: Application
    Filed: September 23, 2008
    Publication date: April 2, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-Hyoung KWON, Han-Gu SOHN, Kwang-Myeong JANG
  • Publication number: 20090024803
    Abstract: A semiconductor memory device for use in a multiprocessor system may be provided. A chip size may be controlled, and a design of circuit may be relatively simplified. The semiconductor memory device for use in a multiprocessor system may include at least two shared memory areas commonly accessible by processors of the multiprocessor system through different ports and assigned with a predetermined memory capacity unit to a portion of a memory cell array, a single shared register adapted outside the memory cell array, corresponding to disable areas formed within the shared memory areas, and/or a switching unit for connecting a decoder of a selected shared memory area to the shared register in response to an applied control signal, to match the shared register to the disable area of the selected shared memory area. A shared register may be commonly used in corresponding to a plurality of shared memory areas, thereby reducing or preventing a chip size increase and simplifying a design of the circuit.
    Type: Application
    Filed: July 1, 2008
    Publication date: January 22, 2009
    Inventors: Jin-Hyoung Kwon, Han-Gu Sohn