Abstract: A package structure includes a bonding substrate, an integrated circuit, and a heat sink metal. The integrated circuit includes an active region facing the bonding substrate. The heat sink metal is located between the bonding substrate and the active region of the integrated circuit. The heat sink metal is electrically insulated with the integrated circuit.

Abstract: Microelectromechanical devices and methods of manufacture are presented. Embodiments include bonding a mask substrate to a first microelectromechanical system (MEMS) device. After the bonding has been performed, the mask substrate is patterned. A first conductive pillar is formed within the mask substrate, and a second conductive pillar is formed within the mask substrate, the second conductive pillar having a different height from the first conductive pillar. The mask substrate is then removed.

Abstract: The present disclosure is directed to techniques of zone-based target control in chemical mechanical polishing of wafers. Multiple zones are identified on a surface of a wafer. The CMP target is achieved on each zone in a sequence of CMP processes. Each CMP process in the sequence achieves the CMP target for only one zone, using a CMP process selective to other zones.

Abstract: An image sensing device and a control device of an illumination device thereof are provided. The control device includes a control circuit, an operation circuit, and multiple driving signal generators. The control circuit generates multiple control signals. The operation circuit performs a logical operation on the control signals and an image capturing signal to generate multiple operation results. The driving signal generator respectively provides multiple driving signals to the illumination device according to the operation results, and the driving signals respectively have multiple different output powers.

Abstract: A semiconductor device includes a first contact layer, a second contact layer, an active layer, a photonic crystal layer, a passivation layer, a first electrode and a second electrode. The first contact layer has a first surface and a second surface opposite to each other. Microstructures are located on the second surface. The second contact layer is located below the first surface. The active layer is located between the first contact layer and the second contact layer. The photonic crystal layer is located between the active layer and the second contact layer. The passivation layer is located on the second contact layer. The first electrode is located on the passivation layer and is electrically connected the first surface of the first contact layer. The second electrode is located on the passivation layer and is electrically connected to the second contact layer.

Abstract: A display device includes a first substrate, a plurality of light-emitting diodes, a first wavelength conversion layer and a metasurface. The light-emitting diodes are arranged on the first substrate, in which the light-emitting diodes emit a first color light, and the light-emitting diodes includes a first light-emitting diode, a second light-emitting diode and a third light-emitting diode. The first wavelength conversion layer is on the first light-emitting diode, and configured to convert the first color light emitted from the first light-emitting diode into a second color light, in which the second color light is different from the first color light. The metasurface is above the first wavelength conversion layer, and configured to reflect the first color light and pass the second color light.

Abstract: A protection layer for use in fabrication of failure analysis (FA) sample is disclosed, which principally comprises a first thin film, a buffer thin film and a second thin film By forming the protection layer on a surface of a malfunction device die, a FA sample of the malfunction device die is obtained. As a result, in the case of treating the sample with a FIB thinning process, there are no cracks, distortion, and/or collapse resulted from inter-elemental isobaric interferences, stress effect or charge accumulation occurring on the surface layer of the malfunction device die because of the protection of the protection layer. On the other hand, this protection layer can also be applied to a microLED element or a VCSEL element, so as to make microLED element and the VCSEL element possess excellent stress withstanding capability.

Abstract: A micro LED display device includes a light emitting layer, a color conversion layer located on a light emitting surface of the light emitting layer, and a Bragg reflection element located on the color conversion layer. The Bragg reflection element includes a plurality of layer pairs. Each of the layer pairs includes at least one first layer and at least one second layer alternately stacked. The layer pairs include a top layer pair, a bottom layer pair and a plurality of middle layer pairs between the top layer pair and the bottom layer pair. A thickness of the first layer of each of the middle layer pairs is smaller than a thickness of the second layer of each of the middle layer pairs. A refractive index of the first layer is greater than a refractive index of the second layer.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A base region is formed in a substrate. A protective layer is formed on the substrate and covers the base region. First and second sacrificial layers are formed on the substrate and cover the protective layer. A source region, a well region, and a junction field effect transistor (JFET) region are formed in the substrate. When the source region, the well region, and the JFET region are formed in sequence, the source region and the well region are formed by the first sacrificial layer, and the JFET region is formed by the second sacrificial layer. When the JFET region, the well region, and the source region are formed in sequence, the JFET region is formed by the first sacrificial layer, and the well region and the source region are formed by the second sacrificial layer.

Abstract: A method of manufacturing a light-emitting device includes a number of operations. A light-emitting element is formed. A simulation of a metasurface is performed. The metasurface is formed based on the simulation of the metasurface. The metasurface is disposed on a light-emitting side of the light-emitting element. Performing the simulation of the metasurface includes establishing a metasurface model of the metasurface, in which the metasurface model has a plurality of unit cells, and phase compensation values of the unit cells are periodically distributed with a supercell period length in a deflection direction. The phase compensation values of the unit cell are adjusted and the light source is set to simulate the multiple transmittances of the metasurface model under different phase compensation values. The phase compensation values at a peak value of transmittance are selected as process parameters of the metasurface.

Abstract: A method for acquiring shadow-free images of a document for scanning or other purposes is applied in a device. The method includes training a shadow prediction model based on sample documents of a sample library and inputting a background color and a shadow mask of each of the sample documents extracted by the shadow prediction model into a predetermined shadow removing network for training, to obtain a shadow removing model. The method further includes obtaining a background color and a shadow mask of the document through the shadow prediction model and removing the shadows of the document based on the shadow removing model. The device utilizing the method is also disclosed.

Abstract: A method of forming a semiconductor device includes forming a P-type heavily doped region in a substrate. A sacrificial layer is formed on the substrate and covers the P-type heavily doped region. The sacrificial layer is patterned, so that sidewalls of the sacrificial layer are above the substrate inside the P-type heavily doped region. An N-type heavily doped region adjacent to the P-type heavily doped region is formed in the substrate by using the sacrificial layer as mask. A wet etching process is performed to retract the sidewalls of the sacrificial layer to the substrate inside the N-type heavily doped region. A P-type lightly doped region is formed in the substrate by using the sacrificial layer as mask. The P-type lightly doped region is adjacent to the N-type heavily doped region, and is in contact with bottoms of the P-type heavily doped region and the N-type heavily doped region.

Abstract: A nanocrystal array, a laser device, and a display device are provided. The nanocrystal array includes a plurality of nanorods arranged in an array. Each nanorod includes a nanorod buffer layer, a first type semiconductor layer, a tunnel junction layer, a second type semiconductor layer, a multi-quantum well, and another first type semiconductor layer successively stacked on each other. The laser device and the display device include the nanocrystal array. The present disclosure may reduce the laser threshold and increase output power, and further improve the resolution and image quality of the display device.

Abstract: The invention discloses a method of isolating nucleic acid and the system thereof, which relates to the following process: (1) providing a biological sample containing cells; (2) performing a cell concentration procedure; (3) performing a magnetic separation procedure through a magnetic separation unit; (4) performing a suspension procedure through a suspending unit; (5) performing a lysis procedure through a lysis unit; and (6) performing a nucleic acid extraction procedure to extract the nucleic acids from the biological samples; wherein the cell concentration procedure does not involve any means of centrifugation. Therefore, the method is simple and efficient, and it is particularly favorable in full automation of nucleic acid isolation. Furthermore, the method and the system as a whole further include a clarification procedure executed by a clarification unit without using centrifugation means, so that improves the quality of nucleic acid isolation.

Abstract: A composite material fabrication method includes stacking a plurality of fiber layers and a first binder and curing the first binder to form a three-dimensional structure with a plurality of mesh openings, and filling the plurality of mesh openings with a plurality of fiber filaments of a fiber array and a second binder and curing the second binder. A plurality of first mesh openings of the plurality of mesh openings are connected in a first direction.

Abstract: A photonic crystal surface-emitting laser device includes a substrate, a light emitting layer located on a surface of the substrate, a photonic crystal layer located on a side of the light emitting layer facing away from the substrate, and a metasurface located on a side of the substrate facing away from the photonic crystal layer. The light emitting layer is configured to generate photons. The photons incident into the photonic crystal layer generate laser light through a vibration on Bragg diffraction. The metasurface includes a base and a plurality of pillars arranged on a surface of the base at intervals, at least two of the plurality of pillars have different shapes and/or different sizes. The metasurface is configured to receiving the laser light, diffracting the laser light and then emitting the laser light. An optical system having the photonic crystal surface-emitting laser device is also provided.

Abstract: A photonic crystal surface-emitting laser includes a light emitting module and a driving module. The light emitting module includes a photonic crystal layer, an active light emitting layer on a side of the photonic crystal layer, a first electrode on a side of the active light emitting layer facing away from the photonic crystal layer, and a second electrode partially on the side of the active light emitting layer facing away from the photonic crystal layer. The driving module makes electrical contact with surfaces of the first electrode and the second electrode facing away from the photonic crystal layer. The driving module outputs driving signals to the first electrode and the second electrode to drive the active light emitting layer to generate photons. The photons are incident into the photonic crystal layer to generate a laser light through oscillation on Bragg diffraction. An optical system is also disclosed.

Abstract: A method for recognition of characters by optical means in an unclear or non-optimal image of an object document, the image carrying shadows or other impediments inputs the document into a shadow prediction model to obtain a shadow mask. A determination is made as to whether the shadow mask of the document affect an optical character recognition (OCR) performance. The method further inputs the document into a shadow removing model for removal of shadows to obtain an intermediate document if the shadow mask are deemed to affect the OCR performance, then OCR can then be performed on the final object document.

Abstract: Sensor-integrated prosthetic valves that can comprise a variety of features, including a plurality of valve leaflets, a frame assembly configured to support the plurality of valve leaflets and define a plurality of commissure supports terminating at an outflow end of the prosthetic valve, a sensor device associated with the frame assembly and configured to generate a sensor signal, for example, a sensor signal indicating deflection of one or more of the plurality of commissure supports, and a transmitter assembly configured to receive the sensor signal from the sensor device and wirelessly transmit a transmission signal that is based at least in part on the sensor signal.

Abstract: A radio frequency (RF) receiver includes a radiating element, a chip and a phase shifting circuit. The radiating element is arranged to receive an RF input signal to produce a plurality of electrical signals. The chip includes an amplifier circuit. The amplifier circuit is configured to receive a plurality of phase shifted signals from a plurality of input terminals respectively, and amplify the phase shifted signals to generate an RF output signal. The phase shifting circuit is located outside the chip, and coupled to the output terminals and the input terminals. The phase shifting circuit is arranged to phase shift the electrical signals and accordingly generate the phase shifted signals. The phase shifting circuit and the radiating element are formed on a same substrate.