Abstract: Imaging optics includes a first mirror in the imaging beam path after the object field, a last mirror in the imaging beam path before the image field, and a fourth to last mirror in the imaging beam path before the image field. In an unfolded imaging beam path between the object plane and the image plane, an impingement point of the chief ray on a used region of each of the plurality of mirrors has a mirror spacing from the image plane. The mirror spacing of the first mirror is greater than the mirror spacing of the last mirror. The mirror spacing of the fourth to last mirror is greater than the mirror spacing of the first mirror. Chief rays that emanate from points of the object field that are spaced apart from another have a mutually diverging beam course, giving a negative back focus of the entrance pupil.

Abstract: An imaging optical unit (7) serves for imaging an object field (4) in an object plane (5) into an image field (8) in an image plane (9). The imaging optical unit (7) has a plurality of components (M1 to M6, GI) which guide imaging light (3). The imaging optical unit (7) is embodied as a pupil-obscured system. The imaging optical unit (7) has at least one mirror (GI) for grazing incidence of the imaging light (3). The result is an imaging optical unit having a handleable combination of low imaging aberrations and compact construction.

Abstract: In a projection objective for imaging a pattern arranged in the object plane of the projection objective into the image plane of the projection objective, at least one optical component is provided which has a substrate in which at least one substrate surface is covered with an interference layer system having a great spatial modulation of the reflectance and/or of the transmittance over a usable cross section of the optical component, the modulation being adapted to a spatial transmission distribution of the remaining components of the projection objective in such a way that an intensity distribution of the radiation that is measured in a pupil surface has a substantially reduced spatial modulation in comparison with a projection objective without the interference layer system.

Abstract: An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |??| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.

Abstract: An objective having a plurality of optical elements arranged to image a pattern from an object field to an image field at an image-side numerical aperture NA>0.8 with electromagnetic radiation from a wavelength band around a wavelength ? includes a number N of dioptric optical elements, each dioptric optical element i made from a transparent material having a normalized optical dispersion ?ni=ni(?0)?ni(?0+1 pm) for a wavelength variation of 1 pm from a wavelength ?0. The objective satisfies the relation ? ? i = 1 N ? ? ? ? n i ? ( s i - d i ) ? ? 0 ? NA 4 ? A for any ray of an axial ray bundle originating from a field point on an optical axis in the object field, where si is a geometrical path length of a ray in an ith dioptric optical element having axial thickness di and the sum extends on all dioptric optical elements of the objective. Where A=0.2 or below, spherochromatism is sufficiently corrected.

Abstract: An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |??| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.

Abstract: An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |??| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.

Abstract: The disclosure relates to an optical arrangement in a projection objective of a microlithographic projection exposure apparatus which is designed for operation in EUV. The optical arrangement includes first and second mirrors that are in direct succession to each other along the projection beam direction. The second mirror is rigidly connected to the first mirror.

Abstract: Imaging optics includes a first mirror in the imaging beam path after the object field, a last mirror in the imaging beam path before the image field, and a fourth to last mirror in the imaging beam path before the image field. In an unfolded imaging beam path between the object plane and the image plane, an impingement point of the chief ray on a used region of each of the plurality of mirrors has a mirror spacing from the image plane. The mirror spacing of the first mirror is greater than the mirror spacing of the last mirror. The mirror spacing of the fourth to last mirror is greater than the mirror spacing of the first mirror. Chief rays that emanate from points of the object field that are spaced apart from another have a mutually diverging beam course, giving a negative back focus of the entrance pupil.

Abstract: In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.

Abstract: A projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, and has a first lens group of negative refractive power, a second lens group of positive refractive power, a third lens group of negative refractive power, a fourth lens group of positive refractive power and a fifth lens group of positive refractive power. The fourth lens group has an entrance surface (E) that lies in the vicinity of a point of inflection of a marginal ray height between the third lens group (LG3) and the fourth lens group (LG4). No negative lens of substantial refractive power is arranged between the entrance surface and the system diaphragm (5). Embodiments of inventive projection objectives achieve a very high numerical aperture NA>1 in conjunction with a large image field and are distinguished by a compact design size.

Abstract: A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |?|<1. The optical elements form a dry objective adapted with regard to aberrations to a gaseous medium with refractive index n?<1.01 filling an image space of finite thickness between an exit surface of the projection objective and the image surface. The optical elements include a largest lens having a maximum lens diameter Dmax and are configured to provide an image-side numerical aperture NA<1 in an effective image field having a maximum image field height Y?. With COMP=Dmax/(Y?·(NA/n?)2) the condition COMP<15.8 holds.

Abstract: In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.

Abstract: A projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, and has a first lens group of negative refractive power, a second lens group of positive refractive power, a third lens group of negative refractive power, a fourth lens group of positive refractive power and a fifth lens group of positive refractive power. The fourth lens group has an entrance surface (E) that lies in the vicinity of a point of inflection of a marginal ray height between the third lens group (LG3) and the fourth lens group (LG4). No negative lens of substantial refractive power is arranged between the entrance surface and the system diaphragm (5). Embodiments of inventive projection objectives achieve a very high numerical aperture NA>1 in conjunction with a large image field and are distinguished by a compact design size.

Abstract: A projection exposure apparatus for the exposure of a radiation-sensitive substrate arranged in the region of an image surface of a projection objective with at least one image of a pattern of a mask that is arranged in the region of an object surface of the projection objective has a light source for emitting ultraviolet light from a wavelength band having a bandwidth ??>10 pm around a central operating wavelength ?>200 nm; an illumination system for receiving the light from the light source and for directing illumination radiation onto the pattern of the mask; and a projection objective for the imaging of the structure of the mask onto a light-sensitive substrate.

Abstract: In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.

Abstract: An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |??| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.

Abstract: A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |?|<1. The optical elements form a dry objective adapted with regard to aberrations to a gaseous medium with refractive index n?<1.01 filling an image space of finite thickness between an exit surface of the projection objective and the image surface. The optical elements include a largest lens having a maximum lens diameter Dmax and are configured to provide an image-side numerical aperture NA<1 in an effective image field having a maximum image field height Y?. With COMP=Dmax/(Y?·(NA/n?)2) the condition COMP<15.8 holds.

Abstract: A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups in the case of which a first lens group of negative refractive power, a second lens group of positive refractive power, a third lens group of negative refractive power, a fourth lens group of positive refractive power and a fifth lens group of positive refractive power are provided. The fourth lens group has an entrance surface (E) that lies in the vicinity of a point of inflection of a marginal ray height between the third lens group (LG3) and the fourth lens group (LG4). No negative lens of substantial refractive power is arranged between the entrance surface and the system diaphragm (5). Embodiments of inventive projection objectives achieve a very high numerical aperture NA>1 in conjunction with a large image field and are distinguished by a compact design size.

Abstract: A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |?|<1. The optical elements form a dry objective adapted with regard to aberrations to a gaseous medium with refractive index n?<1.01 filling an image space of finite thickness between an exit surface of the projection objective and the image surface. The optical elements include a largest lens having a maximum lens diameter Dmax and are configured to provide an image-side numerical aperture NA<1 in an effective image field having a maximum image field height Y?. With COMP=Dmax/(Y?·(NA/n?)2) the condition COMP<15.8 holds.