Abstract: The present invention provides an oscillator which is based on a 6T SRAM for measuring the Bias Temperature Instability. The oscillator includes a first control unit, a first inverter, a second control unit, and a second inverter. The first control unit is coupled with the first inverter. The second control unit is coupled with the second inverter. The first control unit and the second control unit is used to control the first inverter and the second inverter being selected, biased, and connected respectively, so that the NBTI and the PBTI of the SRAM can be measured separately, and the real time stability of the SRAM can be monitored immediately.

Abstract: A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.

Abstract: A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.

Abstract: A SRAM that keeps the memory cell array under a low voltage in the Standby mode and Write mode, and raises the memory cell array supply voltage to a high voltage in the Read mode. A SRAM comprising: at least one memory cell circuit, comprising a latch circuit with at least two inverters, and comprising two power receiving terminals for receiving power; and a power supplying circuit, for providing the power to the memory cell circuit, such that the voltages at the power receiving terminals of the latch circuit is below a predetermined voltage level when data is written to the latch circuit. In one embodiment, the memory cell circuit includes a plurality of data accessing terminals and the data accessing terminals are respectively controlled by at least two pass-transistor switch devices.

Abstract: A static random access memory apparatus and a bit-line voltage controller thereof are disclosed. The bit-line voltage controller includes a controller, a pull-up circuit, a pull-down circuit and a voltage keeping circuit. The controller receives a bank selecting signal and a clock signal, and decides a pull-up time period, a pull-down time period and a voltage keeping time period according to the bank selecting signal and the clock signal. The pull-up circuit pulls up a bit-line power according to a first reference voltage within the pull-up time period. The pull-down circuit pulls down the bit-line power according to a second reference voltage within the pull-down time period. The voltage keeping circuit keeps the bit-line power to equal to an output voltage during the voltage keeping time period. The voltage keeping time period is after the pull-up time period and the pull-down time period.

Abstract: The present invention provides an oscillator which is based on a 6T SRAM for measuring the Bias Temperature Instability. The oscillator includes a first control unit, a first inverter, a second control unit, and a second inverter. The first control unit is coupled with the first inverter. The second control unit is coupled with the second inverter. The first control unit and the second control unit is used to control the first inverter and the second inverter being selected, biased, and connected respectively, so that the NBTI and the PBTI of the SRAM can be measured separately, and the real time stability of the SRAM can be monitored immediately.

Abstract: The present invention provides a 6T SRAM including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor. The first inverter zs a first pull-up transistor and a first pull-down transistor. The second inverter includes a second pull-up transistor and a second pull-down transistor. The gate of the second pull-up transistor is coupled with the gate of the second pull-down transistor, and the drain of the second pull-up transistor is coupled with the drain of the second pull-down transistor. The SRAM can measure the trip voltage, the read disturb voltage, and the write margin by controlling the first bit line, the second bit line, the GND, the first word line, and the voltage source without changing of the physic parameter of the SRAM.

Abstract: An innovative dual-port subthreshold static random access memory (SRAM) cell for sub-threshold voltage operation is disclosed. During write mode, the dual-port subthreshold SRAM cell would cut off the positive feedback loop of the inverters and utilize the reverse short-channel effect to enhance write capability. The single-ended read/write port structure further reduces power consumption of the lengthy bit line. Therefore, the dual-port subthreshold SRAM cell is a suitable for long operation in a first-in first-out memory system. Although the lower voltage reduces the stability of the memory cell, the dual-port subthreshold SRAM cell of the present invention can still stably operate.

Abstract: A static random access memory cell includes a latch unit. The latch unit includes a bi-inverting circuit and a switching circuit. The bi-inverting circuit has a first terminal and a second terminal. The switching circuit is electrically connected between the first terminal and the second terminal, wherein when the switching circuit is turned on, the switching circuit forms a feedback between the first terminal and the second terminal for latching the latch unit; and when the switching circuit is turned off, the feedback is removed to cause the SRAM cell to write a data bit to the latch unit.

Abstract: The present invention proposes a gate oxide breakdown-withstanding power switch structure, which is connected with an SRAM and comprises a first CMOS switch and a second CMOS switch respectively having different gate-oxide thicknesses or different threshold voltages. The CMOS switch, which has a normal gate-oxide thickness or a normal threshold voltage, provides current for the SRAM to wake up the SRAM from a standby or sleep mode to an active mode. The CMOS switch, which has a thicker gate-oxide thickness or a higher threshold voltage, provides current for the SRAM to work in an active mode. The present invention prevents a power switch from gate-oxide breakdown lest noise margin, stabilization and performance of SRAM be affected.

Abstract: A Random Access Memory (RAM) with a plurality of cells is provided. In an embodiment, the cells of a same column are coupled to a same pair of bit-lines and are associated to a same power controller. Each cell has two inverters; the power controller has two power-switches. For the cells of the same column, the two power-switches respectively perform independent supply voltage controls for the two inverters in each cell according to data-in voltages of the bit-lines during Write operation.

Abstract: An innovative dual-port subthreshold static random access memory (SRAM) cell for sub-threshold voltage operation is disclosed. During write mode, the dual-port subthreshold SRAM cell would cut off the positive feedback loop of the inverters and utilize the reverse short-channel effect to enhance write capability. The single-ended read/write port structure further reduces power consumption of the lengthy bit line. Therefore, the dual-port subthreshold SRAM cell is a suitable for long operation in a first-in first-out memory system. Although the lower voltage reduces the stability of the memory cell, the dual-port subthreshold SRAM cell of the present invention can still stably operate.

Abstract: A static random access memory with data controlled power supply, which comprises a memory cell circuit and at least one Write-assist circuit, for providing power to the memory cell circuit according to data to be written to the memory cell circuit.

Abstract: A static random access memory cell includes a latch unit. The latch unit includes a bi-inverting circuit and a switching circuit. The bi-inverting circuit has a first terminal and a second terminal. The switching circuit is electrically connected between the first terminal and the second terminal, wherein when the switching circuit is turned on, the switching circuit forms a feedback between the first terminal and the second terminal for latching the latch unit; and when the switching circuit is turned off, the feedback is removed to cause the SRAM cell to write a data bit to the latch unit.

Abstract: A disturb-free static random access memory cell includes: a latch circuit having a first access terminal and a second access terminal; a first switching circuit having a first bit transferring terminal coupled to the first access terminal, a first control terminal coupled to a first write word line, and a second bit transferring terminal; a second switching circuit having a third bit transferring terminal coupled to the second access terminal, a second control terminal coupled to a second write word line, and a fourth bit transferring terminal coupled to the second bit transferring terminal; a third switching circuit having a fifth bit transferring terminal coupled to the fourth bit transferring terminal, a third control terminal coupled to a word line, and a sixth bit transferring terminal coupled to a bit line; and a sensing amplifier coupled to the bit line, for determining a bit value appearing at the bit line.

Abstract: The present invention proposes a gate oxide breakdown-withstanding power switch structure, which is connected with an SRAM and comprises a first CMOS switch and a second CMOS switch respectively having different gate-oxide thicknesses or different threshold voltages. The CMOS switch, which has a normal gate-oxide thickness or a normal threshold voltage, provides current for the SRAM to wake up the SRAM from a standby or sleep mode to an active mode. The CMOS switch, which has a thicker gate-oxide thickness or a higher threshold voltage, provides current for the SRAM to work in an active mode. The present invention prevents a power switch from gate-oxide breakdown lest noise margin, stabilization and performance of SRAM be affected.

Abstract: A Random Access Memory (RAM) with a plurality of cells is provided. In an embodiment, the cells of a same column are coupled to a same pair of bit-lines and are associated to a same power controller. Each cell has two inverters; the power controller has two power-switches. For the cells of the same column, the two power-switches respectively perform independent supply voltage controls for the two inverters in each cell according to data-in voltages of the bit-lines during Write operation.

Abstract: A static random access memory with data controlled power supply, which comprises a memory cell circuit and at least one Write-assist circuit, for providing power to the memory cell circuit according to data to be written to the memory cell circuit.

Abstract: A SRAM that keeps the memory cell array under a low voltage in the Standby mode and Write mode, and raises the memory cell array supply voltage to a high voltage in the Read mode. A SRAM comprising: at least one memory cell circuit, comprising a latch circuit with at least two inverters, and comprising two power receiving terminals for receiving power; and a power supplying circuit, for providing the power to the memory cell circuit, such that the voltages at the power receiving terminals of the latch circuit is below a predetermined voltage level when data is written to the latch circuit. In one embodiment, the memory cell circuit includes a plurality of data accessing terminals and the data accessing terminals are respectively controlled by at least two pass-transistor switch devices.

Abstract: A disturb-free static random access memory cell includes: a latch circuit having a first access terminal and a second access terminal; a first switching circuit having a first bit transferring terminal coupled to the first access terminal, a first control terminal coupled to a first write word line, and a second bit transferring terminal; a second switching circuit having a third bit transferring terminal coupled to the second access terminal, a second control terminal coupled to a second write word line, and a fourth bit transferring terminal coupled to the second bit transferring terminal; a third switching circuit having a fifth bit transferring terminal coupled to the fourth bit transferring terminal, a third control terminal coupled to a word line, and a sixth bit transferring terminal coupled to a bit line; and a sensing amplifier coupled to the bit line, for determining a bit value appearing at the bit line.