Patents by Inventor Hasan Sharifi

Hasan Sharifi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200191902
    Abstract: A radar system with frequency conversion includes a signal generator configured to generate an input signal at a first frequency. A transmitting interposer is configured to receive the input signal from the signal generator. The transmitting interposer includes a transmitting front-end module configured to upconvert the input signal at the first frequency to an outgoing radar signal at a second frequency greater than the first frequency, and a transmitting antenna module having a plurality of transmitting patches configured to radiate the outgoing radar signal. A receiving interposer is configured to transmit an output signal to the signal generator. The receiving interposer includes a receiving antenna module having a plurality of receiving patches configured to capture an incoming radar signal at the second frequency, and a receiving front-end module configured to downconvert the incoming radar signal at the second frequency to the output signal at the first frequency.
    Type: Application
    Filed: December 14, 2018
    Publication date: June 18, 2020
    Applicant: GM Global Technology Operations LLC
    Inventors: Florian G. Herrault, Hasan Sharifi, Robert G. Nagele, Igal Bilik
  • Patent number: 10490689
    Abstract: Methods of hydrogen atom incorporation and of passivation of grain boundaries of polycrystalline semiconductors use a low temperature, pulsed plasma to incorporate hydrogen atoms into the grain boundaries of polycrystalline semiconductor materials in a controlled manner. A hydrogen-passivated polycrystalline IR detector has hydrogen atoms incorporated into grain boundaries of a polycrystalline Group III-V compound semiconductor detector element and a dark current density characteristic that is lower than the dark current density characteristic of a polycrystalline IR detector without the incorporated hydrogen atoms.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: November 26, 2019
    Assignee: HRL Laboratories, LLC
    Inventors: Sevag Terterian, Terence J. DeLyon, Bor-An Clayton Tu, Hasan Sharifi
  • Patent number: 10424608
    Abstract: Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300° C. to about 400° C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: September 24, 2019
    Assignee: HRL Laboratories, LLC
    Inventors: Terence J. DeLyon, Rajesh D. Rajavel, Sevag Terterian, Minh B. Nguyen, Hasan Sharifi
  • Patent number: 10361333
    Abstract: A detector. The detector includes a first collector, a first interface layer on the first collector, a first absorber on the first interface layer, a second interface layer on the first absorber, and a second collector on the second interface layer. The first absorber is configured to absorb photons to generate electron-hole pairs. The first interface layer may include a barrier configured to impede the flow of majority carriers from the first absorber to the first collector. The second barrier may include a barrier configured to impede the flow of majority carriers from the first absorber, or from a second absorber, to the second collector.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: July 23, 2019
    Assignee: HRL Laboratories, LLC
    Inventors: Rajesh D. Rajavel, Hasan Sharifi, Terence J. DeLyon
  • Patent number: 10361731
    Abstract: A Delta-Sigma modulator architecture is disclosed that uses interleaving and dynamic matching algorithms to address the needs of multi-mode, multi-band high bandwidth transmitters. The proposed architecture also supports a novel software defined transmitter architecture based on an interleaved Delta-Sigma modulator to generate RF signals. The proposed architecture leverages interleaving concepts to relax subcomponent clock rates without changing the effective oversampling ratio, thus, making it easier to reach aggressive dynamic range goals across wider bandwidths at higher frequencies. The DEM algorithm helps to randomize mismatch errors across all interleaved paths and improves substantially the signal-to-noise ratio. Additionally, a tunable bandpass filter can be added to reject out-of-band emissions.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: July 23, 2019
    Assignee: HRL Laboratories, LLC
    Inventors: Zhiwei A. Xu, Yen-Cheng Kuan, Cynthia D. Baringer, Hasan Sharifi, James Chingwei Li, Donald A. Hitko
  • Publication number: 20190198449
    Abstract: An electronic assembly, comprising a carrier wafer having a top wafer surface and a bottom wafer surface; an electronic integrated circuit being formed in the carrier wafer and comprising a wafer contact pad on the top wafer surface; said carrier wafer comprising a through-wafer cavity joining the top and bottom wafer surfaces; a component chip having a component chip top surface, a component chip bottom surface and component chip side surfaces, the component chip being held in said through-wafer cavity by an attachment material attaching at least one wall of the through-wafer cavity to at least one of the component chip bottom surface and a component chip side surface; said component chip comprising at least one component contact pad on said component chip top substrate; a first conductor connecting said wafer contact pad and said component contact pad.
    Type: Application
    Filed: October 11, 2018
    Publication date: June 27, 2019
    Applicant: HRL Laboratories, LLC
    Inventors: Florian G. HERRAULT, David BROWN, Hasan SHARIFI, Joel C. WONG, Dean C. REGAN, Yan TANG, Helen FUNG
  • Publication number: 20190165820
    Abstract: A Delta-Sigma modulator architecture is disclosed that uses interleaving and dynamic matching algorithms to address the needs of multi-mode, multi-band high bandwidth transmitters. The proposed architecture also supports a novel software defined transmitter architecture based on an interleaved Delta-Sigma modulator to generate RF signals. The proposed architecture leverages interleaving concepts to relax subcomponent clock rates without changing the effective oversampling ratio, thus, making it easier to reach aggressive dynamic range goals across wider bandwidths at higher frequencies. The DEM algorithm helps to randomize mismatch errors across all interleaved paths and improves substantially the signal-to-noise ratio. Additionally, a tunable bandpass filter can be added to reject out-of-band emissions.
    Type: Application
    Filed: November 30, 2017
    Publication date: May 30, 2019
    Inventors: Zhiwei A. Xu, Yen-Cheng Kuan, Cynthia D. Baringer, Hasan Sharifi, James Chingwei Li, Donald A. Hitko
  • Patent number: 10305163
    Abstract: The present application generally relates communications and hazard avoidance within a monitored driving environment. More specifically, the application teaches a system for semi-transparent and flexible millimeter wave circuits and antennas using inexpensive PET substrate. The system facilitates the fabrication of millimeter wave circuits, transmission lines and antennas in various optically transparent platform where optical transparency is desired, for example in automotive radar in windows, windshield, and rear/side mirrors.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: May 28, 2019
    Assignee: GM GLOBAL TECHNOLOGY OPERATIONS LLC
    Inventors: Hyok Jae Song, Melanie S. Yajima, Hasan Sharifi, Keerti S. Kona, Igal Bilik
  • Patent number: 10269996
    Abstract: A position sensitive detector includes a substrate, an absorber layer on the substrate, a barrier layer on the absorber layer, a contact layer on the barrier layer, and a first contact and a second contact on the contact layer. The barrier layer prevents a flow of majority carriers from the absorber layer to the contact layer. The position sensitive detector is sensitive to a lateral position between the first contact and the second contact of incident light on the contact layer.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: April 23, 2019
    Assignee: HRL Laboratories, LLC
    Inventors: Hasan Sharifi, Rajesh D. Rajavel, Terence J. De Lyon, Daniel Yap
  • Publication number: 20190051969
    Abstract: The present application generally relates communications and hazard avoidance within a monitored driving environment. More specifically, the application teaches a system for semi-transparent and flexible millimeter wave circuits and antennas using inexpensive PET substrate. The system facilitates the fabrication of millimeter wave circuits, transmission lines and antennas in various optically transparent platform where optical transparency is desired, for example in automotive radar in windows, windshield, and rear/side mirrors.
    Type: Application
    Filed: August 14, 2017
    Publication date: February 14, 2019
    Inventors: Hyok Jae Song, Melanie S. Yajima, Hasan Sharifi, Keerti S. Kona, Igal Bilik
  • Patent number: 10177741
    Abstract: Several embodiments of an envelope tracking active circulator is disclosed with a method to cascade them. In an active transistor based circulator (active circulator), gate (base) and drain (collector) bias voltage can be adjusted by RF or microwave input envelop signal. This is called envelop tracking active circulator. In this concept, input RF signal is detected by detection circuit, such as detection diode or coupler and converted into low frequency envelop signal by the proper filtering circuitry. The generated envelop signal controls the supply voltage of the drain and gate with the proper function of the envelop signal to improve active circulator insertion loss, isolation and power handling capability. This concept can be applied to any type of solid-state FET (Field effect transistor) transistor based active circulator, as long as they have bias dependent trans-conductance and capacitances inside.
    Type: Grant
    Filed: August 18, 2016
    Date of Patent: January 8, 2019
    Assignee: HRL Laboratories, LLC
    Inventors: Jongchan Kang, Hasan Sharifi
  • Patent number: 10056340
    Abstract: An electronic circuit comprising: an integrated circuit chip, the integrated circuit chip having a top face; portions of the top face of the chip being covered by a first metal layer electrically connected to the integrated circuit; and a dialectic layer formed on the top face of the chip beside and on top of said first metal layer; wherein the dielectric layer extends parallel to the top face of the chip beyond the edges of the chip, the first metal layer extending in the dielectric layer beyond the edges of the chip; and wherein portions of a top surface of the dielectric layer are covered by a second metal layer, portions of the first and second metal layers being electrically connected through the dielectric layer.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: August 21, 2018
    Assignee: HRL Laboratories, LLC
    Inventors: Hasan Sharifi, Keisuke Shinohara, Mary C. Montes, Charles McGuire, Wonill Ha, Jason May, Hooman Kazemi, Jongchan Kang, Robert G. Nagele
  • Patent number: 9923114
    Abstract: An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: March 20, 2018
    Assignee: THE BOEING COMPANY
    Inventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
  • Patent number: 9893401
    Abstract: A multi-port active circulator where each of a plurality of FET transistors has (i) a gate connected to an associated port of the multi-port active circulator via a capacitor of an associated one of a plurality of first RF chokes, each of the first RF chokes being connected to a gate of an associated FET transistor of said plurality of transistors, the associated port of said associated FET transistor and to a power supply bias connection; (ii) a source connected to a common point; and (iii) a drain connected to the gate of the same FET transistor by a feedback circuit and connected to the gate of a neighboring FET transistor via a capacitor of one of a plurality of second RF chokes, each of which coupling gates and drains of neighboring FET transistors via capacitors thereof and being connected to another power supply bias connection.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: February 13, 2018
    Assignee: HRL Laboratories, LLC
    Inventors: Jongchan Kang, Hasan Sharifi, Eric M. Prophet
  • Patent number: 9876134
    Abstract: A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: January 23, 2018
    Assignee: THE BOEING COMPANY
    Inventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi
  • Patent number: 9818896
    Abstract: An infrared photodetector including a substrate, a barrier layer, and an absorber layer disposed between the substrate and the barrier layer, the absorber layer having a molar concentration grading that results in an uncoated quantum efficiency of greater than about 40 percent.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: November 14, 2017
    Assignee: The Boeing Company
    Inventors: Terence de Lyon, Sevag Terterian, Hasan Sharifi
  • Patent number: 9748427
    Abstract: The invention describes a device which enables MWIR photodetectors to operate at zero bias and deliver low dark current performance. The performance is achieved by incorporating a p-n junction in the barrier. The device consists of a p-type contact layer, a p-n junction in the compound barrier (CB) with graded composition and/or doping profiles, and an n-type absorber (p-CB-n) device.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: August 29, 2017
    Assignee: HRL Laboratories, LLC
    Inventors: Rajesh D Rajavel, Hasan Sharifi, Terence J De Lyon, Pierre-Yves Delaunay, Brett Z Nosho
  • Patent number: 9709711
    Abstract: A wavelength-selective optical diffuser comprising a substrate of a first material having opposite first and second surfaces, wherein said first material is transparent to a first wavelength ?S and a second wavelength ?L, with ?L>4?S; at least a first surface of said substrate having a surface relief such that a beam of light having the first wavelength ?S is diffused, with a rms phase delay S>?/4, when traversing said substrate; and a beam of light having the second wavelength ?L is minimally diffused, with a rms phase delay S<?/4, when traversing said substrate.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: July 18, 2017
    Assignees: HRL Laboratories, LLC, The Boeing Company
    Inventors: Daniel Yap, Hasan Sharifi, Don F. Weston, Rajesh D. Rajavel
  • Patent number: 9691761
    Abstract: A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: June 27, 2017
    Assignee: HRL Laboratories, LLC
    Inventors: Pamela R. Patterson, Keisuke Shinohara, Hasan Sharifi, Wonill Ha, Tahir Hussain, James Chingwei Li, Dana C. Wheeler
  • Publication number: 20170155011
    Abstract: A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.
    Type: Application
    Filed: December 1, 2015
    Publication date: June 1, 2017
    Inventors: Terence J. de Lyon, Sevag Terterian, Hasan Sharifi