Patents by Inventor Hau-Tai Shieh

Hau-Tai Shieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11450605
    Abstract: Circuit devices, such as integrated circuit devices, are constructed with combination circuits that include two or more cascading transistors, and one or more metal layers disposed over the cascading transistors. The cascading transistors include multiple internal nodes (e.g., common source/drain regions). The multiple internal nodes are not connected to a common metal stripe (the same metal stripe) in the one or more metal layers. The absence of the connections between the internal nodes and a common metal stripe reduce or eliminate the load on the internal nodes. The transistors in the cascading transistors are independent of each other.
    Type: Grant
    Filed: February 11, 2021
    Date of Patent: September 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chien-Yuan Chen, Cheng-Hung Lee, Hung-Jen Liao, Hau-Tai Shieh, Kao-Cheng Lin, Wei-Min Chan
  • Patent number: 11444608
    Abstract: A level shifter includes: a first inverter configured to receive an input signal in a low voltage domain and shift the input signal from the low voltage domain to a first output signal at a first output terminal in a high voltage domain higher than the low voltage domain in response to a logical high state of a first clock signal in the low voltage domain; a second inverter configured to receive a complement of the input signal and shift the complement of the input signal from the low voltage domain to a second output signal at a second output terminal in the high voltage domain in response to the logical high state; a first NMOS sensing transistor and a second NMOS sensing transistor; a PMOS transistor configured to equalize the first output signal and the second output signal in response to a logical low state of the first clock signal.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: September 13, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chien-Yuan Chen, Cheng Hung Lee, Hung-Jen Liao, Hau-Tai Shieh
  • Publication number: 20220284941
    Abstract: A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.
    Type: Application
    Filed: May 25, 2022
    Publication date: September 8, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Che-Ju Yeh, Hau-Tai Shieh, Yi-Tzu Chen
  • Publication number: 20220277781
    Abstract: A memory circuit includes a NAND logic gate, a first N-type transistor, a second N-type transistor, a first inverter and a first latch. The NAND logic gate is configured to receive a first bit line signal and a second bit line signal, and to generate a first signal. The first N-type transistor is coupled to the NAND logic gate, and configured to receive a first pre-charge signal. The second N-type transistor is coupled to the first N-type transistor and a reference voltage supply, and configured to receive a first clock signal. The first inverter is coupled to the NAND logic gate, and configured to output a data signal inverted from the first signal. The first latch is coupled to the NAND logic gate, and configured to latch the first signal in response to at least the first clock signal or the first pre-charge signal.
    Type: Application
    Filed: April 20, 2021
    Publication date: September 1, 2022
    Inventors: Yi-Tzu CHEN, Ching-Wei WU, Hau-Tai SHIEH, Hung-Jen LIAO, Fu-An WU, He-Zhou WAN, XiuLi YANG
  • Patent number: 11423962
    Abstract: A bit line is pre-charged based on a clock signal internal to a bit line pre-charge circuit when a bit line pre-charge window is within a margin of a predetermined pre-charge window. A bit line is pre-charged based on a clock signal external to the bit line pre-charge circuit when the bit line pre-charge window is outside the margin of the predetermined pre-charge window.
    Type: Grant
    Filed: May 27, 2021
    Date of Patent: August 23, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, ltd.
    Inventors: Che-Ju Yeh, Yu-Hao Hsu, Hau-Tai Shieh, Cheng Lee
  • Publication number: 20220254712
    Abstract: Circuit devices, such as integrated circuit devices, are constructed with combination circuits that include two or more cascading transistors, and one or more metal layers disposed over the cascading transistors. The cascading transistors include multiple internal nodes (e.g., common source/drain regions). The multiple internal nodes are not connected to a common metal stripe (the same metal stripe) in the one or more metal layers. The absence of the connections between the internal nodes and a common metal stripe reduce or eliminate the load on the internal nodes. The transistors in the cascading transistors are independent of each other.
    Type: Application
    Filed: February 11, 2021
    Publication date: August 11, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Yuan Chen, Cheng-Hung Lee, Hung-Jen Liao, Hau-Tai Shieh, Kao-Cheng Lin, Wei-Min Chan
  • Publication number: 20220199145
    Abstract: Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.
    Type: Application
    Filed: March 4, 2022
    Publication date: June 23, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Tzu Chen, Ching-Wei Wu, Hau-Tai Shieh, Hung-Jen Liao
  • Patent number: 11361810
    Abstract: A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: June 14, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Che-Ju Yeh, Hau-Tai Shieh, Yi-Tzu Chen
  • Patent number: 11361812
    Abstract: Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: June 14, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yi-Tzu Chen, Ching-Wei Wu, Hau-Tai Shieh, Hung-Jen Liao
  • Publication number: 20220130446
    Abstract: Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.
    Type: Application
    Filed: October 27, 2020
    Publication date: April 28, 2022
    Inventors: Yi-Tzu Chen, Ching-Wei Wu, Hau-Tai Shieh, Hung-Jen Liao
  • Patent number: 11302701
    Abstract: Systems and methods are provided for fabricating a static random access memory (SRAM) cell in a multi-layer semiconductor device structure. An example SRAM device includes a first array of SRAM cells, a second array of SRAM cells, a processing component, and one or more inter-layer connection structures. The first array of SRAM cells are formed in a first device layer of a multi-layer semiconductor device structure. The second array of SRAM cells are formed in a second device layer of the multi-layer semiconductor device structure, the second device layer being formed on the first device layer. The processing component is configured to process one or more input signals and generate one or more access signals. One or more inter-layer connection structures are configured to transmit the one or more access signals to activate the first device layer or the second device layer for allowing access to a target SRAM cell.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: April 12, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chien-Yu Huang, Chien-Yuan Chen, Hau-Tai Shieh
  • Publication number: 20220093587
    Abstract: An integrated circuit (IC) structure includes a first transistor and a second transistor. The first transistor includes a first active region and a first gate disposed on the first active region, in which the first gate has a first effective gate length along a first direction parallel to a lengthwise direction of the first active region. The second transistor includes a second active region and a second gate disposed on the second active region, and includes a plurality of gate structures arranged along the first direction and separated from each other, in which the second gate has a second effective gate length along the first direction, the second effective gate length is n times the first effective gate length, and n is a positive integer greater than 1.
    Type: Application
    Filed: September 18, 2020
    Publication date: March 24, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Yuan CHEN, Hau-Tai SHIEH
  • Publication number: 20220068355
    Abstract: The disclosure is directed to a memory circuit, an electronic device, and a method of operating the memory circuit. According to an exemplary embodiment, the disclosure is directed to a memory circuit which includes not limited to a voltage equalizing circuit configured to equalize and pre-charge a first data line and a second data line to a reference voltage, a sense amplifier circuit configured to sense a binary data based on a relative voltage between the first data line and the second data line, a read-out latch circuit configured to receive the binary data which is to be transmitted to an external controller, and a write circuit configured to receive a first signal of the first data line and a second signal of the second data line so as to write the first signal to a first bit line and the second signal to a second bit line.
    Type: Application
    Filed: August 30, 2020
    Publication date: March 3, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hua-Hsin Yu, Cheng-Hung Lee, Hung-Jen Liao, Hau-Tai Shieh
  • Patent number: 11264081
    Abstract: The disclosure is directed to a memory circuit, an electronic device, and a method of operating the memory circuit. According to an exemplary embodiment, the disclosure is directed to a memory circuit which includes not limited to a voltage equalizing circuit configured to equalize and pre-charge a first data line and a second data line to a reference voltage, a sense amplifier circuit configured to sense a binary data based on a relative voltage between the first data line and the second data line, a read-out latch circuit configured to receive the binary data which is to be transmitted to an external controller, and a write circuit configured to receive a first signal of the first data line and a second signal of the second data line so as to write the first signal to a first bit line and the second signal to a second bit line.
    Type: Grant
    Filed: August 30, 2020
    Date of Patent: March 1, 2022
    Assignee: Taiwan Semiconductor Manfacturing Company, Ltd.
    Inventors: Hua-Hsin Yu, Cheng-Hung Lee, Hung-Jen Liao, Hau-Tai Shieh
  • Patent number: 11217301
    Abstract: Embodiments herein include a first line, wherein the first line is complementary to a second line; a voltage generator configured to generate a first supply voltage, a second supply voltage and a third supply voltage, the third supply voltage is lower than the second supply voltage, the voltage generator further comprises a transistor structure with a plurality of transistors electrically connected in parallel from the first supply voltage to a supply output node that provides the second supply voltage; a memory cell electrically coupled to the first and second lines, the memory cell further comprises two cross-coupled transistor strings connected from the first supply voltage to a ground voltage; a pre-charger with a first pre-charger transistor cross-coupled to a second pre-charger transistor, the pre-charger is configured to pre-charge the first and second lines to a level of a source voltage.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: January 4, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Hua-Hsin Yu, Hau-Tai Shieh
  • Publication number: 20210397773
    Abstract: A method of designing a circuit is provided. The method includes: providing a circuit; selecting a first NMOS fin field-effect transistor (FinFET) in the circuit; and replacing the first NMOS FinFET having a first fin number with a second NMOS FinFET having a second fin number and a third NMOS FinFET having a third fin number, wherein the sum of the second fin number and the third fin number is equal to the first fin number.
    Type: Application
    Filed: April 9, 2021
    Publication date: December 23, 2021
    Inventors: Yi-Tzu Chen, Hau-Tai Shieh, Che-Ju Yeh
  • Publication number: 20210336609
    Abstract: A level shifter includes: a first inverter configured to receive an input signal in a low voltage domain and shift the input signal from the low voltage domain to a first output signal at a first output terminal in a high voltage domain higher than the low voltage domain in response to a logical high state of a first clock signal in the low voltage domain; a second inverter configured to receive a complement of the input signal and shift the complement of the input signal from the low voltage domain to a second output signal at a second output terminal in the high voltage domain in response to the logical high state; a first NMOS sensing transistor and a second NMOS sensing transistor; a PMOS transistor configured to equalize the first output signal and the second output signal in response to a logical low state of the first clock signal.
    Type: Application
    Filed: July 2, 2021
    Publication date: October 28, 2021
    Inventors: Chien-Yuan Chen, Cheng Hung Lee, Hung-Jen Liao, Hau-Tai Shieh
  • Publication number: 20210327499
    Abstract: Devices and methods are provided for word line pulse width control for a static random access memory (SRAM) devices. A control circuit includes a first transistor, an inverter coupled to the first transistor, and a second transistor comprising a gate, a first source/drain terminal and a second source/drain terminal. The second transistor is coupled to the inverter. The first source/drain terminal of the second transistor is coupled in series to the first transistor. The second source/drain terminal is coupled to a decoder driver circuit. The second transistor is configured to charge a load of a common decoder line so as to reduce an effective load of the decoder driver circuit.
    Type: Application
    Filed: June 30, 2021
    Publication date: October 21, 2021
    Inventors: Anjana Singh, Cheng Hung Lee, Hau-Tai Shieh, Yi-Tzu Chen
  • Patent number: 11120868
    Abstract: A semiconductor memory device comprising a plurality of memory cells configured to store digital data and an input multiplexer configured to enable the selection of a particular memory cell from the plurality of memory cells. The semiconductor memory device further comprises a read/write driver circuit configured to read data from the selected memory cell and write data to the selected memory cell, and a write logic block configured to provide logical control to the read/write driver circuit for writing data to the selected of memory cell. The read/write driver circuit may be coupled to the read/write input multiplexer by a data line and an inverted data line and the read and the write operations to the selected memory cell occur over the same data line and inverted data line.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: September 14, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chien-Yuan Chen, Che-Ju Yeh, Hau-Tai Shieh, Cheng Hung Lee, Hung-Jen Liao, Sahil Preet Singh, Manish Arora, Hemant Patel, Li-Wen Wang
  • Publication number: 20210241811
    Abstract: A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.
    Type: Application
    Filed: November 24, 2020
    Publication date: August 5, 2021
    Inventors: Che-Ju Yeh, Hau-Tai Shieh, Yi-Tzu Chen