Abstract: A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.

Abstract: A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

Abstract: A highly shrinkable fiber composed of nylon-MXD6 polymer and nylon-6 polymer, characterized in that a weight ratio therebetween is in the range of 35:65 to 70:30, and that each thereof exhibits a breaking strength of 4.00 cN/dtex or greater. Preferably, the weight ratio between nylon-MXD6 polymer and nylon-6 polymer of the highly shrinkable fiber is in the range of 45.55 to 55:45. The highly shrinkable fiber exhibits a high shrinkage ratio in boiling water, so that when the highly shrinkable fiber is used in a woven fabric, there can be realized a high density.

Abstract: A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

Abstract: A semiconductor manufacturing apparatus includes: a treatment chamber treating a treated film of a wafer using a desired chemical fluid; a film thickness measurement unit measuring an initial film thickness of the treated film before treatment and a final film thickness of the treated film after treatment; and a main body controlling unit calculating a treatment speed of the chemical fluid from the initial film thickness, the final film thickness, and a chemical fluid treatment time taken from the initial film thickness to the final film thickness to calculate a chemical fluid treatment time for a wafer to be treated next from the calculated treatment speed.

Abstract: There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

Abstract: There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

Abstract: A substrate cleaning apparatus is capable of individually setting a threshold value for use in making a check of a resistivity during a rinsing process on a recipe setting screen in each process step. Thus, by setting each threshold value depending on the type of liquid chemical to be used immediately before the rinsing process, the substrate cleaning apparatus can use an optimum threshold value during the rinsing process in each process step to make a check of the resistivity. This allows the proper completion of the rinsing process in each process step.

Abstract: A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

Abstract: A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

Abstract: A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

Abstract: A highly shrinkable fiber composed of nylon-MXD6 polymer and nylon-6 polymer, characterized in that a weight ratio therebetween is in the range of 35:65 to 70:30, and that each thereof exhibits a breaking strength of 4.00 cN/dtex or greater. Preferably, the weight ratio between nylon-MXD6 polymer and nylon-6 polymer of the highly shrinkable fiber is in the range of 45.55 to 55:45. The highly shrinkable fiber exhibits a high shrinkage ratio in boiling water, so that when the highly shrinkable fiber is used in a woven fabric, there can be realized a high density.

Abstract: A splittable conjugate fiber for obtaining a fiber structure excellent in denseness and bulkiness includes a polyamide resin composition and a fiber-forming polymer not having an affinity with the polyamide resin composition. The polyamide resin composition and the fiber-forming polymer are combined with each other in a fiber longitudinal direction. The polyamide resin composition contains aromatic polyamide and aliphatic polyamide. Preferably, the aromatic polyamide is a nylon MXD6 polymer, and the aliphatic polyamide is a nylon 6 polymer.

Abstract: A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

Abstract: A splittable conjugate fiber that provides a fiber structure with enhanced compactness, bulkiness and color formation has one member consisting of a polyamide resin composition containing an aromatic polyamide and an aliphatic polyamide and has another member consisting of a fiber forming polymer with no affinity to the polyamide resin composition. Preferably, the aromatic polyamide is a polyamide whose major structural units are composed of an aliphatic dicarboxylic acid and an aromatic diamine. In further preferred modes, the polyamide resin composition consists of nylon-MXD6 and nylon-6, the weight ratio therebetween ranging from 35:65 to 70:30, and the fiber forming polymer is a polyester or polyolefin.

Abstract: Disclosed herein is a method for treating a substrate wherein a chemical is fed to a surface of the substrate, the method including the steps of: initially feeding a liquid whose electric conductivity is lower than the chemical to a surface of the substrate so as to wet at least a region where the chemical is to be discharged, and discharging the chemical to the region to treat the surface of the substrate with the discharged chemical.

Abstract: According to the present invention, a process for changing the form of a processed film is performed to planarize it before the processed film which is formed on a wafer is processed in a manufacturing process of a semiconductor device. As the process for changing the form of the processed film, there may be exemplified a single wafer type wet etching process. The compatibility of the processed film with processing means is taken into consideration and, for instance, the wet etching process is applied to the processed film so as to eliminate parts incompatible with the processing means, so that a distribution in-plane of the processed film is previously improved.

Abstract: A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

Abstract: A substrate cleaning apparatus is capable of individually setting a threshold value for use in making a check of a resistivity during a rinsing process on a recipe setting screen in each process step. Thus, by setting each threshold value depending on the type of liquid chemical to be used immediately before the rinsing process, the substrate cleaning apparatus can use an optimum threshold value during the rinsing process in each process step to make a check of the resistivity. This allows the proper completion of the rinsing process in each process step.

Abstract: One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of ammonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthyl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask.