Abstract: An objective having a plurality of optical elements arranged to image a pattern from an object field in an object surface of the objective to an image field in an image surface region of the objective at an image-side numerical aperture NA>0.8 with electromagnetic radiation from a wavelength band around a wavelength ?, includes a number N of dioptric optical elements, each dioptric optical element i made from a transparent material having a normalized optical dispersion ?ni=ni(?0)?ni(?0+1 pm) for a wavelength variation of 1 pm from a wavelength ?0. The objective satisfies the relation ? ? i = 1 N ? ? ? ? n i ? ( s i - d i ) ? ? 0 ? NA 4 ? A for any ray of an axial ray bundle originating from a field point on an optical axis in the object field, where si is a geometrical path length of a ray in an ith dioptric optical element having axial thickness di and the sum extends on all dioptric optical elements of the objective. Where A=0.

Abstract: A projection objective of a projection exposure apparatus for microlithography serves for imaging an object arranged in an object plane onto a light-sensitive wafer in an image plane. The projection objective has a plurality of optical elements which have at least one reflective element and at least one refractive element. The plurality of optical elements lie, in the light propagation direction of the useful light, downstream of the reflective element on a common straight optical axis. The at least one reflective element has a substrate having at least one opening through which light beams can pass. The at least one reflective element is at least partly made from a material which suppresses stray light impinging on the reflective element rearward.

Abstract: A microlithographic projection exposure apparatus contains an illumination system (12) for generating projection light (13) and a projection lens (20; 220; 320; 420; 520; 620; 720; 820; 920; 1020; 1120) with which a reticle (24) that is capable of being arranged in an object plane (22) of the projection lens can be imaged onto a light-sensitive layer (26) that is capable of being arranged in an image plane (28) of the projection lens. The projection lens is designed for immersion mode, in which a final lens element (L5; L205; L605; L705; L805; L905; L1005; L1105) of the projection lens on the image side is immersed in an immersion liquid (34; 334a; 434a; 534a). A terminating element (44; 244; 444; 544; 644; 744; 844; 944; 1044; 1144) that is transparent in respect of the projection light (13) is fastened between the final lens element on the image side and the light-sensitive layer.

Abstract: A microlithographic projection exposure apparatus contains an illumination system for generating projection light and a projection lens with which a reticle that is capable of being arranged in an object plane of the projection lens can be imaged onto a light-sensitive layer that is capable of being arranged in an image plane of the projection lens. The projection lens is designed for immersion mode, in which a final lens element of the projection lens on the image side is immersed in an immersion liquid. A terminating element that is transparent in respect of the projection is fastened between the final lens element on the image side and the light-sensitive layer.

Abstract: An optical imaging system for a microlithography projection exposure system is used for imaging an object field arranged in an object plane of the imaging system into an image field arranged in an image plane of the imaging system. A projection objective or a relay objective to be used in the illumination system can be involved, in particular. The imaging system has a plurality of lenses that are arranged between the object plane and the image plane and in each case have a first lens surface and a second lens surface. At least one of the lenses is a double aspheric lens where the first lens surface and the second lens surface is an aspheric surface. Lenses of good quality that have the action of an asphere with very strong deformation can be produced in the case of double aspheric lenses with an acceptable outlay as regards the surface processing and testing of the lens surfaces.

Abstract: A microlithographic projection exposure apparatus contains an illumination system (12) for generating projection light (13) and a projection lens (20; 220; 320; 420; 520; 620; 720; 820; 920; 1020; 1120) with which a reticle (24) that is capable of being arranged in an object plane (22) of the projection lens can be imaged onto a light-sensitive layer (26) that is capable of being arranged in an image plane (28) of the projection lens. The projection lens is designed for immersion mode, in which a final lens element (L5; L205; L605; L705; L805; L905; L1005; L1105) of the projection lens on the image side is immersed in an immersion liquid (34; 334a; 434a; 534a). A terminating element (44; 244; 444; 544; 644; 744; 844; 944; 1044; 1144) that is transparent in respect of the projection light (13) is fastened between the final lens element on the image side and the light-sensitive layer.

Abstract: A projection optical system comprises a plurality of lenses disposed along an optical axis of the projection optical system; wherein the plurality of lenses is dividable into four non-overlapping groups of lenses of positive and negative refractive powers, wherein the following relation is fulfilled: 2 · y · NA · 1 k · ? i = 1 k ? ? ? i ? ? V 1 wherein: y is half a diameter in mm of a maximum image field imaged by the projection optical system, NA is a maximum numerical aperture on a side of the second object, ?i is a refractive power in mm?1 of the ith lens, k is a total number of lenses of the projection optical system, and wherein V1 is greater than 0.045.

Abstract: A microlithographic projection exposure apparatus contains an illumination system (12) for generating projection light (13) and a projection lens (20; 220; 320; 420; 520; 620; 720; 820; 920; 1020; 1120) with which a reticle (24) that is capable of being arranged in an object plane (22) of the projection lens can be imaged onto a light-sensitive layer (26) that is capable of being arranged in an image plane (28) of the projection lens. The projection lens is designed for immersion mode, in which a final lens element (L5; L205; L605; L705; L805; L905; L1005; L1105) of the projection lens on the image side is immersed in an immersion liquid (34; 334a; 434a; 534a). A terminating element (44; 244; 444; 544; 644; 744; 844; 944; 1044; 1144) that is transparent in respect of the projection light (13) is fastened between the final lens element on the image side and the light-sensitive layer.

Abstract: A projection objective of a microlithographic projection exposure apparatus has a last optical element on the image side which is plane on the image side and which, together with an image plane of the projection objective, delimits an immersion space in the direction of an optical axis of the projection objective. This immersion space can be filled with an immersion liquid. At least one liquid or solid volume having plane-parallel interfaces can be introduced into the beam path of the projection objective, the optical thickness of the at least one volume being at least substantially equal to the optical thickness of the immersion space. By introducing and removing the volume, it is possible to convert the projection objective from dry operation to immersed operation in a straightforward way, without extensive adjustments to the projection objective or alignment work.

Abstract: A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with negative refractive power, a second lens group with positive refractive power, a third lens group with negative refractive power, a fourth lens group with positive refractive power and a fifth lens group with positive refractive power are provided. A constriction site of narrowest constriction of the beam bundle lies in the region of the waist. A waist distance AT exists between the object plane and the constriction site X. The condition AT/L?0.4 holds for a distance ratio AT/L between the waist distance AT and an object-image distance L of the projection objective. Embodiments of inventive projection objectives reach very high numerical apertures NA>1.1 in conjunction with a large image field and are distinguished by a compact overall size and good correction of the lateral chromatic aberration.

Abstract: In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.

Abstract: Refractive projection objective with a numerical aperture greater than 0.7, consisting of a first convexity, a second convexity, and a waist arranged between the two convexities. The first convexity has a maximum diameter denoted by D1, and the second convexity has a maximum diameter denoted by D2, and 0.8<D1/D2<1.1.

Abstract: A projection exposure apparatus for the exposure of a radiation-sensitive substrate arranged in the region of an image surface of a projection objective with at least one image of a pattern of a mask that is arranged in the region of an object surface of the projection objective has a light source for emitting ultraviolet light from a wavelength band having a bandwidth ??>10 pm around a central operating wavelength ?>200 nm; an illumination system for receiving the light from the light source and for directing illumination radiation onto the pattern of the mask; and a projection objective for the imaging of the structure of the mask onto a light-sensitive substrate.

Abstract: In a projection objective for imaging a pattern arranged in the object plane of the projection objective into the image plane of the projection objective, at least one optical component is provided which has a substrate in which at least one substrate surface is covered with an interference layer system having a great spatial modulation of the reflectance and/or of the transmittance over a usable cross section of the optical component, the modulation being adapted to a spatial transmission distribution of the remaining components of the projection objective in such a way that an intensity distribution of the radiation that is measured in a pupil surface has a substantially reduced spatial modulation in comparison with a projection objective without the interference layer system.

Abstract: A purely refractive projection objective suitable for immersion microlithography is designed as a single-waist system with five lens groups in the case of which a first lens group of negative refractive power, a second lens group of positive refractive power, a third lens group of negative refractive power, a fourth lens group of positive refractive power and a fifth lens group of positive refractive power are provided. The fourth lens group has an entrance surface (E) that lies in the vicinity of a point of inflection of a marginal ray height between the third lens group (LG3) and the fourth lens group (LG4). No negative lens of substantial refractive power is arranged between the entrance surface and the system diaphragm (5). Embodiments of inventive projection objectives achieve a very high numerical aperture NA>1 in conjunction with a large image field and are distinguished by a compact design size.

Abstract: A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |?|<1. The optical elements form a dry objective adapted with regard to aberrations to a gaseous medium with refractive index n?<1.01 filling an image space of finite thickness between an exit surface of the projection objective and the image surface. The optical elements include a largest lens having a maximum lens diameter Dmax and are configured to provide an image-side numerical aperture NA<1 in an effective image field having a maximum image field height Y?. With COMP=Dmax/(Y?·(NA/n?)2) the condition COMP<15.8 holds.

Abstract: A purely refractive projection objective suitable for immersion micro-lithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with a negative refracting power, a second lens group with a positive refracting power, a third lens group with a negative refracting power, a fourth lens group with a positive refracting power and a fifth lens group with a positive refracting power are provided. The system aperture is in the region of maximum beam diameter between the fourth and the fifth lens group. Embodiments of projection objectives according to the invention achieve a very high numerical aperture of NA>1 in conjunction with a large image field, and are distinguished by a good optical correction state and moderate overall size. Pattern widths substantially below 100 nm can be resolved when immersion fluids are used between the projection objective and substrate in the case of operating wavelengths below 200 nm.

Abstract: An optical imaging system for a microlithography projection exposure system is used for imaging an object field arranged in an object plane of the imaging system into an image field arranged in an image plane of the imaging system. A projection objective or a relay objective to be used in the illumination system can be involved, in particular. The imaging system has a plurality of lenses that are arranged between the object plane and the image plane and in each case have a first lens surface and a second lens surface. At least one of the lenses is a double aspheric lens where the first lens surface and the second lens surface is an aspheric surface. Lenses of good quality that have the action of an asphere with very strong deformation can be produced in the case of double aspheric lenses with an acceptable outlay as regards the surface processing and testing of the lens surfaces.

Abstract: A projection optical system comprises a plurality of lenses disposed along an optical axis of the projection optical system; wherein the plurality of lenses is dividable into four non-overlapping groups of lenses of positive and negative refractive powers, wherein the following relation is fulfilled: 2 · y · NA · 1 k · ? i = 1 k ? ? ? i ? ? V 1 wherein: y is half a diameter in mm of a maximum image field imaged by the projection optical system, NA is a maximum numerical aperture on a side of the second object, ?i is a refractive power in mm?1 of the ith lens, k is a total number of lenses of the projection optical system, and wherein V1 is greater than 0.045.

Abstract: Refractive projection objective with a numerical aperture greater than 0.7, consisting of a first convexity, a second convexity, and a waist arranged between the two convexities. The first convexity has a maximum diameter denoted by D1, and the second convexity has a maximum diameter denoted by D2, and 0.8<D1/D2<1.1.