Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.

Abstract: Disclosed are a power demand side speech interaction method and system. The method includes: obtaining original demand information, the original demand information including user's basic information, user demand information, and a user demand time; converting the original demand information into first information in text format; performing text statistical analysis based on an industry term on the first information in text format, to obtain second information; searching for corresponding user's actual information from a database according to the second information; outputting the user's actual information; searching for a corresponding forecasting model from the database, according to the second information and the user's basic information; calculating, according to a policy limit value of latest policy information in the database, a time for which the model corresponding to the user's basic information reaches the policy limit value; and transmitting an early warning message.

Abstract: Provided is a method and a system for transmitting information. The method is applicable to a processing device, and includes: acquiring a target image of a display device; determining a target area in the target image; and sending display information to the display device, wherein the display information includes information of the target area; wherein the target area is a partial pixel area of the target image, the target area includes pixels with transparencies less than 1, and transparencies of the pixels outside the target area in the target image are all 1.

Abstract: Methods and devices that include a multigate device having a channel layer disposed between a source feature and a drain feature, a metal gate that surrounds the channel layer, and a first air gap spacer interposing the metal gate and the source feature and a second air gap spacer interposing the metal gate and the drain feature. A backside contact extends to the source feature. A power line metallization layer is connected to the backside contact.

Abstract: Disclosed is a method of fabricating a contact in a semiconductor device. The method includes: receiving a semiconductor structure having an opening into which the contact is to be formed; forming a metal layer in the opening; forming a bottom anti-reflective coating (BARC) layer in the opening; performing implanting operations with a dopant on the BARC layer and the metal layer, the performing implanting operations including controlling an implant energy level and controlling an implant dosage level to form a crust layer with a desired minimum depth on top of the BARC layer; removing unwanted metal layer sections using wet etching operations, wherein the crust layer and BARC layer protect remaining metal layer sections under the BARC layer from metal loss during the wet etching operations; removing the crust layer and the BARC layer; and forming the contact in the opening over the remaining metal layer sections.

Abstract: A method including forming a III-V compound layer on a substrate and implanting a main dopant in the III-V compound layer to form source and drain regions. The method further includes implanting a group V species into the source and drain regions. A semiconductor device including a substrate and a III-V compound layer over the substrate. The semiconductor device further includes source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopants and a second dopant, and the second dopant comprises a group V material.

Abstract: A user equipment (UE) includes one or more non-transitory computer-readable media containing computer-executable instructions embodied therein, and at least one processor coupled to the one or more non-transitory computer-readable media. The at least one processor configured to execute the computer-executable instructions to receive downlink control information (DCI) on a downlink (DL) channel of a non-terrestrial network (NTN), the DL channel reception ending in a first slot, and transmit an uplink (UL) transmission on a UL channel of the NTN in a second slot. The second slot is separate from the first slot by a timing offset, where a duration of the timing offset is dependent on a type of the UL transmission and a numerology of the UL transmission.

Abstract: A method of wireless communication, by a user equipment (UE), includes receiving multiple neural network training configurations for channel state feedback (CSF). Each configuration corresponds to a different neural network framework. The method also includes training each of a group of neural network decoder/encoder pairs in accordance with the received training configurations. A method of wireless communication, by a base station, includes transmitting multiple neural network training configurations to a user equipment (UE) for channel state feedback (CSF). Each configuration corresponds to a different neural network framework. The method also includes receiving a neural network decoder/encoder pair trained in accordance with the training configurations.

Abstract: A connecting assembly is applied to connect a first housing and a second housing. The connecting assembly includes a general connecting member, a connecting base, and a clamping member. The general connecting member connects to the first housing. The general connecting member includes an accommodating portion and at least one opening. The accommodating portion is located inside the general connecting member. The opening is disposed on a side wall of the general connecting member and communicates with the accommodating portion. The connecting base is disposed on the second housing. The connecting base includes a main body disposed in the accommodating portion. The clamping member includes a flat portion and at least one clamping portion. The clamping portion extends from one end of the flat portion toward the connecting base, and the clamping portion passes through the opening and presses against the main body of the connecting base.

Abstract: A method for manufacturing a liquid crystal display panel and a liquid crystal display panel are provided. The method of manufacturing a liquid crystal display panel comprises the following steps: grinding the display device along a preset edge and removing the adhesive layer on a side of the preset edge away from a frame sealant, to obtain the liquid crystal display panel.

Abstract: A semiconductor device includes a semiconductor substrate, a first epitaxial feature having a first semiconductor material over the semiconductor substrate, and a second epitaxial feature having a second semiconductor material over the semiconductor substrate. The second semiconductor material being different from the first semiconductor material. The semiconductor device further includes a first silicide layer on the first epitaxial feature, a second silicide layer on the second epitaxial feature, a metal layer on the first silicide layer, a first contact feature over the metal layer, and a second contact feature over the second silicide layer. A first number of layers between the first contact feature and the first epitaxial feature is greater than a second number of layers between the second contact feature and the second epitaxial feature.

Abstract: Provided are a package structure having stacked semiconductor dies with wavy sidewalls and a method of forming the same. The package structure includes: a first die and a second die bonded together; a first encapsulant laterally encapsulating the first die; and a second encapsulant laterally encapsulating the second die, wherein a second interface of the second die in contact with the second encapsulant is a wavy interface in a cross-sectional plane.

Abstract: An implantable micro-biosensor a substrate, a first electrode, a second electrode, a third electrode, and a chemical reagent layer. The first electrode is disposed on the substrate and used as a counter electrode. The second electrode is disposed on the substrate and spaced apart from the first electrode. The third electrode is disposed on the substrate and used as a working electrode. The chemical reagent layer at least covers a sensing section of the third electrode so as to permit the third electrode to selectively cooperate with the first electrode or the first and second electrodes to measure a physiological signal in response to the physiological parameter of the analyte.

Abstract: Provided herein are systems and methods for enhancement of polyphenols, such as chlorogenic acids, chicoric acid, anthocyanins, and water-soluble quercetin derivatives, production in red lettuces. Also provided are transgenic lettuce for the production of polyphenols. Also provided are parts of such transgenic lettuces, such as seeds leaves, and extracts. The disclosure also provides methods of using the new lettuces and parts thereof for protection against viral/bacterial infection (i.e., by inhibiting activities of COVID-19 virus/enzymes) diabetes, cardiovascular diseases, memory and eyesight loss, inflammation, and cancer.

Abstract: Embodiments of the present disclosure relates to a semiconductor device structure. The structure includes a source/drain epitaxial feature disposed over a substrate, a first interlayer dielectric (ILD) disposed over the source/drain epitaxial feature, a second ILD disposed over the first ILD. The second ILD includes a first dopant species having an atomic radius equal to or greater than silicon and a second dopant species having an atomic mass less than 15. The structure also includes a first conductive feature disposed in the second ILD, and a second conductive feature disposed over the source/drain epitaxial feature, the second conductive feature extending through the first ILD and in contact with the first conductive feature.

Abstract: A method of selecting a group of multimode optical fibers, includes comparing a first effective modal bandwidth at a first wavelength of a multimode optical fiber with a first effective modal bandwidth threshold at the first wavelength, the multimode optical fiber being in a group of multimode optical fibers meeting a first OM standard, wherein the first wavelength is from 844 nm to 863 nm; and categorizing the multimode optical fiber as passing a transmission distance requirement if the first effective modal bandwidth of the first multimode optical fiber is greater than or equal to the first effective modal bandwidth threshold; wherein the transmission distance is defined in a transceiver specification, wherein the transceiver specification is one or more of: (a) an 800G bidirectional (BiDi) transceiver specification, or (b) a 100G/lane based MM VCSEL transceiver specification, or (c) a 25Gbaud based transceiver specification, or (d) 50G PAM4 based transceiver specification.

Abstract: Provided is a system for detecting an anomaly in a multivariate time series that includes at least one processor programmed or configured to receive a dataset of a plurality of data instances, wherein each data instance comprises a time series of data points, determine a set of target data instances based on the dataset, determine a set of historical data instances based on the dataset, generate, based on the set of target data instances, a true value matrix, a true frequency matrix, and a true correlation matrix, generate a forecast value matrix, a forecast frequency matrix, and a forecast correlation matrix based on the set of target data instances and the set of historical data instances, determine an amount of forecasting error, and determine whether the amount of forecasting error corresponds to an anomalous event associated with the dataset of data instances. Methods and computer program products are also provided.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a plurality of semiconductor layers having a first group of semiconductor layers, a second group of semiconductor layers disposed over and aligned with the first group of semiconductor layers, and a third group of semiconductor layers disposed over and aligned with the second group of semiconductor layers. The structure further includes a first source/drain epitaxial feature in contact with a first number of semiconductor layers of the first group of semiconductor layers and a second source/drain epitaxial feature in contact with a second number of semiconductor layers of the third group of semiconductor layers. The first number of semiconductor layers of the first group of semiconductor layers is different from the second number of semiconductor layers of the third group of semiconductor layers.

Abstract: Semiconductor devices and methods are provided. A semiconductor device according to the present disclosure includes a first transistor having a first gate dielectric layer, a second transistor having a second gate dielectric layer, and a third transistor having a third gate dielectric layer. The first gate dielectric layer includes a first concentration of a dipole layer material, the second gate dielectric layer includes a second concentration of the dipole layer material, and the third gate dielectric layer includes a third concentration of the dipole layer material. The dipole layer material includes lanthanum oxide, aluminum oxide, or yittrium oxide. The first concentration is greater than the second concentration and the second concentration is greater than the third concentration.