Abstract: A method for operating a memory includes receiving an input data set, saving a first level error correcting code ECC for the data in the input data set, saving second level ECCs for a plurality of second level groups of the data in the data set, storing the data set in the memory, and testing the data set to determine whether to use the first level ECC or the second level ECCs. The method includes, if the first level ECC is used, storing a flag enabling use of the first level ECC, else if the second level ECCs are used, storing a flag enabling use of the second level ECCs. The method includes storing the second level ECCs in a replacement ECC memory, and storing a pointer indicating locations of the second level ECCs in the replacement ECC memory.

Abstract: A memory cell undergoing programming is determined as belonging to a particular one of a plurality of second threshold voltage ranges that divide a present threshold voltage range of the particular memory cell. Programming pulses are applied to program the particular memory cell to within the target threshold voltage range. At least one of a program voltage and a total duration of the programming pulses applied to the particular memory cell is varied, depending on the particular second threshold voltage range of the memory cell.

Abstract: An operating method of a memory device comprises the following steps: a first page buffer receives a first input data to be programed into a first memory cell of the memory cells; a second page buffer receives a second input data to be programed into a second memory cell of the memory cells; and the first page buffer determines whether to shift a program verify (PV) voltage for the first input data according to the first and second input data.

Abstract: A method for maintaining a data set includes storing a base copy of the data set in a first non-volatile memory having a first writing speed, storing changes to the data set in a first change data set in a second non-volatile memory having a second writing speed, and generating a current copy of the data set by reading the base copy and the changes. If a threshold number of entries in the first change data set is reached, then part or all of the first change data set is moved into a second change data set in the first non-volatile memory, where the generating step includes reading the second change data set. If a threshold number of entries in the second change data set is reached, then the current copy is generated by reading the base copy and the changes in the first and the second non-volatile memory.

Abstract: A memory circuit with a word line driver and control circuitry is disclosed. The plurality of word line drivers are coupled to a plurality of word lines. Word line drivers include a CMOS inverter, which can have an input and an output, and a p-type transistor and an n-type transistor. The output of the CMOS inverter is coupled to one of the plurality of word lines. The control circuitry has multiple modes, including at least a first mode to discharge a particular word line of the plurality of word lines via a first discharge path such as at least a first transistor type of the CMOS inverter; and a second mode to discharge the particular word line of the plurality of word lines via a second discharge path such as at least the a second transistor type of the CMOS inverter.

Abstract: An integrated circuit with memory can operate with reduced latency between consecutive operations such as read operations. At a first time, a first operation command is finished on a memory array on an integrated circuit. At a second time, a second operation command is begun on the memory array. A regulated output voltage from the charge pump is coupled to word lines in the memory array. From the first time to the second time, a regulated output voltage is maintained at about a word line operation voltage such as a read voltage.

Abstract: The storage layer such as a nitride layer of a nonvolatile memory cell has two storage parts storing separately addressable data, typically respectively proximate to the source terminal and the drain terminal. The applied drain voltage while sensing the data of one of the storage parts depends on the data stored at the other storage part; the different parts can be in different, neighboring memory cells. If the data stored at the other storage part is represented by a threshold voltage exceeding a minimum threshold voltage, then the applied drain voltage is raised. This technology is useful in read operations and program verify operations to widen the threshold voltage window.

Abstract: An operating method of a memory device comprises the following steps: a first page buffer receives a first input data to be programed into a first memory cell of the memory cells; a second page buffer receives a second input data to be programed into a second memory cell of the memory cells; and the first page buffer determines whether to shift a program verify (PV) voltage for the first input data according to the first and second input data.

Abstract: An integrated circuit with memory can operate with reduced latency between consecutive operations such as read operations. At a first time, a first operation command is finished on a memory array on an integrated circuit. At a second time, a second operation command is begun on the memory array. A regulated output voltage from the charge pump is coupled to word lines in the memory array. From the first time to the second time, a regulated output voltage is maintained at about a word line operation voltage such as a read voltage.

Abstract: The clock circuit of an integrated circuit operates with variations such as temperature, ground noise, and power noise. Various aspects of an improved clock integrated circuit address one or more of the variations in temperature, ground noise, and power noise.

Abstract: A page buffer circuit includes a plurality of page buffers including a first page buffer. The first page buffer is configured to load input data of the first page buffer, and input data of at least one neighboring page buffer. The first page buffer is also configured to apply a bias corresponding to the input data of the first page buffer, and the input data of the at least one neighboring page buffer to a bit line.

Abstract: A sense circuit is coupled to a bit line of a memory array. Control circuitry coupled to the sense circuit controls a program operation for a memory cell. After a program phase in which the memory cell in the memory array is programmed, in a program verify phase the control circuitry causes the sense circuit to sense data stored on the memory cell multiple times during the program verify phase. The multiple times include a first time sensing data from the memory cell and a second time sensing data from the memory cell.

Abstract: A memory cell undergoing programming is determined as belonging to a particular one of a plurality of second threshold voltage ranges that divide a present threshold voltage range of the particular memory cell. Programming pulses are applied to program the particular memory cell to within the target threshold voltage range. At least one of a program voltage and a total duration of the programming pulses applied to the particular memory cell is varied, depending on the particular second threshold voltage range of the memory cell.

Abstract: One aspect of the technology is a memory device, which comprises a plurality of page buffers and control circuitry. Different page buffer circuits in the plurality of page buffer circuits are coupled to different bit lines in a plurality of bit lines in a memory array. The control circuitry is responsive to a program command to program multiple cells in the memory array, by setting, via the plurality of page buffer circuits, different target voltages at a same time for the different bit lines coupled to the multiple cells.

Abstract: A sense circuit is coupled to a bit line of a memory array. Control circuitry coupled to the sense circuit controls a program operation for a memory cell. After a program phase in which the memory cell in the memory array is programmed, in a program verify phase the control circuitry causes the sense circuit to sense data stored on the memory cell multiple times during the program verify phase. The multiple times include a first time sensing data from the memory cell and a second time sensing data from the memory cell.

Abstract: An integrated circuit with memory can operate with reduced latency between consecutive operations such as read operations. At a first time, a first operation command is finished on a memory array on an integrated circuit. At a second time, a second operation command is begun on the memory array. A regulated output voltage from the charge pump is coupled to word lines in the memory array. From the first time to the second time, a regulated output voltage is maintained at about a word line operation voltage such as a read voltage.

Abstract: The clock circuit of an integrated circuit operates with variations such as temperature, ground noise, and power noise. Various aspects of an improved clock integrated circuit address one or more of the variations in temperature, ground noise, and power noise.

Abstract: The storage layer such as a nitride layer of a nonvolatile memory cell has two storage parts storing separately addressable data, typically respectively proximate to the source terminal and the drain terminal. The applied drain voltage while sensing the data of one of the storage parts depends on the data stored at the other storage part; the different parts can be in different, neighboring memory cells. If the data stored at the other storage part is represented by a threshold voltage exceeding a minimum threshold voltage, then the applied drain voltage is raised. This technology is useful in read operations and program verify operations to widen the threshold voltage window.

Abstract: A method for programming a memory including a plurality of memory cells is provided. The method comprises selecting a cell and executing a program and program verify operation for the cell, including applying a sequence of program pulses and performing program verify steps. The sequence includes a starting pulse having a starting magnitude. The program verify steps use a program verify level. The method also comprises determining the starting magnitude for a next cell as a function of a magnitude of the program pulse in an instance of the program verify step in which the current cell passes verify at the program verify level.

Abstract: A method for programming a memory including a plurality of memory cells is provided. The method comprises selecting a current cell and executing a pre-program verify operation at a first program verify level. The method comprises executing a program and program verify operation for the current cell, including applying a sequence of program pulses and performing program verify steps. The sequence includes a starting pulse having a starting magnitude. The program verify steps use a second program verify level. The method also comprises determining the starting magnitude for a next cell as a function of a magnitude of the program pulse in an instance of the program verify step in which the current cell passes verify at the second program verify level.