Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including alternating gate electrodes and insulating layers stacked along a first direction, a vertical opening through the stack structure along the first direction, the vertical opening including a channel structure having a semiconductor layer on an inner sidewall of the vertical opening, and a variable resistive material on the semiconductor layer, a vacancy concentration in the variable resistive material varies along its width to have a higher concentration closer to a center of the channel structure than to the semiconductor layer, and an impurity region on the substrate, the semiconductor layer contacting the impurity region at a bottom of the channel structure.

Abstract: A controller (e.g., a remote control) stores channel information preferred by the user or program information preferred by the user. The controller recognizes the user by detecting the user's fingerprint, and controls the display device or a set-top box that communicates with the display device such that a list corresponding to the recognized channel information preference or a list corresponding to program information is displayed on the display device.

Abstract: The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A user equipment in a communication system, according to various embodiments of the present disclosure, includes: a controller that determines at least one communication service to deactivate among communication services that are able to be provided and a transmitter that transmits, to a server, a message for identifying the at least one communication service to deactivate.

Abstract: An organic optoelectronic device and a display device including the same, the organic optoelectronic device including: an anode and a cathode facing each other; a light-emitting layer positioned between the anode and the cathode; a hole transport layer positioned between the anode and the light-emitting layer; an auxiliary hole transport layer positioned between the hole transport layer and the light-emitting layer; an electron transport layer positioned between the cathode and the light-emitting layer; and an auxiliary electron transport layer positioned between the electron transport layer and the light-emitting layer, wherein the auxiliary electron transport layer includes at least one kind of first compound represented by chemical formula 1, and the auxiliary hole transport layer includes at least one kind of second compound represented by a combination of a moiety represented by chemical formula 2, a moiety represented by chemical formula 3 and a moiety represented by chemical formula 4.

Abstract: A flexible semiconductor package includes a semiconductor chip accommodated in a cavity formed in a substrate, a molding layer covering an entire upper surface of the substrate and the cavity, and a wiring portion including an insulating layer and a redistribution member provided under lower surfaces of the substrate and the semiconductor chip, wherein the molding layer includes a pre-preg in which a resin is impregnated with a glass fabric, and the molding layer and the insulating layer are attached to the semiconductor chip accommodated in the cavity by a roll-to-roll continuous process.

Abstract: The present specification provides a cardo-based binder resin represented by Chemical Formula 1, and a photosensitive resin composition, a black matrix, a color filter and a display apparatus including the same.

Abstract: A memory device includes a voltage generator that provides a read voltage to a selected word line and provides a pass voltage to a plurality of unselected word lines, and a deterioration level detection circuit. The selected word line and the unselected word lines are connected to a plurality of memory cells. The deterioration level detection circuit detects a deterioration level of memory cells connected to the selected word line based on data of memory cells that receive the read voltage. The memory cells connected to the selected word line and the memory cells that receive the read voltage are included in the plurality of memory cells. The voltage generator changes the pass voltage provided to the unselected word lines based on the deterioration level.

Abstract: An electronic apparatus includes a display module including a display area through which an image is displayed and a non-display area adjacent to the display area and provided with a through hole through which a signal is transmitted, which is defined in the display area, an electronic module disposed under the display module, overlapping the through hole, and transmitting or receiving the signal, and an antenna module disposed on the display module and including a first portion through which an opening corresponding to the through hole is defined and a second portion extending from the first portion and inserted into the through hole.

Abstract: A semiconductor device includes a first interlayer insulating film on a substrate, a via which penetrates the first interlayer insulating film, a first etching stop film which extends along an upper surface of the first interlayer insulating film, a second interlayer insulating film on the first etching stop film, the second interlayer insulating film including a plurality of periodically arranged air gaps, a first wiring pattern in the second interlayer insulating film, the first wiring pattern penetrating the first etching stop film and is connected to the via, and a capping film which covers an upper surface of the second interlayer insulating film and an upper surface of the first wiring pattern, each of the plurality of air gaps in the second interlayer insulating film extending from the first etching stop film to the capping film.

Abstract: Pharmaceutical compositions comprising at least one active pharmaceutical ingredient or a pharmaceutically acceptable salt thereof, at least one hydrophilic plastomer, at least one hydrophilic elastomer, and at least one deliquescent plasticizer, wherein the pharmaceutical compositions provide extended release of the API and have abuse deterrent properties. Methods for preparing the pharmaceutical compositions in which the components of the composition are humidified such that the deliquescent plasticizer deliquesces, thereby plasticizing the hydrophilic polymers.

Abstract: An array substrate and a display apparatus including the array substrate are provided. The array substrate includes a substrate divided into a display area and a peripheral area adjacent to the display area. A pixel array is formed on the substrate corresponding to the display area and receives a driving signal. A driving circuit includes a plurality of stages and is formed on the substrate corresponding to the peripheral area. Each of the stages includes a first transistor having a source electrode connected to an output terminal to output the driving signal, a channel layer formed between a gate insulating layer and the source electrode, the channel layer having an opening to facilitate contact between a portion of the gate insulating layer and the source electrode, and a capacitor defined by a gate electrode of the first transistor, the source electrode, and the gate insulating layer contacting the source electrode.

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate including a cell region, a core region, and a boundary region between the cell region and the core region, a boundary element isolation layer in the boundary region of the substrate to separate the cell region from the core region, a high-k dielectric layer on at least a part of the boundary element isolation layer and the core region of the substrate, a first work function metal pattern comprising a first extension overlapping the boundary element isolation layer on the high-k dielectric layer, and a second work function metal pattern comprising a second extension overlapping the boundary element isolation layer on the first work function metal pattern, wherein a first length of the first extension is different from a second length of the second extension.

Abstract: Provided are a non-volatile memory device and an erasing method thereof.

Abstract: The present invention relates to: an oil-in-water emulsion composition having a viscosity of 1,500-50,000 cps, and comprising an anionic surfactant and a sugar surfactant so as to satisfy the following relational expression 1; and a cosmetic composition containing the same. [Relational expression 1] 0.01?A/B?1 (In relational expression 1, A is the wt % of the anionic surfactant, and B is the wt % of the sugar surfactant, wherein the wt % of each ingredient is based on the total weight of the composition, and B is 1-30 wt %.

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

Abstract: A pharmaceutical composition comprising at least one active pharmaceutical ingredient (API) or a pharmaceutically acceptable salt thereof, a glucomannan, a first polyalkylene oxide having an average molecular weight of no more than 300,000, and a second polyalkylene oxide having an average molecular weight of at least 1,000,000 and methods of making. The pharmaceutical composition provides extended release of the API and has abuse deterrent features.

Abstract: A memory device includes an array of vertical NAND strings of nonvolatile memory cells, on an underlying substrate. An erase control circuit is provided, which is configured to drive a plurality of bit lines electrically coupled to the array of vertical NAND strings of nonvolatile memory cells with respective erase voltages having unequal magnitudes during an operation to erase the nonvolatile memory cells in the array of vertical NAND strings. This erase control circuit may also be configured to drive a first of the plurality of bit lines with a first erase voltage for a first duration and drive a second of the plurality of bit lines with a second erase voltage for a second duration unequal to the first duration during the operation to erase the nonvolatile memory cells in the array of vertical NAND strings.

Abstract: A touch display panel for improving product yield and product reliability and reducing manufacturing cost includes a touch sensor unit disposed on an encapsulation unit, the touch sensor unit including a plurality of touch sensors corresponding to an active area and a touch passivation layer on the plurality of touch sensors, and an antireflection unit disposed on the touch sensor unit, the antireflection unit at least including a black matrix disposed in non-emissive areas of the active area and a bezel area, wherein the antireflection unit and the touch passivation layer overlap the active area and the bezel area and do not overlap at least a pad area of the bezel area, and, in the bezel area, the overlapping area of the antireflection unit is equal to the overlapping area of the touch passivation layer.

Abstract: An organic light emitting display device includes a substrate, a pixel structure, and a touch sensor electrode. The substrate includes a sub-pixel region and a transparent region. The pixel structure is disposed in the sub-pixel region on the substrate. The touch sensor electrode is disposed in the transparent region on the substrate.

Abstract: The present disclosure discloses an anti-reflection coating and a method of forming the same. According to one embodiment of the present disclosure, the anti-reflection coating includes a first layer positioned on a substrate to be spaced apart from the substrate by a first distance and a second layer positioned on the first layer to be spaced apart from the first layer by a second distance. In this case, the first and second layers are a metamaterial forming a structural double layer and are realized as an anomalous dispersive medium that does not absorb incident light. The structural double layer may realize spatiotemporal dispersion that varies depending on an incidence angle using the nonlocality of the electromagnetic wave reaction of incident light.