Abstract: A multiport semiconductor memory device includes; first and second port units respectively coupled to first and second processors, first and second dedicated memory area accessed by first and second processors, respectively and implemented using DRAM cells, a shared memory area commonly accessed by the first and second processors via respective first and second port units and implemented using memory cells different from the DRAM cells implementing the first and second dedicated memory areas, and a port connection control unit controlling data path configuration between the shared memory area and the first and second port units to enable data communication between the first and second processors through the shared memory area.

Abstract: A multiport semiconductor memory device having a processor wake-up function and multiprocessor system, the multiprocessor system including a first processor configured to perform a first predetermined task; a second processor configured to perform a second predetermined task; and a multiport semiconductor memory device coupled to the first and second processors. The multiport semiconductor memory device includes a memory cell array having at least one shared memory area; a first port coupled to the at least one shared memory area; a second port coupled to the at least one shared memory area; and a wake-up signal generator. The first processor is coupled to the at least one shared memory area via the first port, the second processor is coupled to the at least one shared memory area via the second port, and the wake-up signal generator is coupled to the first processor and the second processor.

Abstract: A system having a memory device accessible by a plurality of processors is provided. The system includes a memory device, a first processor, and a second processor. The memory device has a first memory array part and a second memory array part. The first processor predominantly accesses the first memory array part of the memory device and selectively accesses the second memory array part of the memory device. The second processor predominantly accesses the second memory array part of the memory device and selectively accesses the first memory array part of the memory device.

Abstract: A multiprocessor system includes first and second processors and a multi-path accessible semiconductor memory device including a shared memory area and a pseudo operation execution unit. The shared memory area is accessible by the first and second processors according to a page open policy. The pseudo operation execution unit responds to a virtual active command from one of the first and second processors to close a last-opened page. The virtual active command is generated with a row address not corresponding to any row of the shared memory area. For example, bit-lines of a last accessed row are pre-charged for closing the last-opened page.

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity type, at least two first well regions which have a second conductivity type and a predetermined depth in the semiconductor substrate, at least one second well region which has the first conductivity type and a predetermined depth in each of the first well regions, and a guard-ring region which has the second conductivity type and a predetermined depth and is positioned between the first well regions to be separated by a predetermined distance from the first well regions. The guard-ring region is connected to a ground voltage.

Abstract: A multiprocessor system includes a first processor coupled to a first bus, a second processor coupled to a second bus, a first memory coupled to the first bus and the second bus, and a second memory coupled to the second bus. The first processor is configured to access the first memory through the first bus, and the second processor is configured to access the first memory and the second memory through the second bus.

Abstract: A semiconductor memory device capable of performing a partial self refresh and semiconductor memory system including same is provided. The semiconductor memory device includes: a memory circuit including a memory array; a skip address storage unit storing an address of an excluded region not requiring refresh in the memory array as a skip address; a refresh address generator providing an address of a region of the memory array requiring refresh as a refresh address; and an address comparator receiving and comparing the skip address and refresh address, and providing a refresh control signal to the memory circuit based on the comparison.

Abstract: A bootable volatile memory device comprises a volatile memory area configured to be written to and read from by a host processor, a boot code area configured to store bootstrap code before a boot procedure is performed by the host processor, a first chip select terminal configured to output a signal used as a chip select signal where the host processor performs the boot procedure by reading the bootstrap code from the boot code area, and a second chip select terminal configured to output a signal used as a chip select signal where the host processor writes and reads data to and from the volatile memory area.

Abstract: A semiconductor device includes a plurality of non-volatile memory cells connected between a plurality of word lines and a plurality of bit lines, respectively, and a sense amplifier block for sensing and amplifying a signal of a word line among the plurality of word lines.

Abstract: A multipath accessible semiconductor memory device provides an interface function between processors. The memory device may include a memory cell array having a shared memory area operationally coupled to two or more ports that are independently accessible by two or more processors, an access path forming unit to form a data access path between one of the ports and the shared memory area in response to external signals applied by the processors, and an interface unit having a semaphore area and mailbox areas accessible in the shared memory area by the two or more processors to provide an interface function for communication between the two or more processors.

Abstract: A multiprocessor system and method thereof are provided.

Abstract: A multi-port volatile memory device can include a first port that is configured for data transfer to/from an external host system and the device. A volatile main memory core is configured to store data received thereat and read requested stored data thereform. A volatile sub memory core can be configured to store data received thereat and read requested stored data therefrom. A main interface circuit can be coupled to the first port and can be configured to provide data to/from the volatile main memory core and the first port in a master mode and can be configured to provide data to/from the volatile sub memory core and the first port in a slave mode. A second port can be configured for data transfer to/from an external non-volatile memory device and the device and a sub interface circuit can be coupled to the second port and configured to provide data to/from the volatile sub memory core and the second port in the slave mode.

Abstract: A semiconductor chip may include a plurality of pads arranged in at least a first and a second row, and a plurality of protection circuits connected to the plurality of pads. The plurality of protection circuits may include at least one diode. A first protection circuit may be connected to a first pad in the first row of pads, and a second protection circuit may be connected to a second pad in the second row of pads. The first and second protection circuits may be arranged under the first row of pads.

Abstract: An electrostatic discharge circuit between a first pad and a second pad including an electrostatic discharge circuit element, including a bipolar transistor path and a resistor path, the electrostatic discharge circuit element alternately discharging an electrostatic current through the bipolar transistor path and the resistor path.

Abstract: A multiprocessor system and method thereof are provided.

Abstract: An overvoltage protection circuit includes primary and secondary clamping circuits. The primary clamping circuit is configured to sink overvoltage current from a power supply voltage node (e.g., Vdd) to a reference voltage node (e.g., Vss) in response to an overvoltage condition at the power supply voltage node. The secondary clamping circuit, which is electrically coupled to an output of the primary clamping circuit, is configured to sink additional overvoltage current from the power supply voltage node to the reference node in response to detection of a overvoltage flag at the output of the primary clamping circuit. This overvoltage flag may be represented by a transition (e.g., low-to-high or high-to-low) of a signal generated at an output of the primary clamping circuit.

Abstract: A memory system includes a memory cell array having a plurality of memory sectors. Each memory sector includes a plurality of memory cells. The memory system further includes a controller configured to write data to the memory cell array in response to a writing signal. The controller is further configured to refresh a memory sector among the plurality of memory sectors each time a writing signal is provided. When N (N is a positive integer) memory cells are programmed, a programming current is less than or equal to about 0.75 mA*N.

Abstract: A memory system and related method of operation are disclosed. The memory system includes a memory configured to generate a data strobe signal including “(n/2)+1” clock signals, where “n” is a number of base data blocks in read data synchronously transferred by the memory during a read operation, and a memory controller configured to receive the read data, receive the data strobe signal, delay the data strobe signal to generate a delayed data strobe signal, and synchronously output “n/2” sampled data blocks to a requesting device in relation to the delayed data strobe signal.

Abstract: An electrostatic discharge (ESD) protection element includes a first diode, a second diode, and a poly resistor. The first diode is connected between a first voltage and an input/output (I/O) pad. The second diode is connected between the I/O pad and a second voltage. The poly resistor is formed on the second diode.

Abstract: A multi-port volatile memory device can include a first port that is configured for data transfer to/from an external host system and the device. A volatile main memory core is configured to store data received thereat and read requested stored data thereform. A volatile sub memory core can be configured to store data received thereat and read requested stored data therefrom. A main interface circuit can be coupled to the first port and can be configured to provide data to/from the volatile main memory core and the first port in a master mode and can be configured to provide data to/from the volatile sub memory core and the first port in a slave mode. A second port can be configured for data transfer to/from an external non-volatile memory device and the device and a sub interface circuit can be coupled to the second port and configured to provide data to/from the volatile sub memory core and the second port in the slave mode.