Abstract: A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

Abstract: A chemical treatment apparatus including a treatment tank filled with chemical with which wafers are treated, and a jet pipe having chemical jetting holes which is provided at the bottom portion of the treatment tank and jets the chemical from the jetting holes thereof, the jetting holes containing at least first jetting holes for jetting the chemical upwardly and second jetting holes for jetting the chemical in a direction different from that of the first holes. The second direction is set to a direction within the range from the horizontal direction of the jet pipe to the obliquely downward direction at 45 degrees with respect to the horizontal direction.

Abstract: Disclosed is a method of fabricating a semiconductor device, including the steps of: forming an interconnection pattern on the surface of a semiconductor substrate by etching; treating the interconnection pattern and a portion, not covered with the interconnection pattern, of the substrate surface using an organic amine based resist releasing liquid containing at least a lower aminoalcohol, water, and an anti-corrosion agent; and forming a SiO2 film (for example, O3-TEOS-NSG film) on the interconnection pattern and the portion, not covered with the interconnection pattern, of the substrate surface, using ozone and an organic silicon source. This is effective to reduce the pattern dependence on the thickness in SiO2 film formed on the interconnection pattern.

Abstract: An apparatus and method for drying semiconductor substrates to dry about 50 semiconductor wafers by evaporating an organic solvent and blowing the evaporated organic solvent onto these semiconductor wafers through a nozzle, comprises the evaporate organic solvent being blown onto the semiconductor wafers from a direction aslant by an angle from 20.degree. to 50.degree. from a vertical direction toward the semiconductor wafers. At this time, the initial spray amount of the evaporated organic solvent is not less than 0.8 cc/second and not more than 1.5 cc/second, additionally, the amount of the organic solvent used for drying is not less than 70 cc/batch and not more than 200 cc/batch.

Abstract: A chemical treatment apparatus including a treatment tank filled with chemical with which wafers are treated, and a jet pipe having chemical jetting holes which is provided at the bottom portion of the treatment tank and jets the chemical from the jetting holes thereof, the jetting holes containing at least first jetting holes for jetting the chemical upwardly and second jetting holes for jetting the chemical in a direction different from that of the first holes. The second direction is set to a direction within the range from the horizontal direction of the jet pipe to the obliquely downward direction at 45 degrees with respect to the horizontal direction.