Abstract: A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.

Abstract: A light emitting diode package including: a package substrate having a mounting area and first and second wiring structures partially exposed in the mounting area; a light emitting diode having first and second electrodes, the light emitting diode mounted on the mounting area of the package substrate to allow the first and second electrodes to be connected to first and second bonding pads, respectively; a transparent cover mounted above the mounting area of the package substrate to hermetically seal a mounting space in which the light emitting diode is mounted; and a transparent electric insulation fluid filled in the mounting space of the hermetically sealed light emitting diode and having a refractive index smaller than a refractive index of a material forming the light emitting diode.

Abstract: There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.

Abstract: A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.

Abstract: A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.

Abstract: Embodiments of the invention provide a method for removing hydrogen gas from a chamber and a method for performing a semiconductor device fabrication sub-process and removing hydrogen gas from a chamber. The method for removing hydrogen gas from a chamber comprises removing a substrate from a chamber, wherein residual hydrogen gas is disposed in the chamber, injecting oxygen gas or ozone gas into the chamber, producing plasma in the chamber, and removing OH radicals from the chamber.