Power module
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Description
The broken line portions in the drawing views are included to show portions of the power module only and form no part of the claimed design.
Claims
The ornamental design for a power module as shown and described.
Referenced Cited
U.S. Patent Documents
Foreign Patent Documents
Other references
D448740 | October 2, 2001 | Iwasaki |
D470824 | February 25, 2003 | Iwasaki |
D483011 | December 2, 2003 | Shimada |
D488773 | April 20, 2004 | Shimada |
D489038 | April 27, 2004 | Shimada |
D824866 | August 7, 2018 | Matsubara |
D920264 | May 25, 2021 | McBride |
D973029 | December 20, 2022 | Tanikawa |
20110278706 | November 17, 2011 | Herras |
20160192493 | June 30, 2016 | Ehrmann |
20230369163 | November 16, 2023 | Yang |
20240194554 | June 13, 2024 | Wong |
308593855 | April 2024 | CN |
D1617692 | November 2018 | JP |
D1692090 | August 2021 | JP |
D1724640 | September 2022 | JP |
D1730560 | November 2022 | JP |
- (Pack of 4) ASEMI Bridge Rectifier D50XB160 DIP-4 Package Through Hole Rectifier, dated Sep. 11, 2018, [online], [site visited Sep. 23, 2024]. Available from Internet, URL: https://www.amazon.com/ASEMI-Rectifier-D50XB160-Package-Through/dp/B07Y4LBDKN (Year: 2018).
- Business Wire, Toyoda Gosei Develops Vertical GaN Power Device . . . , dated May 23, 2019, [online], [site visited Sep. 23, 2024]. Available from Internet, URL: https://www.businesswire.com/news/home/20190522005428/en/Toyoda-Gosei-Develops-Vertical-GaN-Power-Device-With-Current-Operation-of-100-Amperes (Year: 2019).
- Mitsubishi launching 4-terminal 1200V SiC MOSFETs, dated Nov. 12, 2020, [online], [site visited Sep. 23, 2024]. Available from Internet, URL:https://www.semiconductor-today.com/news_items/2020/nov/mitsubishi-121120.shtml (Year: 2020).
- Future Electronics, Infineon: Experience the difference of Si / SiC / GaN technology, dated Dec. 15, 2020, [online], [site visited Sep. 23, 2024]. Available from Internet, URL: https://www.youtube.com/watch?v=aake09AW1D8 (Year: 2020).
Patent History
Patent number: D1055880
Type: Grant
Filed: Dec 13, 2022
Date of Patent: Dec 31, 2024
Assignee: Delta Electronics, Inc. (Taoyuan)
Inventors: Jen-Hsien Wong (Taoyuan), Han-Lin Wu (Taoyuan), Chun-Liang Chiang (Taoyuan), Tai-Kuang Lee (Taoyuan)
Primary Examiner: Shawn T Gingrich
Assistant Examiner: Jorge Serrano Rodriguez
Application Number: 29/862,863
Type: Grant
Filed: Dec 13, 2022
Date of Patent: Dec 31, 2024
Assignee: Delta Electronics, Inc. (Taoyuan)
Inventors: Jen-Hsien Wong (Taoyuan), Han-Lin Wu (Taoyuan), Chun-Liang Chiang (Taoyuan), Tai-Kuang Lee (Taoyuan)
Primary Examiner: Shawn T Gingrich
Assistant Examiner: Jorge Serrano Rodriguez
Application Number: 29/862,863
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)