Patents by Inventor Han-soo Kim

Han-soo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130063430
    Abstract: An apparatus for generating depth information includes: a receiver which receives a two-dimensional (2D) image signal including a plurality of frames; a user input unit; a user interface (UI) generator which generates a tool UI to input guide information for generating depth information; a display unit which displays a frame for which depth information is generated among the plurality of frames, and the generated tool UI; and a depth information generator which generates depth information corresponding to the guide information input by the user input unit through the tool UI.
    Type: Application
    Filed: September 10, 2012
    Publication date: March 14, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Oh-jae KWON, Ji-bum MOON, Han-soo KIM, Young-wook SOHN, Seo-young KIM
  • Publication number: 20130057647
    Abstract: Disclosed are an apparatus and method for converting 2D video contents into 3D video contents. The method includes: displaying a first work user interface (UI) relating to at least one item for converting 2D contents into 3D contents; by a first worker, determining a working direction relating to performing a conversion upon the at least one item by using the first work UI; displaying a second work UI showing the working direction determined by the first worker; and by a second worker, executing the working direction upon the at least one item by the second work UI. Accordingly, when a plurality of workers performs one or more 2D-3D conversions, work efficiency is improved, and good communication between workers is enabled.
    Type: Application
    Filed: August 24, 2012
    Publication date: March 7, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji-bum MOON, Han-soo KIM, Won-seok AHN, Seung-hoon HAN, Kyu-yong KIM
  • Publication number: 20130044545
    Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
    Type: Application
    Filed: October 23, 2012
    Publication date: February 21, 2013
    Inventors: Jae-hun Jeong, Han-soo Kim, Won-seok Cho, Jae-hoon Jang, Sun-il Shim
  • Publication number: 20130034814
    Abstract: The present application relates to a new silane-based compound, a photosensitive resin composition including the same, and a photosensitive material including the same. The photosensitive resin composition including the silane-based compound according to the exemplary embodiment of the present application increases adhesion strength to a substrate, such that a developing property is excellent and there are no surface stains or defects during a subsequent process. Accordingly, a photosensitive material, a color filter and the like having excellent quality may be manufactured by using the photosensitive resin composition according to the exemplary embodiment of the present application.
    Type: Application
    Filed: August 3, 2012
    Publication date: February 7, 2013
    Applicant: LG CHEM, LTD.
    Inventors: Changho CHO, Yoon Hee HEO, Sunghyun KIM, Han Soo KIM, Sunhwa KIM, Won Jin CHUNG
  • Publication number: 20130030077
    Abstract: The present invention relates to a polymer having a novel structure and a photosensitive resin composition comprising the same. A photosensitive resin composition comprising a polymer according to the present invention has a high taper angle and excellent adhesion strength. Accordingly, the photosensitive resin composition comprising the polymer according to the present invention may be applied to various photosensitive materials, and particularly, may be preferably applied when a color filter pattern for LCD is manufactured.
    Type: Application
    Filed: April 20, 2012
    Publication date: January 31, 2013
    Applicant: LG CHEM, LTD.
    Inventors: Sunhwa Kim, Ho Chan JI, Dongchang Choi, Han Soo Kim, Yoon Hee Heo, Changho Cho, Won Jin Chung
  • Patent number: 8357483
    Abstract: The present invention relates to a photosensitive resin composition that includes a polymer prepared by using a macromonomer as an alkali soluble resin. The photosensitive resin composition is used for various types of purposes such as a photoresist for preparing a color filter, an overcoat photoresist, a column spacer, and an insulating material having a light blocking property, and improves physical properties such as residue or not, chemical resistance, and heat resistance of the photoresist.
    Type: Grant
    Filed: April 11, 2008
    Date of Patent: January 22, 2013
    Assignee: LG Chem, Ltd.
    Inventors: Han-Soo Kim, Min-Young Lim, Yoon-Hee Heo, Ji-Heum Yoo, Sung-Hyun Kim, Kwang-Han Park
  • Patent number: 8343812
    Abstract: On embodiment of a contact structure may include a lower insulation layer on a lower substrate, an upper substrate on the lower insulation layer, a groove penetrating the upper substrate to extend into the lower insulation layer, the groove below an interface between the upper substrate and the lower insulation layer, an upper insulation layer in the groove, and a contact plug penetrating the upper insulation layer in the groove to extend into the lower insulation layer.
    Type: Grant
    Filed: August 5, 2011
    Date of Patent: January 1, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min-Sung Song, Soon-Moon Jung, Han-Soo Kim, Young-Seop Rah, Won-Seok Cho, Yang-Soo Son, Jong-Hyuk Kim, Young-Chul Jang
  • Patent number: 8338559
    Abstract: The present invention relates to a fluorene-based resin polymer having a repeating unit of Formula 1 and a method for preparing the same. The fluorene-based resin polymer has a high molecular weight and low acid value, and has an excellent developing property, adhesive property, and stability.
    Type: Grant
    Filed: January 21, 2008
    Date of Patent: December 25, 2012
    Assignee: LG Chem, Ltd.
    Inventors: Yoon-Hee Heo, Kyung-Soo Choi, Han-Soo Kim, Min-Young Lim, Ji-Heum Yoo
  • Publication number: 20120313123
    Abstract: A display device includes a first substrate having a plurality of pixel regions separated by a non-pixel region; a second substrate facing the first substrate; and a spacer disposed between the first substrate and the second substrate to maintain a gap between the first substrate and the second substrate. The pixel regions include a first pixel region and a second pixel region which neighbor each other, the non-pixel region between the first pixel region and the second pixel region is bisected into a first non-pixel region adjacent to the first pixel region and a second non-pixel region adjacent to the second pixel region, and the spacer is formed on the non-pixel region between the first pixel region and the second pixel region. An area of the first non-pixel region occupied by the spacer is smaller than an area of the second non-pixel region occupied by the spacer.
    Type: Application
    Filed: April 19, 2012
    Publication date: December 13, 2012
    Applicant: SAMSUNG MOBILE DISPLAY CO., LTD.
    Inventor: Han-Soo Kim
  • Patent number: 8324675
    Abstract: A flash memory device having a vertical channel structure. The flash memory device includes a substrate having a surface that extends in a first direction, a channel region having a pillar shape and extending from the substrate in a second direction that is perpendicular to the first direction, a gate dielectric layer formed around the channel region, a memory cell string comprising a plurality of transistors sequentially formed around the channel region in the second direction, wherein the gate dielectric layer is disposed between the plurality of transistors and the channel region, and a bit line connected to one of the plurality of transistors, and surrounding a side wall and an upper surface of one end of the channel region so as to directly contact the channel region.
    Type: Grant
    Filed: December 22, 2009
    Date of Patent: December 4, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hui-chang Moon, Han-soo Kim, Won-seok Cho, Jae-hoon Jang, Ki-hyun Kim
  • Patent number: 8323533
    Abstract: The present invention relates to a composition for preparing a curable resin, comprising a) a compound represented by Formula 1; b) glycidyl (meth)acrylate; c) acid monoanhydride; and d) a solvent, a curable resin manufactured by the composition, and an ink composition comprising the same. The curable resin has a low viscosity and excellent flow properties, and the ink composition is excellent in terms of storage stability, heat resistance and chemical resistance.
    Type: Grant
    Filed: April 11, 2008
    Date of Patent: December 4, 2012
    Assignee: LG Chem, Ltd.
    Inventors: Min-Young Lim, Jae-Joon Kim, Mi-Ae Kim, Dae-Hyun Kim, Han-Soo Kim, Yoon-Hee Heo, Ji-Heum Yoo, Sung-Hyun Kim
  • Patent number: 8304169
    Abstract: The present invention relates to a novel alkali-developable resin, a method of producing the alkali-developable resin, a photosensitive resin composition including the alkali-developable resin, and a device that is manufactured by using the photosensitive composition. In the case of when the alkali-developable resin is used as a component of the photosensitive composition, the photosensitivity, the developability and the film remaining rate of the pattern are improved.
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: November 6, 2012
    Assignee: LG Chem, Ltd.
    Inventors: Min-Young Lim, Han-Soo Kim, Yoon-Hee Heo, Ji-Heum Yoo, Sung-Hyun Kim
  • Patent number: 8295089
    Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
    Type: Grant
    Filed: February 2, 2010
    Date of Patent: October 23, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-hun Jeong, Han-soo Kim, Won-seok Cho, Jae-hoon Jang, Sun-il Shim
  • Patent number: 8277698
    Abstract: The present invention relates to an infrared curable ink composition for a color filter. The ink composition according to the present invention includes a melamine compound and an epoxy compound, and thus can be cured for a short time, thereby being used in the infrared curing process, and reducing the production process and time required for the color filter production. In addition, the color filter produced by the ink composition according to the present invention has excellent chemical resistance and heat resistance, thereby being applied to various electronic devices such as liquid crystal display device.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: October 2, 2012
    Assignee: LG Chem, Ltd.
    Inventors: Mi-Kyoung Kim, Sun-Hwa Kim, Han-Soo Kim, Dae-Hyun Kim
  • Patent number: 8258517
    Abstract: One embodiment exemplarily described herein can be generally characterized as a semiconductor device that includes a lower level device layer located over a semiconductor substrate, an interlayer insulating film located over the lower level device layer and an upper level device layer located over the interlayer insulating film. The lower level device layer may include a plurality of devices formed in the substrate. The upper level device layer may include a plurality of semiconductor patterns and at least one device formed in each of the plurality of semiconductor patterns. The plurality of semiconductor patterns may be electrically isolated from each other. Each of the plurality of semiconductor patterns may include at least one active portion and at least one body contact portion electrically connected to the at least one active portion.
    Type: Grant
    Filed: May 27, 2009
    Date of Patent: September 4, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-In Yun, Soon-Moon Jung, Han-Soo Kim, Hoo-Sung Cho, Jun-Beom Park, Jae-Hun Jeong
  • Patent number: 8252879
    Abstract: Provided are a photosensitive resin and a photosensitive resin composition comprising the photosensitive resin. The photosensitive resin has the structure of Formula 1, which is described in the specification. The photosensitive resin and the photosensitive resin composition have good sensitivity, improved resistance to heat and chemicals, and excellent storage stability. Further provided are a method for preparing the photosensitive resin and a cured product of the photosensitive resin composition.
    Type: Grant
    Filed: August 20, 2008
    Date of Patent: August 28, 2012
    Assignee: LG Chem, Ltd.
    Inventors: Han Soo Kim, Min Young Lim, Sung Hyun Kim, Yoon Hee Heo, Dae Hyun Kim, Ji Heum Yoo, Sun Hwa Kim
  • Publication number: 20120208930
    Abstract: The present invention relates to an inkjet composition for forming transparent films, which is highly economical and environmentally friendly and has excellent physical properties, including excellent transmittance, chemical resistance, heat resistance, adhesion, jetting stability and storage stability.
    Type: Application
    Filed: October 22, 2010
    Publication date: August 16, 2012
    Inventors: Mun-Ho Kim, Seung-Hee Lee, Han-Soo Kim, Mi-Kyoung Kim
  • Publication number: 20120196949
    Abstract: The present invention relates to a fluorene-based resin polymer, and a photosensitive resin composition including the same, and the fluorene-based resin polymer according to the exemplary embodiment of the present invention has a high molecular weight, a low acid value, and excellent developing property, adhesive property and stability.
    Type: Application
    Filed: January 27, 2012
    Publication date: August 2, 2012
    Applicant: LG CHEM, LTD.
    Inventors: Yoon Hee HEO, Kwang Han PARK, Han Soo KIM, Changho CHO, Sunhwa KIM, Won Jin CHUNG
  • Patent number: 8227306
    Abstract: In multiple-layered memory devices, memory systems employing the same, and methods of forming such devices, a second memory device layer on a first memory device layer comprises a second substrate including a second memory cell region. The second substrate includes only a single well in the second memory cell region, the single well of the second memory cell region comprising a semiconducting material doped with impurity of one of a first type and second type. The single well defines an active region in the second memory cell region of the second substrate. Multiple second cell strings are arranged on the second substrate in the second active region.
    Type: Grant
    Filed: March 23, 2011
    Date of Patent: July 24, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jonghyuk Kim, Han-Soo Kim, YoungSeop Rah, Min-sung Song, Jang Young Chul, Soon-Moon Jung, Wonseok Cho
  • Patent number: 8222742
    Abstract: A semiconductor device includes a lower semiconductor layer with first conductive regions and including at least one dummy first conductive region, an upper semiconductor layer with second conductive regions on the lower semiconductor layer and including at least one dummy second conductive region, a penetration hole in the upper semiconductor layer and penetrating the dummy second conductive region and the upper semiconductor layer under the dummy second conductive region, a lower conductive line on the lower semiconductor layer and electrically connected to the first conductive regions, an upper conductive line on the upper semiconductor layer and electrically connected to the second conductive regions, and a first conductive plug in the penetration hole between the lower conductive line and the upper conductive line, the first conductive plug electrically connecting the lower and upper conductive lines and being spaced apart from sidewalls of the penetration hole.
    Type: Grant
    Filed: June 5, 2009
    Date of Patent: July 17, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hoo-Sung Cho, Han-Soo Kim, Jae-Hoon Jang