Abstract: The geometric configuration of a molten zone migrating through a solid body of semiconductor material during thermal gradient zone melting is maintained by a combination of noncentro-symmetric rotation about an axis displaced from the central axis of the body and translation of the solid body while being heated by a suitable heat source.

Abstract: An optical coating is disposed on selected surface areas of a semiconductor element to enchance processing thereof by TGZM

Abstract: An improved method of initiating the moving of a molten zone of an aluminum rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies alloying the aluminum metal to the semiconductor material of the surface of the body in contact therewith at a temperature of from 577.degree. to 660.degree. C. The alloying process enables one to migrate two or more intersecting "wires" simultaneously, as well as three "wires" intersecting at a common point of origin, through the body.

Abstract: A semiconductor body heater is provided with a planar array of radiant heating elements spaced from a reflector. In the preferred embodiment, each radiant heating element comprises a tungsten filament quartz lamp. Each lamp is removable and replaceable without disengaging any other lamp. The reflector is cooled by flows of gas and liquid coolant therethrough. Flows of gas between the planar array of lamps and the reflector and between the reflector and a cover member also cool the apparatus. Various diffusers for substantially eliminating temperature nonuniformities over an area illumined by the planar array of lamps are also disclosed. The semiconductor body heater of the present invention is particularly well suited for use in a temperature gradient zone melting process.

Abstract: A furnace for practising temperature gradient zone melting on one or more semiconductor bodies comprises a closable work chamber for receiving semiconductor bodies for processing, a radiant heat source which forms a first closure member and a heat sink which forms a second closure member, the closure members defining the work chamber and being mutually separable by, for example, a hydraulic actuator to allow access to the interior of the work chamber. A reflector is disposed between the heat source and heat sink in surrounding relationship to the semiconductor bodies being processed to ensure the maintenance of a uniform temperature gradient within the work chamber. The reflector and the heat sink are liquid cooled for the effective removal of heat therefrom. The heat sink is further provided with a plurality of radiation attenuating cavities to enhance the performance of the heat sink.

Abstract: Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the same time maintaining a zero temperature gradient through the wafer in a direction normal to the droplet travel course. Unidirectional heat flow apparatus implementing this method is also disclosed.

Abstract: An apparatus for imparting combined centro-symmetric and noncentro-symmetric rotation to semiconductor bodies comprises a liquid-cooled sun gear, a stationary liquid-cooled ring gear coaxial with and radially spaced outwardly from the sun gear, and at least one planet gear disposed between and driven in engagement with the sun and ring gears. Means are provided for supporting a semiconductor body on each of the planet gears while minimizing the conduction of heat from the semiconductor body to the planet gear. Means are also provided for guiding a semiconductor body onto the supporting means and centering the semiconductor body on the planet gear. Thermal distortion of the apparatus is minimized when heated to extreme temperatures making the apparatus ideally suited for processing the semiconductor bodies with heat as in processing by temperature gradient zone melting.

Abstract: An anisotropic resistor for electrical feed throughs embodies a body of semiconductor material having at least one channel region of recrystallized material of the body formed therein. The channel region extends entirely through, and terminates in two major opposed surfaces of, the body. The at least one region is formed by a temperature gradient zone melting process, has a substantially uniform level of resistivity throughout the region and is electrically conductive.

Abstract: The geometric configuration of a molten zone migrating through a solid body of semiconductor material during thermal gradient zone melting is maintained by noncentro-symmetric rotation of the solid body about an axis displaced therefrom, by centro-symmetric rotation of the solid body, by translation of the solid body, by a combination of centro-symmetric rotation and translation of the solid body or by a combination of noncentro-symmetric rotation and translation of the solid body while being heated by a suitable heat source.

Abstract: Disclosed is a method of manufacturing semiconductor devices by thermomigrating impurities through an oxide layer.

Abstract: Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet travel, and at the same time maintaining a zero temperature gradient through the wafer in a direction normal to the droplet travel course. Unidirectional heat flow apparatus implementing this method is also disclosed.

Abstract: An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant metal therein. Means are provided for connecting the columnar structures into two series electrical circuit arrangements to function respectively as the primary and secondary windings of a deep diode solid state transformer.

Abstract: A semiconductor body holder includes a rigid refractory base having a plurality of flexible refractory arms extending from one end thereof. Each arm includes a finger extending therefrom, the fingers in cooperation with the arms, serving to resiliently hold a body of semiconductor material during processing. The holder of the present invention is particularly useful in the practice of temperature gradient zone melting on the semiconductor body.

Abstract: A process for forming aluminum doped silicon semiconductor material for large area semiconductor devices embodies thermal gradient zone melting processing and migration of a molten zone of a predetermined thickness to assure stability of the molten zone while migrating.

Abstract: An array of vapor deposited metal wires is migrated by TGZM through a body of semiconductor material to divide the body into a plurality of individual regions electrically isolated from each other. The preferred crystal orientations of the surface on which migration is initiated, directions of wire alignment on that surface, wire sizes and preferred axes of migration are disclosed herein.

Abstract: An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies the alloying of the metal to the semiconductor material of the surface of the body in contact therewith. The alloying process enables one to migrate two or more intersecting "wires" simultaneously, as well as three "wires" intersecting at a common point of origin, through the body.

Abstract: A deep diode zener has a lamellar structured body of single crystal semiconductor material. The lamellar structure is produced by a thermal gradient zone melting process embodying the thermal migration of metal "wires" through the body to form a region of conductivity opposite to that of the body. The material of the region is recrystallized semiconductor material of the body with solid solubility of the metal "wire" to impart the desired type conductivity and resistivity to the region.

Abstract: A semiconductor switch is a lamellar body of semiconductor material having two major opposed surfaces and at least one group of four regions of alternate type conductivity. At least three of the four regions have recrystallized semiconductor material having a solid solubility of metal therein to impart the type conductivity thereto. Each of the first and third regions have the same type conductivity but different levels of impurity concentration. Each of the second and fourth regions have the same type conductivity but different levels of impurity concentration.

Abstract: The practice of thermal gradient zone melting in processing a body of semiconductor material is enhanced by providing a radiation coating on selected surface areas of the body.

Abstract: Optical coatings are employed on selected surface areas of a semiconductor element to enhance processing of semiconductor materials by temperature gradient zone melting.