Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor device package. In certain embodiments, a glass or silicon substrate is patterned by laser ablation to form structures for subsequent formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor device package, which may have one or more embedded double-sided dies therein. In certain embodiments, an insulating layer is formed over the substrate by laminating a pre-structured insulating film thereon. The insulating film may be pre-structured by laser ablation to form structures therein, followed by selective curing of sidewalls of the formed structures.

Abstract: The present disclosure relates to semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to semiconductor package devices having a stiffener framed formed thereon. The incorporation of the stiffener frame improves the structural integrity of the semiconductor package devices to mitigate warpage and/or collapse while simultaneously enabling utilization of thinner core substrates for improved signal integrity and power delivery between packaged devices.

Abstract: The present disclosure relates to thin-form-factor semiconductor packages with integrated electromagnetic interference (“EMI”) shields and methods for forming the same. The packages described herein may be utilized to form high-density semiconductor devices. In certain embodiments, a silicon substrate is laser ablated to include one or more cavities and a plurality of vias surrounding the cavities. One or more semiconductor dies may be placed within the cavities and thereafter embedded in the substrate upon formation of an insulating layer thereon. A plurality of conductive interconnections are formed within the vias and may have contact points redistributed to desired surfaces of the die-embedded substrate assembly. Thereafter, an EMI shield is plated onto a surface of the die-embedded substrate assembly and connected to ground by at least one of the one or more conductive interconnections. The die-embedded substrate assembly may then be singulated and/or integrated with another semiconductor device.

Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.

Abstract: The present disclosure relates to micro-via structures for interconnects in advanced wafer level semiconductor packaging. The methods described herein enable the formation of high-quality, low-aspect-ratio micro-via structures with improved uniformity, thus facilitating thin and small-form-factor semiconductor devices having high I/O density with improved bandwidth and power.

Abstract: A method for printing on a substrate includes printing a support structure by printing a liquid precursor material and curing the liquid precursor material, positioning a substrate within the support structure, printing one or more anchors on the substrate and the support structure by printing and curing the liquid precursor material to secure the substrate to the support structure, and printing one or more device structures on the substrate while anchored by printing and curing the liquid precursor material.

Abstract: The present disclosure relates to thin-form-factor reconstituted substrates and methods for forming the same. The reconstituted substrates described herein may be utilized to fabricate homogeneous or heterogeneous high-density 3D integrated devices. In one embodiment, a silicon substrate is structured by direct laser patterning to include one or more cavities and one or more vias. One or more semiconductor dies of the same or different types may be placed within the cavities and thereafter embedded in the substrate upon formation of an insulating layer thereon. One or more conductive interconnections are formed in the vias and may have contact points redistributed to desired surfaces of the reconstituted substrate. The reconstituted substrate may thereafter be integrated into a stacked 3D device.

Abstract: Printing on a substrate includes printing a support structure by printing a liquid precursor material and curing the liquid precursor material, printing one or more alignment markers by printing the liquid precursor material outside the support structure and curing the liquid precursor material, positioning a substrate within the support structure, performing a registration of the substrate using the one or more alignment markers, and printing one or more device structures on the substrate while registered by printing and curing the liquid precursor material.

Abstract: The present disclosure relates to methods and apparatus for structuring a semiconductor substrate. In one embodiment, a method of substrate structuring includes applying a resist layer to a substrate optionally disposed on a carrier. The resist layer is patterned using ultraviolet radiation or laser ablation. The patterned portions of the resist layer are then transferred onto the substrate by micro-blasting to form desired features in the substrate while unexposed or un-ablated portions of the resist layer shield the rest of the substrate. The substrate is then exposed to an etch process and a de-bonding process to remove the resist layer and release the carrier.

Abstract: Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.

Abstract: A method of fabricating a frame to enclose one or more semiconductor dies includes forming one or more features including one or more cavities and one or more through-vias in a substrate by a first laser ablation process, filling the one or more through-vias with a dielectric material, and forming a via-in-via in the dielectric material filled in each of the one or more through-vias by a second laser ablation process. The one or more cavities is configured to enclose one or more semiconductor dies therein. In the first laser ablation process, frequency, pulse width, and pulse energy of a first pulsed laser beam to irradiate the substrate are tuned based on a depth of the one or more features. In the second laser ablation process, frequency, pulse width, and pulse energy of a second pulsed laser beam to irradiate the dielectric material are tuned based on a depth of the via-in-via.

Abstract: The present disclosure relates to thin-form-factor reconstituted substrates and methods for forming the same. The reconstituted substrates described herein may be utilized to fabricate homogeneous or heterogeneous high-density 3D integrated devices. In one embodiment, a silicon substrate is structured by direct laser patterning to include one or more cavities and one or more vias. One or more semiconductor dies of the same or different types may be placed within the cavities and thereafter embedded in the substrate upon formation of an insulating layer thereon. One or more conductive interconnections are formed in the vias and may have contact points redistributed to desired surfaces of the reconstituted substrate. The reconstituted substrate may thereafter be integrated into a stacked 3D device.

Abstract: Methods for forming circuit boards and circuit boards using an adhesion layer are described. A substrate with two surfaces is exposed to a bifunctional organic compound to form an adhesion layer on the first substrate surface. A resin layer is then deposited on the adhesion layer and the exposed substrate surfaces. Portions of the resin layer may be removed to expose metal pads for contacts.

Abstract: A method for printing on a substrate includes printing a support structure by printing a liquid precursor material and curing the liquid precursor material, printing one or more alignment markers by printing the liquid precursor material outside the support structure and curing the liquid precursor material, positioning a substrate within the support structure, performing a registration of the substrate using the one or more alignment markers, and printing one or more device structures on the substrate while registered by printing and curing the liquid precursor material.

Abstract: The present disclosure relates to methods and apparatus for structuring a semiconductor substrate. In one embodiment, a method of substrate structuring includes applying a resist layer to a substrate optionally disposed on a carrier. The resist layer is patterned using ultraviolet radiation or laser ablation. The patterned portions of the resist layer are then transferred onto the substrate by micro-blasting to form desired features in the substrate while unexposed or un-ablated portions of the resist layer shield the rest of the substrate. The substrate is then exposed to an etch process and a de-bonding process to remove the resist layer and release the carrier.

Abstract: A method and apparatus for forming a plurality of vias in panels for advanced packaging applications is disclosed, according to one embodiment. A redistribution layer is deposited on a substrate layer. The redistribution layer may be deposited using a spin coating process, a spray coating process, a drop coating process, or lamination. The redistribution layer is then micro-imprinted using a stamp inside a chamber. The redistribution layer and the stamp are then baked inside the chamber. The stamp is removed from the redistribution layer to form a plurality of vias in the redistribution layer. Excess residue built-up on the redistribution layer may be removed using a descumming process. A residual thickness layer disposed between the bottom of each of the plurality of vias and the top of the substrate layer may have thickness of less than about 1 ?m.

Abstract: A method for producing an electrical component is disclosed using a molybdenum adhesion layer, connecting a polyimide substrate to a copper seed layer and copper plated attachment.

Abstract: The present disclosure relates to thin-form-factor semiconductor packages with integrated electromagnetic interference (“EMI”) shields and methods for forming the same. The packages described herein may be utilized to form high-density semiconductor devices. In certain embodiments, a silicon substrate is laser ablated to include one or more cavities and a plurality of vias surrounding the cavities. One or more semiconductor dies may be placed within the cavities and thereafter embedded in the substrate upon formation of an insulating layer thereon. A plurality of conductive interconnections are formed within the vias and may have contact points redistributed to desired surfaces of the die-embedded substrate assembly. Thereafter, an EMI shield is plated onto a surface of the die-embedded substrate assembly and connected to ground by at least one of the one or more conductive interconnections. The die-embedded substrate assembly may then be singulated and/or integrated with another semiconductor device.

Abstract: A method of printing structures on a reconstructed wafer includes positioning a plurality of semiconductor dies on a support substrate, anchoring the plurality of semiconductor dies to the support substrate by printing a plurality of anchors that extend across edges of the semiconductor dies onto the support substrate and thus form a reconstructed wafer, and printing one or more device structures on the pluralities of semiconductor dies while anchored on the support substrate. The printing operations include ejecting droplets of a liquid precursor material and curing the liquid precursor material.

Abstract: The present disclosure generally relates to stacked miniaturized electronic devices and methods of forming the same. More specifically, embodiments described herein relate to semiconductor device spacers and methods of forming the same. The semiconductor device spacers described herein may be utilized to form stacked semiconductor package assemblies, stacked PCB assemblies, and the like.