Abstract: In some embodiments, a catoptric microlithgraphy projection optical system includes a plurality of reflective optical elements arranged to image radiation from an object field in an object plane to an image field in an image plane. The image field can have a size of at least 1 mm×1 mm. This optical system can have an object-image shift (OIS) of about 75 mm or less. Metrology and testing can be easily implemented despite rotations of the optical system about a rotation axis. Such a catoptric microlithgraphy projection optical system can be implemented in a microlithography tool. Such a microlithography tool can be used to produce microstructured components.

Abstract: In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength ? from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about ? or more at one or more locations of the rotationally-asymmetric surface.

Abstract: An imaging system for imaging an off-axis object field arranged in an object surface of the imaging system onto an off-axis image field arranged in an image surface of the imaging system while creating at least one intermediate image has: an optical axis; an in-line mirror group having an object side mirror group entry, an image side mirror group exit and a mirror group plane aligned transversely to the optical axis and arranged geometrically between the mirror group entry and the mirror group exit, the mirror group including: a first mirror having a first mirror surface for receiving radiation coming from the object surface in a first reflecting area asymmetric to the optical axis; at least one second mirror having a second mirror surface facing the first mirror surface for receiving radiation coming from the first mirror in a second reflecting area asymmetric to the optical axis; at least one of the first and second mirrors being a concave mirror having a concave mirror surface defining a mirror axis on the

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.

Abstract: A method for producing an element having at least one arbitrarily freely formed surface (freeform surface) having a high accuracy of form and a low surface roughness. The freeform surface is obtained by at least one first processing step with a shaping material processing method in which at least an approximation to the desired freeform surface (target form) is effected, and at least one second step with a material processing method that smooths the surface, wherein at least during the second processing step of the smoothing material processing, the element (1) to be processed is elastically stressed by force introduction such that the freeform surface to be smoothed is processed by smoothing processes for spherical, plane or aspherical surfaces.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

Abstract: There is provided a reflective X-ray microscope for examining an object in an object plane. The reflective X-ray microscope includes (a) a first subsystem, having a first mirror and a second mirror, disposed in a beam path from the object plane to the image plane, and (b) a second subsystem, having a third mirror, situated downstream of the first subsystem in the beam path. The object is illuminated with radiation having a wavelength <100 nm, and the reflective X-ray microscope projects the object with magnification into an image plane.

Abstract: One problem of projection optics concerns pupil apodization which leads to imaging defects. As here proposed, the illumination system is configured to illuminate the mask inhomogeneously. As a result, inhomogeneities in reflectivity caused by the mask itself are at least partly counteracted. This compensation not only makes the apodization over the pupil become more symmetric but also makes the intensity variation smaller overall.

Abstract: In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength ? from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about ? or more at one or more locations of the rotationally-asymmetric surface.

Abstract: For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

Abstract: The present invention relates to a microlithography projection exposure apparatus for wavelengths ?100 nm, in particular for EUV lithography using wavelengths <50 nm, preferably <20 nm having an illumination system which illuminates a field in an object plane using light of a defined polarization state and an objective which projects the field in the object plane into an image plane, the polarized light passing through the objective from the object plane to the image plane.

Abstract: A mask having a multilayer coating of a specified period thickness distribution such as those used in lithography devices for producing semiconductor components. One problem of projection optics concerns pupil apodization which leads to imaging defects. As here proposed, the period thickness in the mask plane is selected so that it is greater than the period thickness for maximum reflectivity. As a result, not only does the apodization over the pupil become more symmetric but the intensity variation also becomes smaller overall.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: A method for correcting a field-constant astigmatism of a projection objective of a microlithography projection exposure apparatus, the projection objective having an arrangement composed of a plurality of optical elements that images at least a part of an object onto an off-axis image field lying outside at least one optical axis, the arrangement of the plurality of optical elements having a plane of symmetry that is defined by the at least one optical axis and a center of the image field, includes adjusting a position of at least one element of the plurality of optical elements in such a way that at least one linear and/or quadratic astigmatism is produced that compensates the field-constant astigmatism at least partially. A projection objective of a projection exposure apparatus, as well as a microlithographic method for producing micropatterned components uses the method.

Abstract: The invention relates to a projection system for guiding light with wavelengths ?193 nm from an object plane to an image plane, comprising at least a first mirror (M1), a second mirror (M2), a third mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) centered around an optical axis and being arranged along the optical axis, with the light traveling from the object plane to the first mirror, then from the first mirror (M1) to the second mirror (M2), then from the second mirror (M2) to the third mirror (M3), then from the third mirror (M3), the fourth mirror (M4), then from the fourth mirror to the fifth mirror (M5) and then from the fifth mirror (M5) to the sixth mirror (M6), The invention is characterized in that the first mirror (M1) is arranged along the optical axis (HA) geometrically between the fifth mirror (M5) and the sixth mirror (M6), and the third mirror (M3) is a convex mirror.

Abstract: A projection objective provides a light path for a light bundle from an object field in an object plane to an image field in an image plane. The projection objective includes a first mirror (S1), a second mirror (S2), a third mirror (S3), a fourth mirror (S4), a fifth mirror (S5), a sixth mirror (S6), a seventh mirror (S7), and an eighth mirror (S8). The light bundles includes light with a wavelength in a range of 10-30 nm. The light is provided via the eight mirrors, and in the light path exactly one intermediate image of the object field is provided.

Abstract: In general, in one aspect, the invention features a system that includes a catoptric projection objective having an optical axis and including a plurality of projection objective elements positioned between an object plane and an image plane, the object and image planes being orthogonal to the optical axis, the projection objective being configured so that during operation the projection objective directs radiation reflected at the object plane to the image plane to form an image at the image plane of an object positioned in a field at the object plane, the field having a first dimension of 8 mm or more and a second dimension of 8 mm or more, the first and second dimensions being along orthogonal directions.