Abstract: An apparatus for automatically fastening a chemical coupler to a connector of an automatic clean quick coupler (ACQC) system, includes a main body, a multi-degree of freedom (DOF) robot arm on the main body, a gripper on the multi-DOF robot arm that is configured to grip the chemical coupler, a vision sensor on the multi-DOF robot arm, and a controller connected to the gripper, the multi-DOF robot arm, and the vision sensor. The controller uses information about an environment surrounding the multi-DOF robot arm acquired by the vision sensor, to control an operation of the multi-DOF robot arm and an operation of the gripper.

Abstract: Disclosed are a BS apparatus, a terminal apparatus, and a QoS control method for implementing the service flow-based QoS control without increasing complexity compared to the conventional bearer-based QoS control method.

Abstract: An electrode assembly comprises: a negative electrode, a separator, and at least two or more positive electrodes which are stacked in the electrode assembly with the negative electrode and the separator, each of the positive electrodes including a positive electrode active material applied to a surface of a positive electrode collector, wherein the positive electrode active material contains nickel, cobalt, and manganese, and a first composition ratio of nickel, cobalt, and manganese in the positive electrode active material applied to a first one of the positive electrodes is different from a second composition ratio of nickel, cobalt, and manganese in the positive electrode active material applied to a second one of the positive electrodes. The first and second positive electrodes may be stacked to adequately improve thermal stability and capacity.

Abstract: A semiconductor device including: first and second cell regions; a substrate including first and second surfaces; first to third active patterns extending in a first horizontal direction in the first cell region, the first to third active patterns spaced apart from each other in a second horizontal direction; a fourth active pattern extending in the first horizontal direction in the second cell region, the fourth active pattern is aligned with the second active pattern in the first horizontal direction; an active cut separating the second and fourth active patterns; a source/drain region on the second active pattern; a buried rail extending in the first horizontal direction on the second surface of the substrate, the first buried rail overlaps each of the second and fourth active patterns in a vertical direction; and a source/drain contact penetrating the substrate and second active pattern and connecting the source/drain region to the buried rail.

Abstract: A memory system includes a memory controller, a first memory module including first and second groups of first memory chips, a second memory module including first and second groups of second memory chips, and a channel including a first group of signal lines suitable for coupling the memory controller with the first memory module, and a second group of signal lines suitable for coupling the memory controller with the second memory module.

Abstract: A method of manufacturing a multilayer ceramic capacitor includes preparing a ceramic green sheet in which a plurality of internal electrode patterns are formed with a predetermined distance therebetween, forming a ceramic laminate by laminating a plurality of the ceramic green sheets in a first direction, cutting the ceramic laminate to have a side surface from which an end of the internal electrode pattern is exposed in a second direction perpendicular to the first direction, forming a margin portion on the side surface from which the end of the internal electrode pattern is exposed, and forming a ceramic body including a dielectric layer and an internal electrode by firing the cut-out ceramic laminate. The forming a margin portion includes flowing a ceramic paste from an upper portion to a lower portion of the cut-out ceramic laminate.

Abstract: A memory device including a first substrate, a peripheral circuit provided on the first substrate, a first metal bonding layer provided on the peripheral circuit, a second metal bonding layer directly bonded to the first metal bonding layer, a memory cell array provided on the second metal bonding layer; and a second substrate provided on the memory cell array. A page buffer circuit in the peripheral circuit receives a verification result through the metal bonding layers, divides the verification result into stages, and sequentially outputs the verification result for the division into the stages, and a pass/failure checker in the peripheral circuit sequentially performs a counting operation about each of the stages to generate accumulated values, and compares the accumulated values and a reference value which increases from an initial value as the counting operation is performed, and the initial value is set by an external memory controller.

Abstract: A foldable portable device is disclosed. The foldable portable device according to the present invention includes a first body provided with a first lens configured to recognize an object and a first image sensor configured to detect an image of the object recognized by the first lens, a second body coupled to the first body to be folded toward the first body and provided with a second lens configured to adjust a focus for the object recognized through the first lens, and a first controller provided in the second body and configured to adjust a magnification of the object focused by the second lens, wherein the first lens and the second lens are provided to have the same optical path when the second body is folded toward the first body and overlaps the first body.

Abstract: A secondary battery includes a separator in an electrode assembly thereof that has a sealing part for individually sealing a positive electrode and a negative electrode and has a double sealing structure. The double sealing structure including a first sealing part and a second sealing part so that an accommodation part for accommodating a fire extinguishing agent is provided at an end part of the negative electrode. Further, the secondary battery includes a flame propagation prevention part disposed on an outer surface of the electrode assembly so that a flame generated during thermal runaway of the secondary battery can be blocked in a stage in which the electrode assembly is positioned inside the battery cell, and thus a longer flame propagation time can be induced.

Abstract: A lithium secondary battery with improved lifetime characteristics, a driving method thereof, a battery module including the same, and a battery pack including the battery module, provides the lithium secondary battery having an operating voltage that is less than a plateau voltage of the lithium/nickel composite oxide, and thus has an advantage of being enable to prevent the lithium/nickel composite oxide from being transferred to a spinel-like structure, suppress the capacity degradation according to an increase in cycle, and improve a lifetime characteristic.

Abstract: A semiconductor memory device includes a peripheral gate structure disposed on a substrate, a bit line disposed on the peripheral gate structure and extending in a first direction, a shielding structure disposed adjacent to the bit line on the peripheral gate structure and extending in the first direction, a first word line disposed on the bit line and the shielding structure and extending in a second direction, a second word line disposed on the bit line and the shielding structure, extending in the second direction, and spaced apart from the first word line in the first direction, first and second active patterns disposed on the bit line and disposed between the first and second word lines, and contact patterns connected to the first and second active patterns.

Abstract: A method for predicting a lifespan of a battery cell of the present invention includes: virtually dividing a capacity of a battery cell, which is a measurement object for lifespan prediction, into two or more capacity parts, and measuring charge and discharge cycle data for each of the capacity parts; correcting the charge and discharge cycle data by reflecting storage degeneration a positive electrode active material; and predicting a lifespan of the battery cell, based on the corrected charge and discharge cycle data.

Abstract: A printed circuit board includes an insulating layer; a recess portion disposed on one surface of the insulating layer; and a circuit layer disposed on the one surface of the insulating layer and including a signal pattern and a ground pattern. At least a portion of the ground pattern covers at least a portion of the recess portion.

Abstract: The present invention is related to a method for fabricating a semiconductor device capable of forming fine patterns. The method for fabricating the semiconductor device according to the present invention may comprise forming an etch mask layer on an etch target layer; forming a spacer structure in which first spacers and second spacers are alternately disposed and spaced apart from each other on the etch mask layer; forming first spacer lines through selective etching of the first spacers; forming second spacer lines through selective etching of the second spacers; and etching the etch target layer to form a plurality of fine line patterns using the first and second spacer lines.

Abstract: A sensor for measuring a temperature change amount. The sensor includes a first composite material layer including a polymer having a volume changing according to a temperature change amount; an electrode layer provided on one side of the first composite material layer and capable of representing the temperature change amount as a resistance change amount; and a second composite material layer at least partially provided on the upper side of the first composite material layer and containing polydimethylsiloxane (PDMS) and at least one of carbon nanotubes (CNT), boron nitride nanotubes (BNNT), and graphene or containing a thermoplastic polyurethane (TPU) so that the temperature change occurring on one side thereof is transferred to the other side thereof.

Abstract: A display device includes: a base layer; a circuit layer on the base layer; and an element layer on the circuit layer and including a plurality of light emitting elements and a photo-sensing element, wherein the plurality of light emitting elements include: a first emission layer configured to emit a first color light; a second emission layer configured to emit a second color light different from the first color light; and a third emission layer configured to emit a third color light different from the first color light and the second color light, and the photo-sensing element includes a photoelectric conversion layer overlapping at least any one of a part of the first emission layer, a part of the second emission layer, or a part of the third emission layer.

Abstract: A memory device includes: a first substrate; a peripheral circuit provided on the first substrate; a first metal bonding layer provided on the peripheral circuit; a second metal bonding layer directly bonded to the first metal bonding layer; a memory cell array provided on the second metal bonding layer; and a second substrate provided on the memory cell array. A page buffer circuit in the peripheral circuit receives a verification result through the metal bonding layers, divides the verification result into stages, and sequentially outputs the verification result for the division into the stages, and a pass/failure checker in the peripheral circuit sequentially performs a counting operation about each of the stages to generate accumulated values, and compares the accumulated values and a reference value which increases from an initial value as the counting operation is performed, and the initial value is set by an external memory controller.

Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including alternating gate electrodes and insulating layers stacked along a first direction, a vertical opening through the stack structure along the first direction, the vertical opening including a channel structure having a semiconductor layer on an inner sidewall of the vertical opening, and a variable resistive material on the semiconductor layer, a vacancy concentration in the variable resistive material varies along its width to have a higher concentration closer to a center of the channel structure than to the semiconductor layer, and an impurity region on the substrate, the semiconductor layer contacting the impurity region at a bottom of the channel structure.

Abstract: The present invention is related to a method for fabricating a semiconductor device capable of forming fine patterns. The method for fabricating the semiconductor device according to the present invention may comprise forming an etch mask layer on an etch target layer; forming a spacer structure in which first spacers and second spacers are alternately disposed and spaced apart from each other on the etch mask layer; forming first spacer lines through selective etching of the first spacers; forming second spacer lines through selective etching of the second spacers; and etching the etch target layer to form a plurality of fine line patterns using the first and second spacer lines.

Abstract: The disclosure generally relates to techniques for efficiently allocating resources allocated from a macro base station by estimating the communication possibility of each sensor without direct communication with the sensor in a mobile base station. A method for resource allocation in a mobile base station may include detecting at least one sensor within a communicable range of the mobile base station, estimating a communication possibility of the sensor based on a message queue and a remaining battery level of the at least one sensor, receiving resource allocation from a macro base station based on the communication possibility, and allocating the allocated resource to the sensor.