Abstract: A position sensitive detector includes a substrate, an absorber layer on the substrate, a barrier layer on the absorber layer, a contact layer on the barrier layer, and a first contact and a second contact on the contact layer. The barrier layer prevents a flow of majority carriers from the absorber layer to the contact layer. The position sensitive detector is sensitive to a lateral position between the first contact and the second contact of incident light on the contact layer.

Abstract: The present application generally relates communications and hazard avoidance within a monitored driving environment. More specifically, the application teaches a system for semi-transparent and flexible millimeter wave circuits and antennas using inexpensive PET substrate. The system facilitates the fabrication of millimeter wave circuits, transmission lines and antennas in various optically transparent platform where optical transparency is desired, for example in automotive radar in windows, windshield, and rear/side mirrors.

Abstract: Several embodiments of an envelope tracking active circulator is disclosed with a method to cascade them. In an active transistor based circulator (active circulator), gate (base) and drain (collector) bias voltage can be adjusted by RF or microwave input envelop signal. This is called envelop tracking active circulator. In this concept, input RF signal is detected by detection circuit, such as detection diode or coupler and converted into low frequency envelop signal by the proper filtering circuitry. The generated envelop signal controls the supply voltage of the drain and gate with the proper function of the envelop signal to improve active circulator insertion loss, isolation and power handling capability. This concept can be applied to any type of solid-state FET (Field effect transistor) transistor based active circulator, as long as they have bias dependent trans-conductance and capacitances inside.

Abstract: An electronic circuit comprising: an integrated circuit chip, the integrated circuit chip having a top face; portions of the top face of the chip being covered by a first metal layer electrically connected to the integrated circuit; and a dialectic layer formed on the top face of the chip beside and on top of said first metal layer; wherein the dielectric layer extends parallel to the top face of the chip beyond the edges of the chip, the first metal layer extending in the dielectric layer beyond the edges of the chip; and wherein portions of a top surface of the dielectric layer are covered by a second metal layer, portions of the first and second metal layers being electrically connected through the dielectric layer.

Abstract: An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.

Abstract: A multi-port active circulator where each of a plurality of FET transistors has (i) a gate connected to an associated port of the multi-port active circulator via a capacitor of an associated one of a plurality of first RF chokes, each of the first RF chokes being connected to a gate of an associated FET transistor of said plurality of transistors, the associated port of said associated FET transistor and to a power supply bias connection; (ii) a source connected to a common point; and (iii) a drain connected to the gate of the same FET transistor by a feedback circuit and connected to the gate of a neighboring FET transistor via a capacitor of one of a plurality of second RF chokes, each of which coupling gates and drains of neighboring FET transistors via capacitors thereof and being connected to another power supply bias connection.

Abstract: A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.

Abstract: An infrared photodetector including a substrate, a barrier layer, and an absorber layer disposed between the substrate and the barrier layer, the absorber layer having a molar concentration grading that results in an uncoated quantum efficiency of greater than about 40 percent.

Abstract: The invention describes a device which enables MWIR photodetectors to operate at zero bias and deliver low dark current performance. The performance is achieved by incorporating a p-n junction in the barrier. The device consists of a p-type contact layer, a p-n junction in the compound barrier (CB) with graded composition and/or doping profiles, and an n-type absorber (p-CB-n) device.

Abstract: A wavelength-selective optical diffuser comprising a substrate of a first material having opposite first and second surfaces, wherein said first material is transparent to a first wavelength ?S and a second wavelength ?L, with ?L>4?S; at least a first surface of said substrate having a surface relief such that a beam of light having the first wavelength ?S is diffused, with a rms phase delay S>?/4, when traversing said substrate; and a beam of light having the second wavelength ?L is minimally diffused, with a rms phase delay S<?/4, when traversing said substrate.

Abstract: A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.

Abstract: A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.

Abstract: An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.

Abstract: An optical device includes an optically transparent and electrically conducting conductor including graphene, a network of metal nanowires, or graphene integrated with a network of metal nanowires. The optical device includes a II VI compound semiconductor, a III V compound semiconductor, or InAsSb.

Abstract: A multi-port active circulator includes a plurality of cascode circuits coupled to one another in a ring. Each respective cascode circuit of the plurality of cascode circuits is coupled to a respective port of a plurality of ports. Each respective cascode circuit includes a common source transistor, a common gate transistor coupled to the common source transistor, and a feedback circuit coupled from the common gate transistor to the common source transistor. Each common source transistor of each respective cascode circuit is coupled to a common junction point.

Abstract: A system and a method of coupling radiating elements to a structure are described. The system includes a structure including a fascia, an antenna applique to be disposed conformally behind the fascia, and an adhesion layer between the antenna applique and the fascia.

Abstract: A single-to-differential converter and a method of fabricating the single-to-differential converter on an integrated circuit are described. The single-to-differential converter provides a pair of differential outputs based on a single-ended input and includes an input node to receive the single-ended input, and a first transistor connected to a power supply pin. A second transistor is connected to the power supply pin. The first transistor and the second transistor are biased under a same amount of direct current (DC) and the pair of differential outputs are generated at respective collectors of the first transistor and the second transistor.

Abstract: An electronic circuit comprising: an integrated circuit chip, the integrated circuit chip having a top face; portions of the top face of the chip being covered by a first metal layer electrically connected to the integrated circuit; and a dielectic layer formed on the top face of the chip beside and on top of said first metal layer; wherein the dielectric layer extends parallel to the top face of the chip beyond the edges of the chip, the first metal layer extending in the dielectric layer beyond the edges of the chip; and wherein portions of a top surface of the dielectric layer are covered by a second metal layer, portions of the first and second metal layers being electrically connected through the dielectric layer.

Abstract: An infrared photo-detector with multiple discrete regions of a first absorber material. These regions may have geometric shapes with sloped sidewalls. The detector also may include a second absorber region comprising a second absorber material that absorbs light of a shorter wavelength than the light absorbed by the multiple discrete absorber regions of the first absorber material. The geometric shapes may extend only through the first absorber material. Alternatively, the geometric shapes may extend partially into the second absorber region. The detector has a metal reflector coupled to the multiple discrete absorber regions. The detector also has a substrate containing the discrete absorber regions and the second absorber region. The substrate can further include geometric shaped features etched into the substrate, with those features formed on the side of the substrate opposite the side containing the discrete absorber regions and the second absorber region.

Abstract: A compound semiconductor integrated circuit comprising a first substrate; a first electronic component formed on top of said first substrate; a layer of a first dielectric material formed on top of said first substrate and including said first electronic component, said layer of a first dielectric material comprising a recess exposing a first region of said first substrate; and a layer of a second dielectric material attached to said first substrate on top of said first region of said first substrate after manufacturing of said layer of a second dielectric material, said layer of a second material comprising a second electronic component.