Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

Abstract: In some embodiments, a catoptric microlithgraphy projection optical system includes a plurality of reflective optical elements arranged to image radiation from an object field in an object plane to an image field in an image plane. The image field can have a size of at least 1 mm×1 mm. This optical system can have an object-image shift (OIS) of about 75 mm or less. Metrology and testing can be easily implemented despite rotations of the optical system about a rotation axis. Such a catoptric microlithgraphy projection optical system can be implemented in a microlithography tool. Such a microlithography tool can be used to produce microstructured components.

Abstract: A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength ? from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of face shifting masks as objects to be imaged, in particular for EUV wavelengths.

Abstract: In general, in a first aspect, the invention features a system that includes a microlithography projection optical system. The microlithography projection optical system includes a plurality of elements arranged so that during operation the plurality of elements image radiation at a wavelength ? from an object plane to an image plane. At least one of the elements is a reflective element that has a rotationally-asymmetric surface positioned in a path of the radiation. The rotationally-asymmetric surface deviates from a rotationally-symmetric reference surface by a distance of about ? or more at one or more locations of the rotationally-asymmetric surface.

Abstract: The disclosure relates a projection objective for imaging an object field in an object plane into an image field in an image plane. The disclosure also relates to a microlithographic projection exposure apparatus including such a projection objective. The disclosure further relates to methods of using such a projection exposure apparatus to fabricate microstructured or nanostructured components, such as highly integrated semiconductor components. In addition, the disclosure relates to components fabricated by such methods.

Abstract: The disclosure relates an illumination system configured to guide illumination light from a radiation source to an object plane and to provide defined illumination of an object field in the object plane, wherein illumination light is supplied to the object field by a bundle-guiding optical pupil component which is disposed in a pupil plane of the projection objective, and wherein at least another bundle-guiding component is disposed upstream of the pupil component in the beam path of the illumination light. The disclosure further concerns a projection exposure apparatus that includes such an illumination system of this type, a method of fabricating a microstructured component using such a projection exposure apparatus, and a microstructured component fabricated using such a method.

Abstract: The disclosure relates to an optical projection arrangement that can be used to image a reticle onto a substrate. The projection arrangement includes reflective elements, by which a ray path is defined. A combination stop is in a pupil of the ray path. The combination stop has a first opening (aperture opening) for use as an aperture stop. The combination stop also has a second opening for allowing passage of a ray bundle of the ray path, such that the combination stop acts as a combined aperture stop and stray light stop. In addition, the disclosure relates to a corresponding combination stop for optical arrangements, as well as related systems, components and methods.

Abstract: A method of manufacturing a projection objective (22) of a microlithographic projection exposure apparatus (10). The projection objective (22) comprises at least one mirror (M1 to M6) that each have a mirror support (241 to 246) and a reflective coating (26) applied thereon. First imaging aberrations of a pre-assembled projection objective are measured. Before the coating (26) is applied, the mirror supports (241 to 246) are provided with a desired surface deformation (34). If the mirrors (M1 to M6) are not reflective for projection light without the coating (26), measuring light is used that has another wavelength. Alternatively, two identical mirror supports (246) may be provided. One support having a reflective coating is part of the pre-assembled projection objective whose imaging aberrations are measured. The other support is provided with surface deformations before coating and mounting the support into the objective.

Abstract: A projection exposure apparatus for transferring an image of a patterned reticle onto a substrate comprises an illumination optical system for generating and directing an exposure beam onto the reticle, and a projection optical system provided between the reticle and the substrate. The projection optical system has a plurality of imaging mirrors each having a mirror support made of a support material. The support materials are subject to thermal expansion during projection that induces imaging aberrations at substrate level. The support materials are selected such that an aberration merit function, which is indicative of the overall amount of at least one type of the thermally induced aberrations, is minimized by mutual compensation of contributions of the mirrors to the one type of thermally induced aberrations. As a result, the mirror supports will then generally be different and have, when heated during exposure, different coefficients of thermal expansion.

Abstract: An optical system for radiation in the EUV wavelength range, in particular a projection exposure apparatus, having at least one vacuum vessel, including: at least one EUV-reflective optical element arranged in an optical path, and a holder which includes at least one sample element, the sample element having an optical surface which is exposed to incident EUV-radiation outside of the optical path, the sample element being sensitive to chemical alterations under influence of the incident EUV-radiation which also affect the optical element. The optical system further includes at least one detection unit for online detection of the contamination status of the sample element during exposure of the sample element to the incident EUV-radiation.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.

Abstract: A method of determining materials of lenses contained in an optical system of a projection exposure apparatus is described. First, for each lens of a plurality of the lenses, a susceptibility factor KLT/LH is determined. This factor is a measure of the susceptibility of the respective lens to deteriorations caused by at least one of lifetime effects and lens heating effects. Then a birefringent fluoride crystal is selected as a material for each lens for which the susceptibility factor KLT/LH is above a predetermined threshold. Theses lenses are assigned to a first set of lenses. For these lenses, measures are determined for reducing adverse effects caused by birefringence inherent to the fluoride crystals.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.

Abstract: There is provided an illumination system for microlithography. The illumination system includes an optical element having a plurality of field raster elements, a plane in which a field is illuminated, and a grazing incidence mirror situated in a light path from the optical element to the plane, after the optical element. The illumination system has no other grazing incidence mirror in the light path, after the optical element and before the plane.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.

Abstract: For the correction of anamorphism in the case of a projection lens of an EUV projection exposure apparatus for wafers it is proposed to tilt the reticle bearing the pattern to be projected and preferably also the wafer by a small angle about an axis that is perpendicular to the axis A of the lens and perpendicular to the scan direction and that in each instance passes through the middle of the light field generated on the reticle or on the wafer. For the correction of a substantially antisymmetric quadratic distortion the reticle and/or the substrate is instead rotated about an axis of rotation that is disposed at least approximately parallel to an optical axis of the projection lens.

Abstract: A projection lens for imaging a pattern arranged in an object plane onto an image plane using electromagnetic radiation from the extreme-ultraviolet (EUV) spectral region has several imaging mirrors between its object plane and image plane that define an optical axis of the projection lens and have reflective coatings. At least one of those mirrors has a graded reflective coating that has a film-thickness gradient that is rotationally symmetric with respect to a coating axis, where that coating axis is acentrically arranged with respect to the optical axis of the projection lens. Providing at least one acentric, graded, reflective coating allows designing projection lenses that allow highly uniform field illumination, combined with high total transmittance.

Abstract: A method of manufacturing a projection objective (22) of a microlithographic projection exposure apparatus (10). The projection objective (22) comprises at least one mirror (M1 to M6) that each have a mirror support (241 to 246) and a reflective coating (26) applied thereon. First imaging aberrations of a pre-assembled projection objective are measured. Before the coating (26) is applied, the mirror supports (241 to 246) are provided with a desired surface deformation (34). If the mirrors (M1 to M6) are not reflective for projection light without the coating (26), measuring light is used that has another wavelength. Alternatively, two identical mirror supports (246) may be provided. One support having a reflective coating is part of the pre-assembled projection objective whose imaging aberrations are measured. The other support is provided with surface deformations before coating and mounting the support into the objective.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.