Abstract: A semiconductor controlled rectifier has a lamellar body of semiconductor material of at least one group of four alternate first and second regions of opposite type conductivity. The second regions are made from recrystallized semiconductor material of the first regions and contain a sufficient level of concentration of a dopant impurity to impart thereto the opposite type conductivity. It is recrystallized material with solid solubility of the impurity therein. The controlled rectifier is turned on and off by either a control electrode or a source of illumination.

Abstract: An anistropic resistor for electrical feed throughs embodies a body of semiconductor material having at least one channel region of recrystallized material of the body formed therein. The channel region extends entirely through, and terminates in two major opposed surfaces of, the body. The at least one region is formed by a temperature gradient zone melting process, has a substantially uniform level of resistivity throughout the region and is electrically conductive.

Abstract: A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.

Abstract: A varistor has a lamellar structured body of semiconductor material. The lamellar structure is produced by migrating "wires" of a metal by a temperature gradient zone melting process through the solid material of the body to form a plurality of alternate regions of opposite type conductivity. A P-N junction is formed at the contiguous surfaces of the material of each pair of regions of opposite type conductivity. The material of the regions formed by the migrated wires is recrystallized semiconductor material of the body suitably doped with metal of the wire migrated therethrough to impart a predetermined type conductivity and a predetermined level of resistivity thereto.

Abstract: A deep diode transistor includes at least one of the emitter, the collector and the base regions comprising recrystallized material of the semiconductor substrate embodying the transistor. Each region of recrystallized material is formed in situ by the migration of a melt of a metal-rich semiconductor material through the material of the substrate at a predetermined elevated temperature along a thermal gradient established in the substrate.

Abstract: An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant metal therein. Means are provided for connecting the columnar structures into two series electrical circuit arrangements to function respectively as the primary and secondary windings of a deep diode solid state transformer.

Abstract: When an aluminum-rich droplet is migrated along the [100] axis of a silicon crystal during a thermal gradient zone melting operation, a droplet is displaced appreciably from its thermal trajectory by dislocations it encounters in the crystal. This random walk of the droplet is minimized to enable preservation of the registry of deep diode arrays by maintaining a unidirectional thermal gradient a few degrees off the [100] axis.

Abstract: A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal.

Abstract: Disclosed is a technique useful in the manufacture of semiconductor devices. When a semiconductor device is manufactured by the temperature gradient zone melting process, it is subjected to a short diffusion cycle following thermomigration. The cycle smooths out discontinuities caused by breaks in wire migration and effectively seals and isolates occluded particles of the impurity remaining in the semiconductor body. The cycle is also useful for providing large area doped regions that cannot be formed by wire migration due to constraints on wire direction.

Abstract: The geometric configuration of a molten zone migrating through a solid body of semiconductor material during thermal gradient zone melting is maintained by simultaneous noncentro-symmetric and secondary rotation of the solid body.

Abstract: One region of a large area semiconductor power diode comprises recrystallized semiconductor material formed in situ, and joined to a second region, by temperature gradient zone melting.

Abstract: A process for making a deep diode atomic battery embodies thermal gradient zone melting techniques for fabricating the structure thereof. Thermal gradient zone melting may also be employed to provide the battery with a radioactive source for energizing the battery.

Abstract: An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material embodies the sintering of the metal to the surface of the body. The sintering process enables one to migrate two or more intersecting "wires" simultaneously as well as three wires intersecting at a common point of origin.

Abstract: Metal wires of widths as small as 10 microns are successfully migrated by thermal gradient zone melting processing as a molten zone through a body of semiconductor material. The metal wires are migrated to a preselected depth without use of oxide masking and/or etched grooves when the planar orientation of the surface of the body is (100).

Abstract: Annular regions of a predetermined type conductivity are produced in a body of semiconductor material by a temperature gradient zone melting process embodying both noncentro-symmetric rotation of the body as well as secondary rotation of the body about its vertical axis.

Abstract: A solution of potassium hydroxide is employed to remove the reaction products of aluminum migrated through silicon-semiconductor material by thermal gradient zone melting processing.

Abstract: A deep buried electrical layer is provided in a semiconductor device by thermal gradient zone melting.

Abstract: A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.

Abstract: A high voltage diode has a lamellar structured body of semiconductor material. The lamellar structure is produced by the thermal gradient zone melting process method of thermo migrating metal "wires" through the body to form a plurality of spaced regions of conductivity opposite to that of the body. The material of the spaced regions is recrystallized semiconductor material of the body having solid solubility of an impurity dopant therein thereby being suitably doped to form a selected type conductivity and resistivity. The resulting structure is a plurality of integral diodes connected in a series electrical circuit arrangement.

Abstract: A deep diode bilateral semiconductor switch has a lamellar body of single crystal semiconductor material of at least five alternate first and second regions of different and opposite type conductivity. The second regions are made from recrystallized semiconductor material of the first regions having solid solubility of metal therein to impart thereto the opposite type conductivity and selective resistivity. The bilateral semiconductor switch conducts current in either direction.