Abstract: The disclosure relates a projection objective for imaging an object field in an object plane into an image field in an image plane. The disclosure also relates to a microlithographic projection exposure apparatus including such a projection objective. The disclosure further relates to methods of using such a projection exposure apparatus to fabricate microstructured or nanostructured components, such as highly integrated semiconductor components. In addition, the disclosure relates to components fabricated by such methods.

Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract: An illumination optical system for projection lithography for the illumination of an illumination field has a facet mirror. An optical system, which follows the illumination optical system, has an object field which can be arranged in the illumination field of the illuminate optical system. The facet mirror has a plurality of facets to reflectively guide part bundles of a bundle of illumination light. Reflection faces of the facets are tiltable in each case. In a first illumination tilt position, the tiltable facets guide the part bundle impinging on them along a first object field illumination channel to the illumination field. In a different illumination tilt position, the tiltable facets guide the part bundle impinging on them along a different object field illumination channel to the illumination field.

Abstract: A method and lithography device addressing the problem in projection optics of pupil apodization which leads to imaging defects. As here proposed, the illumination system is configured to illuminate the mask inhomogeneously. As a result, inhomogeneities in reflectivity caused by the mask itself are at least partly counteracted. This compensation not only makes the apodization over the pupil become more symmetric but also makes the intensity variation smaller overall.

Abstract: For the use in illumination systems and projection exposure apparatuses for UV or EUV lithography, a reflective optical element is provided for a operating wavelength in the ultraviolet to extreme ultraviolet wavelength ranges. The reflective optical element includes a substrate and a reflective surface on the substrate. The multilayer system has layers of at least two alternating materials having different real parts of the refractive index at the operating wavelength. Radiation in the operating wavelength of a certain incident angle bandwidth distribution can impinge on the reflective optical element. The reflective surface includes one or more first portions, in which the layers have alternating materials of a first period thickness. The reflective surface includes one or more additional portions, in which the layers of alternating materials have a first period thickness and at least one additional period thickness.

Abstract: The disclosure generally relates to imaging optical systems that include a plurality of mirrors, which image an object field lying in an object plane in an image field lying in an image plane, where at least one of the mirrors has a through-hole for imaging light to pass through. The disclosure also generally relates to projection exposure installations that include such imaging optical systems, methods of using such projection exposure installations, and components made by such methods.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax (Y??NA2) and wherein the condition COMP1<10 holds.

Abstract: In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

Abstract: A microlithography projection exposure apparatus for producing microelectronic components has at least two operating states. The microlithography projection exposure apparatus includes a reflective mask in an object plane. In the first operating state, a first partial region of the mask is illuminated by a first radiation, which has an assigned first centroid direction having a first centroid direction vector at each point of the first partial region. In the second operating state, a second partial region of the mask is illuminated by a second radiation, which has an assigned second centroid direction having a second centroid direction vector at each point of the second partial region. The first and the second partial region have a common overlap region.

Abstract: The invention relates to a projection system for guiding light with wavelengths ?193 nm from an object plane to an image plane, comprising at least a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror and a sixth mirror centered around an optical axis and being arranged along the optical axis, with the light traveling from the object plane to the first mirror, then from the first mirror to the second mirror, then from the second mirror to the third mirror, then from the third mirror, the fourth mirror, then from the fourth mirror to the fifth mirror and then from the fifth mirror to the sixth mirror, The invention is characterized in that the first mirror is arranged along the optical axis geometrically between the fifth mirror and the sixth mirror, and the third mirror is a convex mirror.

Abstract: The invention relates to a microlithography projection lens for wavelengths ?248 nm ?, preferably ?193 mm, in particular EUV lithography for wavelengths ranging from 1-30 nm for imaging an object field in an object plane onto an image field in an image plane, the microlithography projection lens developed in such a manner that provision is made for an accessible diaphragm plane, into which for instance an iris diaphragm can be introduced.

Abstract: The disclosure relates an illumination system configured to guide illumination light from a radiation source to an object plane and to provide defined illumination of an object field in the object plane, wherein illumination light is supplied to the object field by a bundle-guiding optical pupil component which is disposed in a pupil plane of the projection objective, and wherein at least another bundle-guiding component is disposed upstream of the pupil component in the beam path of the illumination light. The disclosure further concerns a projection exposure apparatus that includes such an illumination system of this type, a method of fabricating a microstructured component using such a projection exposure apparatus, and a microstructured component fabricated using such a method.

Abstract: The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.

Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

Abstract: An imaging optical system includes a plurality of mirrors configured to image an object field in an object plane of the imaging optical system into an image field in an image plane of the imaging optical system. An illumination system includes such an imaging optical system. The transmission losses of the illumination system are relatively low.

Abstract: The invention relates to a projection system for guiding light with wavelengths ?193 nm from an object plane to an image plane, comprising at least a first mirror, a second mirror, a third mirror, a fourth mirror, a fifth mirror and a sixth mirror centered around an optical axis and being arranged along the optical axis, with the light traveling from the object plane to the first mirror, then from the first mirror to the second mirror then from the second mirror to the third mirror, then from the third mirror, the fourth mirror, then from the fourth mirror to the fifth mirror and then from the fifth mirror to the sixth mirror. The invention is characterized in that the first mirror is arranged along the optical axis geometrically between the fifth mirror and the sixth mirror, and the third mirror is a convex mirror.

Abstract: A projection optics for microlithography, which images an object field in an object plane into an image field in an image plane, where the projection optics include at least one curved mirror and including at least one refractive subunit, as well as related systems, components, methods and products prepared by such methods, are disclosed.

Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract: An imaging optics has a plurality of mirrors to image an object field in an object plane into an image field in an image plane. At least one of the mirrors has a through opening for the passage of imaging light. An arrangement of the mirrors is such that principal rays run parallel or divergently in the beam path of the imaging light between the object plane and the first downstream mirror. The imaging optics can have an entrance pupil plane that lies in the beam path of the imaging light in the range of between 5 m and 2000 m in front of the object plane. The imaging optics can have an entrance pupil plane that lies in the beam path of the imaging light in the range of between 100 mm and 5000 mm in front of the object plane. Imaging optics with improved imaging quality are provided.

Abstract: A projection objective for a microlithographic EUV projection exposure apparatus includes a first mirror and a second mirror. The first mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The second mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The first and second mirrors are configured so that, with otherwise equal irradiation by EUV light, the mirror substrate of the first mirror compacts less than the mirror substrate of the second mirror under the effect of the EUV light.