Abstract: The present invention is related to an organic electrolytic solution comprising a halogenated benzene compound, such as 1-iodobenzene or 1-chlorobenzene. Specifically, the halogenated benzene compound has a high polarity and is capable of reducing the reactivity of the lithium metal surface. Due to these characteristics of the halogenated benzene compound, the lithium ions are unlikely to bond with the sulfide anions. Therefore, the solubility of the sulfide within the electrolyte is increased, thereby improving the charge/discharge efficiency characteristics of the lithium ions and the lifespan of batteries. Moreover, the organic electrolytic solution of the present invention may be used in any battery type where an anode is composed of lithium metal, and in particular, lithium sulfur batteries.

Abstract: An EEPROM includes a device isolation layer for defining a plurality of active regions, a pair of control gates extending across the active regions and a pair of selection gates patterns that extend across the active regions and are interposed between the control gate patterns. A floating gate pattern is formed on intersection regions where the control gate patterns extend across the active regions. A lower gate pattern is formed on intersection regions where the selection gate patterns extend across the active regions. An inter-gate dielectric pattern is disposed between the control gate pattern and the floating gate pattern and a dummy dielectric pattern is disposed between the selection gate pattern and the lower gate pattern. The dummy dielectric pattern is substantially parallel to the selection gate pattern, and self-aligned with one sidewall of the selection gate pattern to overlap a predetermine width of the selection gate pattern.

Abstract: An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.

Abstract: A trench isolation region can be formed in a device substrate by planarizing a first insulation layer in a trench of a substrate using chemical mechanical polishing so that the first insulation layer is removed from a surface of the substrate outside the trench and remains inside the trench, thereby forming an opening to a void beneath a surface of the first insulation layer. A further portion of the first insulation layer can be removed from inside the trench using a wet etch or a dry etch process to increase the opening to the void. A second insulation layer can be deposited in the void in the first insulation layer through the increased opening.

Abstract: An organic electrolytic solution includes a lithium salt and an organic solvent containing a phosphonate compound, and a lithium battery utilizes the organic electrolytic solution. When using the organic electrolyte containing the phosphonate compound to manufacture a lithium secondary battery, the lithium secondary battery has improved stability to reduction-induced decomposition, reduced first cycle irreversible capacity, and improved charging/discharging efficiency and lifespan. In addition, the lithium secondary battery does not swell beyond a predetermined thickness range after formation and standard charging at room temperature and has improved reliability. Even when the lithium secondary battery swells seriously at a high temperature, its capacity is high enough for practical applications. The capacity of the lithium secondary battery may substantially be recovered after being left at a high temperature.

Abstract: Methods of forming a semiconductor device are provided by forming a gate pattern that includes a gate electrode on a substrate. Lightly doped impurity diffusion layers are formed in the substrate at both sides of the gate pattern. Spacers are formed on sidewalls of the gate pattern. The spacers having a bottom width. Impurity ions are implanted using the gate pattern and the spacer as a mask to form a heavily doped impurity diffusion layer in the substrate. The spacers are removed. A conformal etch stop layer is formed on the gate pattern and the substrate. The etch stop layer is formed to a thickness of at least the bottom width of the spacers.

Abstract: A two-way orifice check valve device for a hydraulic circuit is disclosed. The hydraulic circuit which controls the engagement and release of a friction element, such as a clutch, is simplified to reduce the manufacturing cost, as well as improve functioning during the engagement and release of the friction element.

Abstract: A semiconductor device includes a substrate of a first conductive type, and a well region of an opposite second conductive type is formed in the substrate. A first impurity region of the first conductive type extends to a first depth within the well region, and a second impurity region of the first conductive type is spaced from the first impurity region to define a channel region therebetween and extends to a second depth within the well region. Preferably, the second depth is greater than the first depth. A gate electrode is located over the channel region, and a silicide layer is formed at a third depth within the first impurity region. The third depth is less than the first depth, and a difference between the first depth and the third depth is less than or equal to a difference at which a leakage current from the silicide layer to the well region is sufficient to electrically bias the well region through the silicide layer.

Abstract: The present invention relates to extract and fraction of cacao bean and cacao bean husk, which inhibit the suppression of GJIC (gap junctional intercellular communication) and inhibit DNA synthesis of cancer cell, pathological phenomena occurring during promotion and progression stages of carcinogenesis.

Abstract: Disclosed is theobromine with an anti-carcinogenic activity which inhibits the suppression of GJIC (gap junctional intercellular communication), a pathological phenomenon occurring during development of various kinds of cancers including liver cancer, as well as DNA synthesis of cancer cells thereby inhibiting proliferation of liver, gastric and colon cancer cells.

Abstract: A two-way orifice check valve device for a hydraulic circuit is disclosed. The hydraulic circuit which controls the engagement and release of a friction element, such as a clutch, is simplified to reduce the manufacturing cost, as well as improve functioning during the engagement and release of the friction element.

Abstract: The present invention relates to extract and fraction of cacao bean and cacao bean husk, which inhibit the suppression of GJIC (gap junctional intercellular communication) and inhibit DNA synthesis of cancer cell, pathological phenomena occurring during promotion and progression stages of carcinogenesis.

Abstract: A semiconductor memory device comprises a semiconductor substrate having a memory cell region and a periphery circuit region. The memory cell region includes first and second conductivity type wells and an array of memory cell formed on the first and second conductivity type wells. The periphery circuit region comprises a guard ring that is formed at a location next to a second conductivity type well and to surround a side portion of the array of memory cells. The guard ring is formed with a depth different from that of the second conductivity type well.

Abstract: Disclosed is theobromine with an anti-carcinogenic activity which inhibits the suppression of GJIC (gap junctional intercellular communication), a pathological phenomenon occurring during development of various kinds of cancers including liver cancer, as well as DNA synthesis of cancer cells thereby inhibiting proliferation of liver, gastric and colon cancer cells.

Abstract: A method of fabricating a semiconductor device is provided. In this method, a gate insulating layer and a gate are sequentially formed on a semiconductor substrate of a first conductivity type. A first active region of a second conductivity type is formed by ion-implanting a first impurity of the second conductivity type at a first dose, using the gate as a mask. Sidewall spacers are formed of an insulating material on the sidewalls of the gate. A second active region of the second conductivity type is formed by masking a narrow region between gates and ion-implanting a second impurity of the second conductivity type at a second dose higher than the first dose. Finally, a silicide layer is formed on the exposed first and second active regions and gate. There exist no impurities in excess of their solid solubility limit, which could block the diffusion of silicon in the narrow region. As a result, a reliable silicidation is ensured.

Abstract: A remote controller includes a main body where a plurality of accommodation portions are provided, at least one selection button accommodated in one of the accommodation portions to be capable of being replaceable, an ID determination portion which determines an ID assigned to the selection button, and a signal generating portion which generates a remote control signal corresponding to the ID determined by the ID determination portion according to operation of the selection button. Thus, since a user can freely arrange buttons at desired positions, a remote controller can be configured suitable for the taste of the user. Also, the remote controller is flexible to addition or removal of functions of electronic apparatuses to be controlled.

Abstract: A power semiconductor device having a trench gate structure in which it is possible to reduce the number of required masks and to improve its characteristics, and a method for manufacturing the same, includes a semiconductor substrate and a semiconductor region of a first conductive type formed on the semiconductor substrate. A source region of a second conductive type is formed on the semiconductor region. A trench is formed to pass through the source region and the semiconductor region of the first conductive layer. A first conductive layer formed to be insulated from the semiconductor substrate by interposing a gate insulating film, and a gate formed of a second conductive layer surrounded by the first conductive layer are formed in the trench. An interlayer dielectric film is formed on the semiconductor substrate. A gate electrode is formed connected to the gate through a contact hole formed in the interlayer dielectric film.

Abstract: A semiconductor device includes a substrate of a first conductive type, and a well region of an opposite second conductive type is formed in the substrate. A first impurity region of the first conductive type extends to a first depth within the well region, and a second impurity region of the first conductive type is spaced from the first impurity region to define a channel region therebetween and extends to a second depth within the well region. Preferably, the second depth is greater than the first depth. A gate electrode is located over the channel region, and a silicide layer is formed at a third depth within the first impurity region. The third depth is less than the first depth, and a difference between the first depth and the third depth is less than or equal to a difference at which a leakage current from the silicide layer to the well region is sufficient to electrically bias the well region through the silicide layer.

Abstract: A semiconductor memory device comprises a semiconductor substrate having a memory cell region and a periphery circuit region. The memory cell region includes first and second conductivity type wells and an array of memory cell formed on the first and second conductivity type wells. The periphery circuit region comprises a guard ring that is formed at a location next to a second conductivity type well and to surround a side portion of the array of memory cells. The guard ring is formed with a depth different from that of the second conductivity type well.

Abstract: A method for producing a cellular vaccine against any cancer is provided. The cancer cells transformed with an expression co-expressing modified interleukin-12 and a co-stimulatory molecule provides an effective means of cancer treatment since the cells can display characteristics of both cancer cells and antigen-presenting cells.