Abstract: A power module, includes a leadless frame substrate including a first metal layer and an insulating layer, wherein the first metal layer forms a circuit trace disposed on the insulating layer and the first metal layer has an extension structure extending out of the insulating layer to serve as an output terminal; at least one semiconductor power device disposed on the first metal layer; a current detector disposed on the output terminal; and a molding compound, completely covering the first metal layer on the insulating layer of the leadless frame substrate and the at least one semiconductor power device, and partially covering the output terminal so that the current detector is completely disposed outside the molding compound.

Abstract: A power semiconductor device, including a terminal base, is provided. The terminal base has a first end and a second end opposite to each other. The first end has a first flange expanding outward. The first flange is welded to a pad of a substrate by a solder. An included angle between an extension direction of the first flange and a length direction of the terminal base is greater than 90 degrees.

Abstract: An optical device is provided. The optical device includes a substrate and a plurality of optical structures. The substrate includes a plurality of photoelectric conversion elements. The optical structures are disposed above the substrate. Each optical structure corresponds to one photoelectric conversion element. Each optical structure includes a first portion and a second portion. The first portion has a first glass transition temperature. The second portion has a second glass transition temperature. The second portion guides the incident light into the photoelectric conversion element. The first glass transition temperature is higher than the second glass transition temperature.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a first color filter segment and a second color filter segment adjacent to the first color filter segment. The first color filter segment and the second color filter segment correspond to different colors. The solid-state image sensor also includes a shielding grid structure disposed between the first color filter segment and the second color filter segment. The shielding grid structure is divided into a first shielding segment and a second shielding segment. The solid-state image sensor further includes a meta structure disposed above the color filter layer. In a top view, the second shielding segment is formed as a triangle, a rectangle, or a combination thereof.

Abstract: An image sensor includes a sensor layer and a color filter layer disposed on the sensor layer. The image sensor further includes a lens layer disposed on the color filter layer. The lens layer includes a plurality of micro lenses. The image sensor further includes a first cut filter layer disposed over the lens layer. The first surface of the first cut filter layer has a plurality of first protrusions.

Abstract: The present disclosure provides a color filter array. The color filter array includes at least one minimal repeating unit, wherein the at least one minimal repeating unit includes a first filter set and a second filter set. The first filter set includes a first color filter having a first spectrum, two second color filters having a second spectrum and a third color filter having a third spectrum. The second filter set includes a fourth color filter having the first spectrum, two fifth color filters having the second spectrum, a sixth color filter having the third spectrum and a plurality of broadband filters. The second filter set is arranged to form a quadrilateral annulus, and the first filter set is positioned in an interior of the quadrilateral annulus. The present disclosure also provides a demosaicing method for an image captured via the color filter array.

Abstract: An image sensor includes a first color filter disposed on a first photodiode, a first grid, and a first micro lens disposed on the first color filter and the first grid. The first grid includes a first main portion and a first shielding portion extended from the first main portion. The first main portion surrounds the first color filter and the first shielding portion partially covers the first color filter such that a first cavity defined by the first shielding portion is configured over the first color filter. The first color filter or the first micro lens includes a first protruding portion filled in the first cavity, and a width of the first protruding portion is in a range from 0.1 pixel size to 0.8 pixel size. A manufacturing method of an image sensor is also disclosed.

Abstract: An optical device includes a photoelectric conversion layer, an underlying layer, an anti-reflection layer, and a plurality of meta units. The underlying layer is disposed on the photoelectric conversion layer. The anti-reflection layer is disposed on the underlying layer. The meta units are disposed above the photoelectric conversion layer, in which each of the meta units includes a top portion and a bottom portion, and a projection of the bottom portion on the photoelectric conversion layer is within a projection of the top portion on the photoelectric conversion layer.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The photoelectric conversion elements and the color filter layer form normal pixels and auto-focus pixels, the color filter layer that correspond to the normal pixels are divided into first color filter segments and second color filter segments, the first color filter segments are disposed on at least one side that is closer to an incident light, and the width of the first color filter segments is greater than the width of the second color filter segments.

Abstract: The present disclosure provides a power module including a substrate, a plurality of semiconductor devices, a plurality of pins and a encapsulation material. The semiconductor devices are disposed on the first metal surface of the substrate. The extending direction of each pin is perpendicular to the bottom side of the first metal surface. Each of pins extends out of the encapsulation material along an identical direction. The plurality of pins include a positive and a negative voltage pins. An end of the positive voltage pin is attached to the middle position of the first side of the first metal surface. An end of the negative voltage pin is attached to the middle position of the second side of the first metal surface. The first and second sides are spatially opposite to each other, and the first and second sides are connected to the bottom side of the first metal surface.

Abstract: An optical device includes a photoelectric conversion layer, an anti-reflection layer, an underlying layer, a bottom meta layer, and a top meta layer. The photoelectric conversion layer includes a plurality of photodiodes. The anti-reflection layer is disposed on the photoelectric conversion layer. The underlying layer is disposed on the anti-reflection layer. The bottom meta layer is disposed on the underlying layer and includes a plurality of bottom meta units and a filling between the bottom meta units, in which the filling is continuously extend from the underlying layer, and a material of the filling is the same as a material of the underlying layer. The top meta layer is disposed above the bottom meta layer and includes a plurality of top meta units and a plurality of air recesses, in which the plurality of air recesses are respectively disposed between two adjacent top meta units.

Abstract: The present disclosure provides a color filter array. The color filter array includes at least one minimal repeating unit, wherein the at least one minimal repeating unit includes a first filter set and a second filter set. The first filter set includes a first color filter having a first spectrum, two second color filters having a second spectrum and a third color filter having a third spectrum. The second filter set includes a fourth color filter having the first spectrum, two fifth color filters having the second spectrum, a sixth color filter having the third spectrum and a plurality of broadband filters. The second filter set is arranged to form a quadrilateral annulus, and the first filter set is positioned in an interior of the quadrilateral annulus. The present disclosure also provides a demosaicing method for an image captured via the color filter array.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The photoelectric conversion elements form an N×N pixel array, where N is a positive integer larger than or equal to 3. The solid-state image sensor also includes a modulation layer disposed above the photoelectric conversion elements. The solid-state image sensor further includes a light-adjusting structure disposed on the modulation layer and corresponding to the N×N pixel array. The N×N pixel array includes a first pixel region having at least one first pixel. The N×N pixel array also includes a second pixel region adjacent to the first pixel region in a first direction and in a second direction different from the first direction and having second pixels. The aperture ratio of the first pixel and the aperture ratio of the second pixel are different.

Abstract: An image sensor includes groups of sensor units, and a color filter layer having color units that disposed within the groups of sensor units, respectively. The color units of the color filter layer include a yellow color unit or a white color unit. The image sensor further includes a dielectric structure disposed on the color filter layer, and a meta surface disposed on the dielectric structure.

Abstract: The present disclosure provides a light sensing element including a unit. The unit includes a plurality of photodiodes, a color filter disposed above the photodiodes, and a light host embedded in the color filter. The light host is a hollow structure disposed above the photodiodes. The color filter includes a first portion surrounding the light host, a second portion surrounded by the light host, and a third portion covering and physically contacting the first portion, the light host, and the second portion.

Abstract: An operating method of an under-display camera system includes: providing a raw data by a pixel array; generating, by a plurality of color filters respectively disposed on a plurality of first photodiodes of the pixel array, a color information in accordance with the raw data; generating, by a plurality of first narrowband filters respectively disposed on a plurality of second photodiodes of the pixel array, a first narrowband information in accordance with the raw data, wherein a spectrum linewidth of the plurality of first narrowband filters is in a range from 5 nm to 70 nm; reconstructing an edge information from the first narrowband information based on one of a plurality of diffraction patterns provided by a database unit of a point spread function; and obtaining an image by combining the edge information with the color information.

Abstract: An operating method of an under-display camera system includes: providing a raw data by a pixel array; generating, by a plurality of color filters respectively disposed on a plurality of first photodiodes of the pixel array, a color information in accordance with the raw data; generating, by a plurality of first narrowband filters respectively disposed on a plurality of second photodiodes of the pixel array, a first narrowband information in accordance with the raw data, wherein a spectrum linewidth of the plurality of first narrowband filters is in a range from 5 nm to 70 nm; reconstructing an edge information from the first narrowband information based on one of a plurality of diffraction patterns provided by a database unit of a point spread function; and obtaining an image by combining the edge information with the color information.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a first color filter segment and a second color filter segment adjacent to the first color filter segment. The first color filter segment and the second color filter segment correspond to different colors. The solid-state image sensor further includes a light-splitting structure disposed in the first color filter segment or the second color filter segment and a grid structure disposed between the first color filter segment and the second color filter segment. The light-splitting structure is separated from the grid structure.

Abstract: An image sensor includes a sensor unit, a sensing portion disposed within the sensor unit, and an isolation structure corresponding to the sensing portion. The isolation structure includes a first deep trench isolation (DTI) structure surrounding the sensor unit from top view, and a second deep trench isolation structure laterally enclosed by the first deep trench isolation structure. The second deep trench isolation structure is located close to a corner of the sensor unit defined by the first deep trench isolation structure. The second deep trench isolation structure is asymmetrical with respect to a horizontal middle line or a vertical middle line within the sensor unit.