Abstract: An inkjet composition for a transparent film includes a) a binder polymer, b) a polymerizable monomer, c) a polymerization initiator, and d) a solvent having a boiling point of 150° C. or more. Using the inkjet composition according to the embodiments of the present invention, the transparent film may be directly manufactured at a desired position by using the inkjet process, while using a small amount of ink, thereby increasing the efficiency of the manufacturing process. Also, due to the excellent jetting properties thereof, it is advantageous to forming the transparent film. Furthermore, the excellent transmittance and heat resistance may be obtained.

Abstract: A system for processing three dimensional (3D) distribution image of a radiation source and a processing method using the same are provided. The system includes an image measuring unit comprising a plurality of position sensitive detectors to measure the radiation source, a signal amplifying unit which receives signals from the image measuring unit and amplifies the received signals into an electric signal, a mode selecting unit that receives the electric signal and selects a detection mode and outputs a corresponding mode signal, a data storage unit which stores the signals as a series of items, a data converting unit which converts the data stored at the data storage unit into interactive data, an image reconstructing unit which reconstructs the converted data into the 3D distribution image, and a display unit which displays the 3D distribution image received from the reconstructing unit.

Abstract: A tooth whitener is provided, including a water-in-oil (W/O) emulsion phase including: a discontinuous phase comprising a peroxide, a hydrophilic solvent, and a polyol, and a continuous phase comprising a glycerol monooleate, a polymer and a polyol, wherein the tooth whitener is flowable upon being applied to teeth and is solidified by the action of moisture after being applied to teeth, and then is adhered and fixed to teeth, and wherein the glycerol monooleate is in an amount of 15% to 95% by weight, based on total weight of the tooth whitener composition.

Abstract: A stack-type semiconductor device and a method of manufacturing the same are provided. The stack-type semiconductor device includes an insulation layer on a single-crystalline substrate, a contact plug penetrating the insulation layer to contact the single-crystalline substrate, an upper semiconductor pattern including an impurity region and a gate structure positioned between the impurity regions on the upper semiconductor pattern. An upper surface of the contact plug contacts a lower surface of the semiconductor pattern. An operation failure of the stack-type semiconductor device is reduced since the upper semiconductor pattern is electrically connected to the single-crystalline semiconductor substrate.

Abstract: There are disclosed a method for managing a pollution prevention facility and a system for effectively managing the pollution prevention facility which can exhaust pollutants, and a system thereof. A method for managing a pollution prevention facility includes a first measuring step of measuring pollutants before a pollution prevention facility treats a pollutant outlet; a second measuring step of measuring the amount of pollutants after the pollution prevention facility treats the pollutant outlet; and a managing step of managing an exchange period of a filling material provided in the pollution prevention facility.

Abstract: A vertical memory device includes a channel, a ground selection line (GSL), word lines and a string selection line (SSL). The channel extends in a first direction substantially perpendicular to a top surface of a substrate, and a thickness of the channel is different according to height. The GSL, the word lines and the SSL are sequentially formed on a sidewall of the channel in the first direction and spaced apart from each other.

Abstract: A method of manufacturing a three-dimensional semiconductor memory device comprises forming a thin layer structure by alternately stacking first and second material layers on a substrate, forming a penetration dent penetrating the thin layer structure and exposing a top surface of the substrate recessed by the penetration dent, forming a vertical insulation layer penetrating the thin layer structure to cover an inner wall of the penetration dent, forming a semiconductor pattern penetrating the vertical insulation layer at the penetration dent to be inserted into the substrate, and forming an oxide layer between the thin layer structure and the substrate by oxidizing a sidewall of the penetration dent.

Abstract: Disclosed is a multifunctional urethane monomer prepared by reacting (a) an epoxy compound having two or more epoxy groups, (b) a diol compound having an acidic group and (c) a compound having an ethylenically unsaturated group and an isocyanate group with one another. The photosensitive resin composition comprising the multifunctional urethane monomer has low viscosity, superior sensitivity, excellent chemical resistance and heat-resistance and high development margin.

Abstract: A semiconductor device includes a semiconductor pattern on a substrate, gate structures on sidewalls of the semiconductor pattern, the gate structures being spaced apart from one another, insulating interlayers among the gate structures, wherein an uppermost insulating interlayer is lower than an upper face of the semiconductor pattern, a common source line contacting the substrate and protruding above the uppermost insulating interlayer, an etch stop layer pattern on the semiconductor pattern and on the common source line wherein the common source line protrudes above the uppermost insulating interlayer, an additional insulating interlayer on the uppermost insulating interlayer, and contact plugs extending through the additional insulating interlayer so as to make contact with the semiconductor pattern and the common source line, respectively.

Abstract: Provided is an ink composition for manufacturing color filters. The ink composition includes an acrylic binder resin obtained by polymerizing the group of monomers containing a compound represented by Formula 1. The ink composition has good chemical resistance and adhesive properties and is used for manufacturing color filters exhibiting a high contrast ratio: (where Ra is —H, or —CH3, and Rb is an alkyl group having 6-30 carbon atoms).

Abstract: A method of fabricating a non-volatile memory device according to an example embodiment may include etching a plurality of sacrificial films and insulation films to form a plurality of first openings that expose a plurality of first portions of a semiconductor substrate. A plurality of channel layers may be formed in the plurality of first openings so as to coat the plurality of first portions of the semiconductor substrate and side surfaces of the plurality of first openings. A plurality of insulation pillars may be formed on the plurality of channel layers so as to fill the plurality of first openings. The plurality of sacrificial films and insulation films may be further etched to form a plurality of second openings that expose a plurality of second portions of the semiconductor substrate. A plurality of side openings may be formed by removing the plurality of sacrificial films. A plurality of gate dielectric films may be formed on surfaces of the plurality of side openings.

Abstract: A heat-curable ink composition and a color filter produced using the ink composition are provided. The ink composition and the color filter are highly resistant to heat and chemicals due to the use of a polyester resin prepared by polycondensation. In addition, unreacted anhydride groups are removed using a monohydric alcohol in the preparation of the ink composition to make the ink composition and the color filter very stable during storage.

Abstract: A radiation detecting device is provided, according to which it is possible use only one radiation detecting device to measure radiation and measure gamma ray and neutron at once and discriminately in a restricted space. The radiation detecting device includes a radiation detecting unit to measure gamma ray and neutron discriminately at once, and a signal processing circuit which applies voltage to the neutron detecting unit and indicates measured gamma ray and neutron discriminately.

Abstract: A vertical structure non-volatile memory device includes semiconductor regions that vertically extend on a substrate, a plurality of memory cell strings that vertically extend on the substrate along sidewalls of the semiconductor regions and include a plurality of memory cells and at least one or more first selection transistors, which are disposed on sides of the memory cells and are adjacent to one another. A plurality of wordlines is connected to the memory cells of the memory cell strings. A first selection line is connected to the selection transistors of the memory cell strings and insulating regions are formed as air gaps between the first selection transistors of the adjacent memory cell strings.

Abstract: Provided are an alkali soluble binder resin that includes a monomer including an unsaturated double bond, an unsaturated double bond character monomer including a carboxylic acid and an unsaturated double bond character monomer including an allyl group as a repeating unit, in which a molecular weight distribution (Mw/Mn) is in a range of about 2.0 to about 3.5, and a negative-type photosensitive resin composition including the alkali soluble binder resin. Re-solubility, fine-patterned substrate adhesion and dispersion stability may be improved by including the alkali soluble binder resin according to the present invention.

Abstract: A semiconductor memory device includes: a semiconductor region extending vertically from a first region of a substrate; a plurality of gate electrodes disposed on the first region of the substrate in a vertical direction, but separated from each other along a sidewall of the semiconductor region; a gate dielectric layer disposed between the semiconductor region and the plurality of gate electrodes; a substrate contact electrode extending vertically from the impurity-doped second region of the substrate; and an insulating region formed as an air gap between the substrate contact electrode and at least one of the plurality of gate electrodes.

Abstract: On embodiment of a contact structure may include a lower insulation layer on a lower substrate, an upper substrate on the lower insulation layer, a groove penetrating the upper substrate to extend into the lower insulation layer, the groove below an interface between the upper substrate and the lower insulation layer, an upper insulation layer in the groove, and a contact plug penetrating the upper insulation layer in the groove to extend into the lower insulation layer.

Abstract: Provided is a non-volatile memory device including first and second, vertically stacked semiconductor substrates, a plurality of non-volatile memory cell transistors formed in a row on the first and second semiconductor substrates, and a plurality of word lines connected to gates of the plurality of non-volatile memory cell transistors. The plurality of non-volatile memory cell transistors are grouped into two or more memory cell blocks, such that a first voltage is applied to the first semiconductor substrate including a first memory cell block to be erased, and either (1) a second voltage less than the first voltage and greater than 0V is applied to the second semiconductor substrate not including the first memory cell block, or (2) the second semiconductor substrate not including the first memory cell block is allowed to electrically float.

Abstract: A non-volatile memory device includes first and second strings memory cell transistors, related first and second word lines respectively connected to gates of the first string memory cell transistors, wherein respective first and second word lines are connected to commonly receive a bias voltage. The non-volatile memory device also includes dummy cell transistors connected to the first and second strings, and first and second dummy word lines configured to receive different bias voltages.

Abstract: A memory device having a vertical channel structure is disclosed. The memory device includes a plurality of gate lines extending substantially parallel to one another along a surface of a substrate, and a connection unit electrically connecting the plurality of gate lines. The connection unit includes a first portion laterally extending along the surface of the substrate, a second portion extending substantially perpendicular to the surface of the substrate, and a supporting insulating layer extending in a cavity defined by the first and second portions of the connection unit. Related fabrication methods are also discussed.