Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first Intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength ? from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of face shifting masks as objects to be imaged, in particular for EUV wavelengths.

Abstract: An apparatus (10) for microlithographic projection exposure, which includes: an optical system (18) for imaging mask structures (16) onto a surface (21) of a substrate (20) by projecting the mask structures (16) with imaging radiation (13) onto an exposure area of the substrate surface, and various structure defining a measurement beam path (36) for guiding measurement radiation (34). The measurement beam path (36) extends within the optical system (18) such that the measurement radiation (34) impinges on a measurement area on the substrate surface that is offset from the exposure area.

Abstract: A method of manufacturing a projection objective (22) of a microlithographic projection exposure apparatus (10). The projection objective (22) comprises at least one mirror (M1 to M6) that each have a mirror support (241 to 246) and a reflective coating (26) applied thereon. First imaging aberrations of a pre-assembled projection objective are measured. Before the coating (26) is applied, the mirror supports (241 to 246) are provided with a desired surface deformation (34). If the mirrors (M1 to M6) are not reflective for projection light without the coating (26), measuring light is used that has another wavelength. Alternatively, two identical mirror supports (246) may be provided. One support having a reflective coating is part of the pre-assembled projection objective whose imaging aberrations are measured. The other support is provided with surface deformations before coating and mounting the support into the objective.

Abstract: An imaging optical system includes a plurality of mirrors configured to image an object field in an object plane of the imaging optical system into an image field in an image plane of the imaging optical system. An illumination system includes such an imaging optical system. The transmission losses of the illumination system are relatively low.

Abstract: A projection objective for imaging a pattern provided in an object plane onto an image plane includes: a first objective part to image the pattern provided in the object plane to a first intermediate image, wherein all of the elements in the first objective part having optical power to image the pattern are refractive elements; a second objective part that includes at least one concave mirror to image the first intermediate image to a second intermediate image; and a third objective part to image the second intermediate image to the image plane, wherein all of the elements in the third objective part having optical power are refractive elements. An aperture stop is positioned in the third objective part and there are no more than four lenses in the third objective part between the aperture stop and the image plane. The projection objective has an image side numerical aperture >0.9.

Abstract: A magnifying imaging optical unit has at least four mirrors to image an object field in an object plane into an image field in an image plane. An absolute value of the Petzval radius of the image field is greater than 500 mm. The imaging optical unit can be used to inspect with sufficient imaging quality relatively large mask sections of lithography masks used during projection exposure to produce large scale integrated semiconductor components.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first Intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract: In some embodiments, a catoptric microlithgraphy projection optical system includes a plurality of reflective optical elements arranged to image radiation from an object field in an object plane to an image field in an image plane. The image field can have a size of at least 1 mm×1 mm. This optical system can have an object-image shift (OIS) of about 75 mm or less. Metrology and testing can be easily implemented despite rotations of the optical system about a rotation axis. Such a catoptric microlithgraphy projection optical system can be implemented in a microlithography tool. Such a microlithography tool can be used to produce microstructured components.

Abstract: The disclosure generally relates to imaging optical systems that include a plurality of mirrors, which image an object field lying in an object plane in an image field lying in an image plane, where at least one of the mirrors has a through-hole for imaging light to pass through. The disclosure also generally relates to projection exposure installations that include such im-aging optical systems, methods of using such projection exposure installa-tions, and components made by such methods.

Abstract: An imaging optical system includes a plurality of mirrors configured to image an object field in an object plane of the imaging optical system into an image field in an image plane of the imaging optical system. An illumination system includes such an imaging optical system. The transmission losses of the illumination system are relatively low.

Abstract: The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.

Abstract: A magnifying imaging optical unit has at least four mirrors to image an object field in an object plane into an image field in an image plane. An absolute value of the Petzval radius of the image field is greater than 500 mm. The imaging optical unit can be used to inspect with sufficient imaging quality relatively large mask sections of lithography masks used during projection exposure to produce large scale integrated semiconductor components.

Abstract: A magnifying imaging optical system is disclosed that has precisely three mirrors, which image an object field in an object plane into an image field in an image plane. A ratio between a transverse dimension of the image field and a transverse dimension measured in the same direction of a useful face of the last mirror before the image field is greater than 3. In a further aspect, the magnifying imaging optical system is disclosed that has at least three mirrors, which image an object field in an object plane in an image field in an image plane. A first mirror in the beam path after the object field is concave, a second mirror is also concave and a third mirror is convex. An angle of incidence of imaging beams on the last mirror before the image field is less than 15°.

Abstract: An imaging optical unit includes at least four mirrors to image an object field in an object plane into an image field in an image plane. The ratio of the structural length of the imaging optical unit to the imaging scale of the imaging optical unit is less than 4.9 mm. The imaging optical unit provides improved handling properties, such as, for example, when used in a metrology system.

Abstract: An illumination optical system for projection lithography for the illumination of an illumination field has a facet mirror. An optical system, which follows the illumination optical system, has an object field which can be arranged in the illumination field of the illuminate optical system. The facet mirror has a plurality of facets to reflectively guide part bundles of a bundle of illumination light. Reflection faces of the facets are tiltable in each case. In a first illumination tilt position, the tiltable facets guide the part bundle impinging on them along a first object field illumination channel to the illumination field. In a different illumination tilt position, the tiltable facets guide the part bundle impinging on them along a different object field illumination channel to the illumination field.

Abstract: The disclosure concerns a projection objective, which can include an object plane in which an object field is formed, an entry pupil, a mirrored entry pupil (RE) in a mirrored entry pupil plane obtained by mirroring the entry pupil (VE) at the object plane, an image plane, an optical axis, at least a first mirror and a second mirror. The projection objective can have a negative back focus of the entry pupil, and a principal ray originating from a central point of the object field and traversing the objective from the object plane to the image plane can intersect the optical axis in at least one point of intersection, wherein the geometric locations of all points of intersection lie between the image plane and the mirrored entry pupil plane.

Abstract: The disclosure generally relates to imaging optical systems that include a plurality of mirrors, which image an object field lying in an object plane in an image field lying in an image plane, where at least one of the mirrors has a through-hole for imaging light to pass through. The disclosure also generally relates to projection exposure installations that include such imaging optical systems, methods of using such projection exposure installations, and components made by such methods.

Abstract: A catadioptric projection objective for imaging a pattern onto an image plane includes: a first objective part for imaging the pattern into a first intermediate image; a second objective part for imaging the first intermediate image into a second intermediate image; and a third objective part for imaging the second intermediate image onto the image plane. A first concave mirror having a continuous mirror surface and a second concave mirror having a continuous mirror surface are upstream of the second intermediate image. A pupil surface is formed between the object plane and the first intermediate image, between the first and the second intermediate image, and between the second intermediate image and the image plane. A plate having essentially parallel plate surfaces is positioned in the first objective part near the pupil surface. At least one plate surface is aspherized to correct for aberrations.