Abstract: A failure of a first memory access operation is detected at a memory device. Responsive to the detection, a first error control operation and a second error control operation are performed. In response to a determination that the second error control operation has remedied the failed first memory access operation, the second error control operation is associated with a second priority which is higher than a first priority associated with the first error control operation.

Abstract: Read operations can be performed to read data stored at a data block. Parameters reflective of a separation between a pair of programming distributions associated with the data block can be determined based on the plurality of read operations. A read request to read the data stored at the data block can be received. In response to receiving the read request, a read operation can be performed to read the data stored at the data block based on the parameters that are reflective of the separation between the pair of programming distributions associated with the data block.

Abstract: A blockchain-based multi-merchant loyalty point partnership system may include a blockchain API host that receives a request to create a partnership smart contract for a multi-merchant loyalty point partnership. The request may specify various partnership parameters to include in the partnership smart contract. The blockchain API host may create the partnership smart contract and write the partnership smart contract to a blockchain. One or more qualified merchants may join the partnership smart contract to make the partnership active. In response to a customer completing a plurality of purchases that complete the partnership parameters of the partnership smart contract, the system may issue the customer a purchase reward which may include a loyalty point payout.

Abstract: A processing device, operatively coupled with the memory device, is configured to determine a first error rate associated a first set of pages of a plurality of pages of a data unit of a memory device, and a second error rate associated with a second set of pages of the plurality of pages of the data unit, determine a first pattern of error rate change for the data unit based on the first error rate and the second error rate, and responsive to determining that the first pattern of error rate change corresponds to a predetermined second pattern of error rate change, perform an action pertaining to defect remediation with respect to the data unit.

Abstract: A consumer may enroll in an event gamification system. An event listener may detect an event. The event gamification system may determine that the event qualifies for a game in which the consumer is enrolled. The event gamification system may transmit an achievement notification to the consumer as soon as the event occurs. The game may be displayed in a GUI on a consumer device. The consumer may be rewarded for completing the achievements in the game. Also, a server computer receiving a plurality of data sets that represent visually perceptible elements for a plurality of host web pages, wherein each of the plurality of host web pages displays an active link associated with a product on a merchant web page. The server automatically generating composite web page from: i) the particular data set associated with the particular host web page and the particular set of visually perceptible elements and ii) the related electronic content associated with the product from the merchant web page.

Abstract: Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including performing a first data integrity check on memory pages of a first set of wordlines of the memory device; performing a second data integrity check on memory pages of a second set of wordlines comprising a plurality of wordlines from the first set of wordlines; identifying, among the first set of wordlines and the second set of wordlines, a wordline having a first data state metric value obtained from the first data integrity check equal to a second data state metric value obtained from the second data integrity check; and performing a third data integrity check on a third set of wordlines comprising at least one wordline from the first set of wordlines, wherein the third data integrity check excludes the identified wordline.

Abstract: A method includes obtaining a first operation execution time corresponding to an operation performed on a page of a first data unit of a memory device, determining whether the first operation execution time satisfies a condition that is based on a second operation execution time, wherein the second operation execution time is indicative of lack of defect in at least a second data unit of the memory device, and responsive to determining that the first operation execution time satisfies the condition that is based on the second operation execution time, initiating a defect scan operation of at least a subset of pages of the first data unit.

Abstract: A processing device, operatively coupled with a memory device, is configured to perform a write operation on a page of a plurality of pages of a data unit of a memory device. The processing device further generates a parity page for data stored in the page of the data unit and associates the parity page with parity data associated with the data unit. Responsive to determining that a first size of the parity data is larger than a first threshold size, the processing device compresses the parity data. Responsive to determining that a second size of the compressed parity data is larger than a second threshold size, the processing device releases at least a subset of the parity data corresponding to a subset of the data that is free from defects.

Abstract: A request to perform a secure erase operation for a memory component can be received. A voltage level of a pass voltage that is applied to unselected wordlines of the memory component during a read operation can be determined. A voltage pulse can be applied during a program operation to at least one wordline of the memory component to perform the secure erase operation. The voltage pulse can exceed the pass voltage applied to the unselected wordlines of the memory component during the read operation.

Abstract: A trigger rate associated with a scan operation of a set of memory pages of a data block is identified. The trigger rate is compared to a threshold rate to determine that a condition is satisfied. In response to satisfying the condition, a refresh operation is executed on the set of memory pages of the data block.

Abstract: Storage devices include a memory array comprised of a plurality of memory devices. These memory devices are programmed with a modified distribution across the available memory states within the devices. The modified distribution of memory states attempts to minimize the use of memory states that are susceptible to negative effects. These negative effects can include read and write disturbs as well as data retention errors. Often, these negative effects occur on memory states on the lower and upper states within the voltage threshold range of the memory device. The distribution of memory states can be modified though the use of a modified randomization seed configured to change the probabilities of programming of each page within the memory device. This modification of the randomization seed can yield desired distribution of memory device states that are configured to reduce exposure to negative effects thus prolonging the overall lifespan of the storage device.

Abstract: A processing device, operatively coupled with a memory device, is configured to perform a write operation on a page of a plurality of pages of a data unit of a memory device, to store host data in the page of the data unit. The processing device further generates a parity page for the host data stored in the page of the data unit and adds the parity page to parity data stored at a parity data storage location. Responsive to determining that a first size of the stored parity data satisfies a first condition, the processing device initiates execution of a compression algorithm to compress the stored parity data. Responsive to determining that a second size of the parity data resulting from the execution of the compression algorithm satisfies a second condition, the processing device performs a scan operation to release at least a subset of the stored parity data.

Abstract: A request to perform a secure erase operation for a memory component can be received. A voltage level that is applied to unselected wordlines of the memory component during a read operation can be determined. A voltage pulse can be applied to at least one wordline of the memory component to perform the secure erase operation. The voltage pulse can be associated with a program operation to place a memory cell of the memory component at another voltage level that exceeds the voltage level that is applied to the unselected wordlines of the memory component during the read operation.

Abstract: A distribution statistic is generated for a data block of a memory component based on a reliability statistic for memory cells sampled in the data block. The distribution statistic is indicative of at least one of a uniformity or a non-uniformity of read disturb stress on the sampled memory cells. At least a subset of the data block is relocated to another data block of the memory component in view of the distribution statistic.

Abstract: A first scan operation of a set of memory pages of a data block is performed using a first reliability threshold level to identify a set of scan results. A workload type associated with the data block is determined based on the set of scan results. The first reliability threshold level is adjusted to a second reliability threshold level based on the workload type. A second scan operation of the set of memory pages of the data block is performed using the second reliability threshold level.

Abstract: A processing device in a memory system maintains a counter to track a number of read operations performed on a data block of a memory device and determines that the number of read operations performed on the data block satisfies a first threshold criterion. The processing device further determines whether a number of scan operations performed on the data block satisfies a scan threshold criterion. Responsive to the number of scan operations performed on the data block satisfying the scan threshold criterion, the processing device performs a first data integrity scan to determine one or more first error rates for the data block, each of the one or more first error rates corresponding to a first set of wordlines of the data block, the first set comprising first alternating pairs of adjacent wordlines.

Abstract: A single sign-on system using blockchain is disclosed. The single sign-on system may interconnect various organization systems over a peer-to-peer network, with each organization system having a blockchain node and an application programming interface (API). The blockchain node invokes and uses a smart contract to write registration credentials to the blockchain during a registration process. During a login process, the blockchain node invokes the smart contract to determine whether login credentials match stored login credentials in the blockchain. In response to matching login credentials, the API may generate a single sign-on token that can be used by a user device to access one or more organization systems connected over the network.

Abstract: A method of providing cueing signals to a user of a tool. Engagement sensors are positioned, for obtaining engagement data regarding the user's engagement with the tool. The engagement data is compared to a preselected acceptable range of engagement data. If the engagement data is outside the preselected acceptable range of engagement data, then an alert signal is transmitted to an alert device. Upon receipt of the alert signal, the alert device generates a cueing alert signal to indicate that the engagement data is outside the preselected acceptable range.

Abstract: Storage devices include a memory array comprised of a plurality of memory devices. These memory devices are programmed with a modified distribution across the available memory states within the devices. The modified distribution of memory states attempts to minimize the use of memory states that are susceptible to negative effects. These negative effects can include read and write disturbs as well as data retention errors. Often, these negative effects occur on memory states on the lower and upper states within the voltage threshold range of the memory device. The distribution of memory states can be modified though the use of a modified randomization seed configured to change the probabilities of programming of each page within the memory device. This modification of the randomization seed can yield desired distribution of memory device states that are configured to reduce exposure to negative effects thus prolonging the overall lifespan of the storage device.

Abstract: A processing device in a memory system receives a request to erase a data block of a memory device, determines a number of program/erase cycles performed on the data block, and performs an erase operation to erase the data block. The processing device further determines that the number of program/erase cycles performed on the data block satisfies a scan threshold condition and performs a first threshold voltage integrity scan on the data block to determine a first error rate associated with a current threshold voltage of at least one select gate device of the data block. Responsive to the first error rate associated with the current threshold voltage of the at least one select gate device satisfying an error threshold criterion, the processing device performs a touch up operation on the at least one select gate device to adjust the current threshold voltage to the target threshold voltage.