Abstract: A DRAM memory array is organized hierarchically into groups of DRAM segments, bit blocks within segments, and memory cells within bit blocks, arranged in rows and columns. A control and logic circuit extends along the rows and columns and segment buses extend from the control and logic circuit to the DRAM segments. Partial decoding of the address and control signals occurs in the control and logic circuit and the partially decoded control and address signals are supplied on the segment buses. Adaptable memory operations are controlled in the control and logic circuit, such as redundant element substitution, data block addressing, multiplexing of the data bit width signals available at the DRAM segments to the width required by a system bus. This flexibility allows various physical organizations of the DRAM array.

Abstract: A shielding conductor is spaced from a matrix of memory cells in a dynamic random access memory (DRAM) to shield the memory cells from noise signals, such as the noise created by components of a system level integrated circuit (SLIC). The shielding conductor is connected to one of a reference or potential source, preferably external to the DRAM segment. The shielding conductor distributes the effect of noise and maintains a uniform reference potential with respect to the DRAM components with which it overlays or connects. The shielding conductor comprises a plurality of connected intersecting conductors which form a mesh which overlays substantially the entire matrix. The mesh is connected to components, such as an isolating well or a capacitor reference potential conductor, at a plurality of spaced-apart locations over the entire matrix. The shielding conductor may also be a single integral conductor which overlays the entire matrix, including the bit and word lines.

Abstract: This interconnect chip provides the function of an antifuse device. The interconnect chip is initially disconnected. Application of a high voltage applied across two terminals on the chip causes intrinsic polysilicon, which serves as an insulator between the connections to break down and form a reliable short circuit between the pads by redistribution of impurities from the layers above and below the intrinsic polysilicon.

Abstract: A DRAM array embedded in an IC, ASIC or a SLIC includes a plurality of redundant functional elements and a substitution circuit which responds to signals communicated from a bus to electrically connect selected ones of the redundant elements as fully functional replacements for corresponding defective elements of the DRAM array. The redundant elements include bit blocks and word line groups. The substitution circuit includes a controllable selector which electrically connects selected ones of the bit blocks and word lines to respond to data and address signals communicated on the bus. A register responds to bus control signals and supplies signals to achieve connection of the redundant elements. The defective elements are identified, and the replacement redundant elements are substituted, by testing the elements of the DRAM array for proper functionality and processing the results of the test.

Abstract: A reprogrammable address selector is incorporated in an embedded DRAM array which has a plurality of addressable DRAM components. The reprogrammable address selector responds to an address signal defining a unique response address. One of a plurality of selected response addresses may be electrically and selectively programmed into the selector as a substitute for a fixed response address. Thereafter the addressable DRAM component responds to the programmed response address rather than the fixed response address. The programmed response address is programmed from address signals applied on the bus.

Abstract: A functional test on a memory array, formed by a plurality of embedded memory segments each with a reprogrammable address, is conducted by programming the same address into each segment and conducting a portion of the functional test while simultaneously addressing all of the segments using the same reprogrammed address. A test pattern of signals is written into the segments by using the same reprogrammed address, and then unique addresses are reprogrammed after writing the test pattern signals. The signals which were created by writing the test pattern are read by using the unique addresses. The functional test is simplified by using the same address to write the test pattern, rather than generating unique addresses to write the test pattern to all of the memory segments.

Abstract: The invention concerns integrated circuits in which a MACRO is embedded in a standard cell array. One level of metal is devoted exclusively to non-local interconnect, and a layer of polysilicon is devoted to local interconnect, thereby saving significant space.

Abstract: This interconnect chip provides the function of an antifuse device. The interconnect chip is initially disconnected. Application of a high voltage applied across two terminals on the chip causes intrinsic polysilicon, which serves as an insulator between the connections to break down and form a reliable short circuit between the pads by redistribution of impurities from the layers above and below the intrinsic polysilicon.

Abstract: A semiconductor structure comprising a polysilicon pad, a metal pad separated from the polysilicon pad by an insulator, and a metal via connecting the pads. A fuse is formed at the intersection of the polysilicon pad and via.

Abstract: The invention concerns integrated circuits in which a MACRO is embedded in a standard cell array. One level of metal is devoted exclusively to non-local interconnect, and a layer of polysilicon is devoted to local interconnect, thereby saving significant space.

Abstract: The invention concerns approaches to interconnecting individual field-effect transistors (FETs) in integrated circuits (ICs), in order to provide a larger, composite transistor. In one approach, the individual FETs are positioned symmetrically about centroids, which are themselves distributed symmetrically over the IC. The invention allows individual digital transistors to be connected into a larger, composite, analog transistor.

Abstract: The invention concerns an analog amplifier constructed using digital transistors. The digital transistors are those contained in a gate array, and which are used for fabrication of digital devices. The analog amplifier includes an invertor, which contains two cascode amplifiers in series. The analog amplifier also includes a differential amplifier. The invertor is contained within the feedback circuit of the differential amplifier.

Abstract: A programmable read only memory (PROM) including an array of polysilicon fuse elements. The fuse array is formed within a semiconductor substrate including first and second patterned signal layers electrically insulated from one another. Each polysilicon fuse element within the array connects a first electrical conductor residing in the first patterned signal layer with a second electrical conductor residing in the second patterned signal layer. The polysilicon fuse element is in the form of a narrow strip and is folded in order to cause a current flowing through the clement to crowd, lowering the amount of current required to heat the fuse element to its melting point, i.e. the threshold current. The PROM is programmed by passing a threshold current through selected fuse elements.

Abstract: A method and apparatus for approximating power dissipation using a computer-assisted engineering (CAE) system. Initially, a determination is made of the capacitive load for each cell in a netlist for the CMOS circuit, preferably from cell library data sheets. In addition, the capacitive loads of the interconnects between stages are estimated. A switching rate for each cell is then calculated using one of two alternative methods. The first method assumes that the patterns of input signals are statistically independent, and thus estimates the switching rate from the structure of the cell and the switching rates of the inputs. The second method uses known information concerning the relative times when the input signals are high or low to determine the switching rate of the cell. Once the switching rate is known, the output frequency for the cell can be determined. The power dissipation for each cell is then calculated by multiplying the output frequency by the capacitive load.

Abstract: A three dimensional logic cube comprises a base plate having two vertically mounted backplanes attached thereto. A plurality of horizontally stacked substrates are coupled by connectors to the backplanes, with enough clearance between adjacent substrates to ensure heat dissipating air or fluid flow between the substrates. Typically, the substrates are multi-chip modules having a plurality of logic and interconnect chips attached at die mounting locations. Preferably, the logic and interconnect chips are attached to the substrate using flip TAB frames. The substrate includes a pattern interconnect for connecting together all of the chips. The logic chip is based on a standard 10K-50K gate array design with 100 micron pad spacing. The interconnect chip uses an interconnect pattern to connect the logic chips. The interconnect chip uses a lead placement identical to the logic chip, so that a single TAB frame can be used for both chips.

Abstract: The invention concerns approaches to interconnecting individual field-effect transistors (FETs) in integrated circuits (ICs), in order to provide a larger, composite transistor. In one approach, the individual FETs are positioned symmetrically about centroids, which are themselves distributed symmetrically over the IC. The invention allows individual digital transistors to be connected into a larger, composite, analog transistor.

Abstract: An I/O transceiver circuit for use on each integrated circuit of a multi-chip module that controls the threshold voltage of the receiver portion and also controls the output resistance of the transmitter portion. Control of the threshold voltage allows operation of the circuit at low voltage levels and with relative immunity from process and temperature variations. Control of the output resistance allows operation without characteristically terminated I/O lines between multi-chip modules, thereby saving power otherwise wasted in the terminating resistors. Control of the threshold voltage is achieved by means of a reference circuit. Control of the output resistance is achieved by a phase-locked-loop arrangement. Further, the I/O transceiver circuit may also have a state where it clamps noise pulses on its I/O line.

Abstract: An output driver that has and output current that is independent of supply voltage, load capacitance, temperature and processing variables as long as their variation from the norm is limited. This current limited output driver is specially adapted for gate array integrated circuits. The output driver uses two reference voltages to limit the output current and a pulldown transistor to ensure that logic low is achieved despite voltage, load capacitance, temperature and processing variations.

Abstract: A typical Programmable Logic Array (PLA) provides an available logic function, or precursor, which a user modifies to obtain a desired logic function. For example, the precursor may be (A.multidot.A19 B.multidot.B+(A.multidot.A.multidot.B.multidot.B). The user obtains the desired function, such as (A.multidot.)+(A.multidot.B), by blowing fuses inside the PLA. The fuse-blowing physically blocks data signals (such as the deleted and the deleted B in the first term) from reaching an internal AND gate which performs the ".multidot." operation. However, this fuse-blowing is permanent, and irreversible. In contrast, one form of the invention does the blocking by using a NAND gate. That is, the data signal, such as the "B," is applied to one input of the NAND gate. A capacitor is connected to the other input. The user stores either a ONE or a ZERO on the capacitor. A ONE blocks the data signal (the output of the NAND cannot change). A ZERO passes the data signal (the output is the inverse of the data signal).

Abstract: A semiconductor structure comprising a polysilicon pad, a metal pad separated from the polysilicon pad by an insulator, and a metal via connecting the pads. A fuse is formed at the intersection of the polysilicon pad and via.