Abstract: A method for manufacturing a lightweight cowl crossbar includes: producing an inner pipe, laminating a plurality of composite material layers wound around the inner pipe, and extruding an outer pipe on the winding layer, in which the plurality of composite material layers adjacent to each other are wound in different directions.

Abstract: An event detecting device may include an event signal generator configured to output a plurality of event signals, each including a first data and a second data having mutually complementary attributes and respective address data indicating positions of pixels having output the first data and the second data, a data manager configured to store one of the first data and the second data of a first one of the plurality of event signals and the respective address data in a buffer as first sub data when only one of the first data and the second data of the first one of the plurality of event signals includes the event information, and an output signal generator configured to generate an output signal using the first sub data and a second sub data when the second sub data, different from the first sub data, is stored in the buffer.

Abstract: The present disclosure provides a display device that includes an insulating layer disposed on a substrate. The display device further includes a plurality of first electrodes and contact electrodes disposed on the insulating layer. The display device further includes a plurality of light-emitting elements disposed on the plurality of first electrodes. The display device further includes a second electrode disposed on the plurality of light-emitting elements. The display device further includes a passivation layer covering the first electrode. The display device further includes a first opening hole at the passivation layer. The first opening hole extends through the passivation layer. The passivation layer has a first opening hole exposing a portion of an upper surface of the first electrode.

Abstract: The present invention relates to a polyester nonwoven fabric with suppressed reduction in physical properties by a tufting process, a method for manufacturing same, and a backing fabric for a carpet, comprising same and, in particular, to: a polyester nonwoven fabric in which, by controlling the physical properties of fibers of a first component filament and a second filament, a reduction in physical properties is remarkably suppressed before/after a tufting process, thus enabling the manufacture of a carpet backing fabric with excellent mechanical properties; a method for manufacturing same; and a backing fabric for a carpet, manufactured thereby.

Abstract: Disclosed are a display device and a method of manufacturing the display device. The display device includes a display panel on which a plurality of sub-pixels and lines connected to the sub-pixels and a driving circuit configured to drive the sub-pixels. The display panel further includes a plurality of protruded bank patterns disposed in the sub-pixels, and a light emitting element disposed in each of the bank patterns. The light emitting element includes a first electrode, a second electrode, a light emitting layer disposed between the first electrode and the second electrode, and a reflector that covers side surfaces of the light emitting layer and at least a portion of side surfaces of the first electrode. The reflector includes a first insulating layer, a second insulating layer, and a metal layer disposed between the first insulating layer and the second insulating layer.

Abstract: Disclosed is a dental orthodontic sheet having a composite structure in which different materials are stacked and bound to each other. The composite structure dental orthodontic sheet includes a first sheet layer, a second sheet layer, and an intermediate sheet layer formed between the first sheet layer and the second sheet layer, wherein the intermediate sheet layer includes a mat portion made of a softer material than each of the first sheet layer and the second sheet layer, the mat portion being formed so as to have a mesh structure, and a binding portion configured to allow mesh holes of the mat portion to be filled with materials of the first sheet layer and the second sheet layer such that the first sheet layer and the second sheet layer are bound to each other.

Abstract: An LED package includes a package substrate, a first LED chip mounted on the package substrate, a first phosphor layer disposed on the first LED chip, a reflective layer configured to surround sides of the first LED chip and the first phosphor layer; and a mask disposed on the reflective layer and including a first opening portion which exposes a surface of the first phosphor layer.

Abstract: An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an to LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.

Abstract: A light emitting device package according to example embodiments includes a plurality of light emitting device chips arranged linearly and spaced apart from each other on a substrate, and a plurality of wavelength conversion units on upper surfaces of the plurality of light emitting device chips. The plurality of wavelength conversion units may each have portions that extend over regions between the plurality of light emitting device chips. A vehicle headlight may include the light emitting device package.

Abstract: An LED package includes a package substrate, a first LED chip mounted on the package substrate, a first phosphor layer disposed on the first LED chip, a reflective layer configured to surround sides of the first LED chip and the first phosphor layer; and a mask disposed on the reflective layer and including a first opening portion which exposes a surface of the first phosphor layer.

Abstract: Provided are light emitting device package having a phosphor layer and a method of fabricating the same. A package substrate having a wiring pattern is disposed. A light emitting device mounted on the package substrate is disposed. The light emitting device has a main body having a light emitting layer therein. The light emitting device has an upper electrode on an upper surface of the main body. A bonding wire is connected to the upper electrode and the wiring pattern. A phosphor layer is formed on the light emitting device. The phosphor layer has a recessed space to accommodate the upper electrode and the bonding wire. The phosphor layer covers a side surface of the light emitting device.

Abstract: An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an to LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.

Abstract: An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.

Abstract: An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.

Abstract: A head lamp assembly including a housing; a plurality of head lamp cases installed in the housing, wherein each head lamp case comprises a light emitting diode (LED) light source, and a heat sink for dissipating heat generated from the LED light source; and a plurality of ventilating fans for circulating air in the plurality of head lamp cases and installed in the plurality of head lamp cases, respectively. Accordingly, the ventilating fans installed in the head lamp cases have opposite ventilating directions, and thus air is circulated in the head lamp cases by the ventilating fans to thus improve heat dissipation effects.

Abstract: An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.

Abstract: Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.

Abstract: A light emitting device package according to example embodiments includes a plurality of light emitting device chips arranged linearly and spaced apart from each other on a substrate, and a plurality of wavelength conversion units on upper surfaces of the plurality of light emitting device chips. The plurality of wavelength conversion units may each have portions that extend over regions between the plurality of light emitting device chips. A vehicle headlight may include the light emitting device package.

Abstract: A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.

Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.