Abstract: A memory includes a memory array and a single-ended sense amplifier circuit. The memory array includes wordlines, bitlines, and memory cells. The bitlines include a first bitline, routed on a first metal layer but not a second metal layer, and a second bitline, routed on the first metal layer and the second metal layer. Each of the memory cells is coupled to one of the wordlines. The memory cells include a first group of memory cells, coupled to the first bitline, and a second group of memory cells, coupled to the second bitline, where the first group of memory cells and the second group of memory cells are located at a same column. The single-ended sense amplifier circuit performs a read operation upon a target memory cell through single-ended sensing when a selected wordline is enabled.

Abstract: Provided are transaminase mutants and uses thereof. The transaminase mutant is obtained by one or more amino acid mutations occurring in SEQ ID NO: 2 or is a mutant with a conserved amino acid mutation obtained by taking the sequence SEQ ID NO: 1 of a wild-type CvTA transaminase as a reference. Compared with wild-type transaminases, the catalytic activity of the mutant is improved to different degrees, so that the production efficiency of chiral amine compound synthesis may be improved.

Abstract: The present disclosure describes a semiconductor device with a fill structure. The semiconductor structure includes first and second fin structures on a substrate, an isolation region on the substrate and between the first and second fin structures, a first gate structure disposed on the first fin structure and the isolation region, a second gate structure disposed on the second fin structure and the isolation region, and the fill structure on the isolation region and between the first and second gate structures. The fill structure includes a dielectric structure between the first and second gate structures and an air gap enclosed by the dielectric structure. The air gap is below top surfaces of the first and second fin structures.

Abstract: Provided is a method for synthesizing a chiral amine compound. A transaminase is used to transaminate a ketone substrate under the action of an amino donor, to obtain the chiral amine compound; and the conserved amino acid sequence region of the transaminase at least includes a region 1 (MAGLWCVN) and a region 2 (YNTFFKT). With the transaminase with the specific conserved amino acid sequence region to synthesize a large sterically hindered chiral amine, the enzyme catalytic reaction volume is small, the synthesizing route is short, the product yield is high, a high-cost noble metal is not required for catalysis under the synthesizing conditions, three wastes are reduced, and the production cost is saved.

Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.

Abstract: Provided are a continuous post-treatment method and device for a penem compound. The method includes the following steps: S1, performing continuous extraction on a reaction crude product of a penem compound, to obtain an extraction heavy phase and an extraction light phase; S2, performing continuous solid-liquid separation on the extraction heavy phase, to obtain a liquid phase separation product; S3, performing continuous pH adjustment on the liquid phase separation product until a pH value thereof is 6.1-6.3, to obtain pH-adjusted solution; and S4, performing continuous crystallization treatment on the pH-adjusted solution by a first crystallization solvent, to obtain a penem compound product. The use of the method for the post-treatment of the reaction crude product of the penem compound has the advantages of high treatment speed and high efficiency, and stable material properties and a low deterioration rate during the treatment, and has better control over the yield and purity of a target product.

Abstract: A transaminase mutant and use hereof, the amino acid sequence of the transaminase mutant is an amino acid sequence in which the amino acid sequence as represented by SEQ ID NO: 1 is mutated, the mutated amino acid position being one or more selected from among F89, K193, P243, V234, I262, Q280, V379, R416, A417 and C418. The enzymatic activity and/or stability of the transaminase mutant is improved.

Abstract: This invention discloses a medicinal composition includes a non-coding RNA molecule and an antibody targeting a tumor antigen for preventing and/or treating cancer. This invention uses the synergistic combination of a non-coding RNA molecule or its functional variant or homologue, and an antibody targeting a tumor antigen to prevent and/or treat cancer, thereby providing a novel and effective method in preventing and/or treating various cancers.

Abstract: A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion of the dielectric layer is planarized by chemical mechanical polishing (CMP) to remove a topography of the dielectric layer. The hard mask and a second portion of the dielectric layer are removed by the CMP.

Abstract: A pseudo multi-port memory includes a memory array, a row decoder circuit, a timing controller circuit, a sense amplifier circuit, and a write driver circuit. The timing controller circuit outputs a timing control signal to the row decoder circuit, wherein during one memory clock cycle, the row decoder circuit is controlled by the timing control signal to make a read wordline (RWL) signal have an enable pulse and a write wordline (WWL) signal have multiple enable pulses. During one memory clock cycle, the sense amplifier circuit performs read operations upon a selected memory cell when the selected RWL is enabled by the enable pulse and the selected WWL is enabled by at least one first enable pulse, and the write driver circuit performs a write operation upon the selected memory cell when the selected WWL is enabled by one second enable pulse.

Abstract: Provided is an anesthetic composition for locally administering a local anesthetic agent to a subject in need thereof. The anesthetic composition has a lipid based complex prepared by hydrating a lipid cake containing a local anesthetic agent and a lipid mixture with an aqueous buffer solution at a pH higher than 5.5. Also provided is a method to prepare an anesthetic composition using a simpler and more robust for large-scale manufacture and for providing a high molar ratio of local anesthetic agent to phospholipid content as compared to the prior art. This anesthetic composition has a prolonged duration of efficacy adapted to drug delivery.

Abstract: The present disclosure provides a DIDT control method. The method includes, at each of a plurality of DIDT control modules: obtaining a local operation load of a local ALU in each clock cycle; obtaining a global operation load of a plurality of ALUs in each cycle period; determining an operation load index of the local ALU based on local historical load information and a local historical load weight set of the local ALU and global historical load information and a global historical load weight set of the multiple ALUs, the global historical load information includes a first number of the global operation loads, the local historical load information includes a second number of the local operation loads; and adjusting an operation load of the local ALU based on the operation load index of the local ALU and a predetermined load threshold to control a DIDT of the local ALU.

Abstract: Provided are an esterase mutant and use thereof. The amino acid sequence of the esterase mutant has a sequence as shown in SEQ ID NO: 1, and sites at which amino acid mutations occur include an N51G site.

Abstract: Provided are an amino acid dehydrogenase mutant and use thereof. The amino acid sequence of the amino acid dehydrogenase mutant has a sequence as shown in SEQ ID NO: 1, and sites at which amino acid mutations occur include a K144G site.

Abstract: A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.

Abstract: Provided are a solar photovoltaic panel assembly and a vehicle including the solar photovoltaic panel assembly. The solar photovoltaic panel assembly includes: a support frame having a primary photovoltaic panel mounting layer and a secondary photovoltaic panel sliding layer that are laminated to each other; a primary photovoltaic panel mounted on the primary photovoltaic panel mounting layer; a secondary photovoltaic panel; and a driving member. The secondary photovoltaic panel is slidably movable along the secondary photovoltaic panel sliding layer to a storage position at which the secondary photovoltaic panel has a maximum overlapping area with the primary photovoltaic panel and an expansion position at which the secondary photovoltaic panel slidably moves outwards relative to the primary photovoltaic panel. The driving member is mounted on the support frame and configured to drive the secondary photovoltaic panel to slidably move along the secondary photovoltaic panel sliding layer.

Abstract: Certain aspects of the present disclosure provide a method of wireless communications at a wireless node, comprising measuring one or more radio frequency (RF) performance parameters at the wireless node and tuning one or more transmission parameters based on the measurement.

Abstract: The present disclosure provides a bolometer including a substrate, a reflecting mirror on the substrate, and a temperature sensing unit above the reflecting mirror. The temperature sensing unit includes a first insulating layer, a thermistor on the first insulating layer, a second insulating layer on the thermistor, an electrode layer in the second insulating layer and right above the thermistor, and a metal meta-surface in the second insulating layer and right above the electrode layer. The electrode layer includes a plurality of electrodes separated from each other. A projection region of the metal meta-surface on the thermistor is equal to or larger than the thermistor.

Abstract: In an embodiment, a device includes: a first integrated circuit die comprising a semiconductor substrate and a first through-substrate via; a gap-fill dielectric around the first integrated circuit die, a surface of the gap-fill dielectric being substantially coplanar with an inactive surface of the semiconductor substrate and with a surface of the first through-substrate via; a dielectric layer on the surface of the gap-fill dielectric and the inactive surface of the semiconductor substrate; a first bond pad extending through the dielectric layer to contact the surface of the first through-substrate via, a width of the first bond pad being less than a width of the first through-substrate via; and a second integrated circuit die comprising a die connector bonded to the first bond pad.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.