Patents by Inventor Hee Seok Park
Hee Seok Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8466449Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.Type: GrantFiled: April 11, 2011Date of Patent: June 18, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Soo Min Lee, Hee Seok Park, Jae Woong Han, Seong Suk Lee, Cheol Soo Sone
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Publication number: 20120294025Abstract: An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.Type: ApplicationFiled: May 18, 2012Publication date: November 22, 2012Inventors: Hee Dong KIM, Moo Youn PARK, Soo Hwan LEE, Hee Seok PARK
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Publication number: 20120092885Abstract: A head lamp assembly including a housing; a plurality of head lamp cases installed in the housing, wherein each head lamp case comprises a light emitting diode (LED) light source, and a heat sink for dissipating heat generated from the LED light source; and a plurality of ventilating fans for circulating air in the plurality of head lamp cases and installed in the plurality of head lamp cases, respectively. Accordingly, the ventilating fans installed in the head lamp cases have opposite ventilating directions, and thus air is circulated in the head lamp cases by the ventilating fans to thus improve heat dissipation effects.Type: ApplicationFiled: September 8, 2011Publication date: April 19, 2012Inventors: Jong-pa HONG, Hyoung-cheol CHO, Hee-seok PARK, Joong-kon SON
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Patent number: 8129741Abstract: The present invention provides a light emitting diode package including: a package mold having a first cavity and a second cavity with a smaller size than that of the first cavity; first and second electrode pads provided on the bottom surfaces of the first cavity and the second cavity, respectively; an LED chip mounted on the first electrode pad; a wire for providing electrical connection between the LED chip and the second electrode pad; and a molding material filled within the first cavity and the second cavity.Type: GrantFiled: October 29, 2009Date of Patent: March 6, 2012Assignee: Samsung LED Co., Ltd.Inventors: Jin Bock Lee, Hee Seok Park, Hyung Kun Kim, Young Jin Lee
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Publication number: 20110300652Abstract: There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.Type: ApplicationFiled: August 16, 2011Publication date: December 8, 2011Applicant: Samsung LED Co., Ltd.Inventors: Seong Eun Park, Bang Won OH, Gil Han Park, Min Ho Kim, Rak Jun Choi, Young Min Park, Hee Seok Park
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Patent number: 7998767Abstract: A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.Type: GrantFiled: February 12, 2010Date of Patent: August 16, 2011Assignee: Samsung LED Co., Ltd.Inventors: Tae Won Lee, Hee Seok Park, Masayoshi Koike
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Publication number: 20110186815Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.Type: ApplicationFiled: April 11, 2011Publication date: August 4, 2011Applicant: SAMSUNG LED CO., LTD.Inventors: Soo Min LEE, Hee Seok Park, Jae Woong Han, Seong Suk Lee, Cheol Soo Sone
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Patent number: 7923716Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.Type: GrantFiled: August 8, 2008Date of Patent: April 12, 2011Assignee: Samsung LED Co., Ltd.Inventors: Soo Min Lee, Hee Seok Park, Jae Woong Han, Seong Suk Lee, Cheol Soo Sone
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Patent number: 7915607Abstract: A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.Type: GrantFiled: March 13, 2009Date of Patent: March 29, 2011Assignee: Samsung LED Co., Ltd.Inventors: Seong Suk Lee, Hee Seok Park, Jae Woong Han
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Publication number: 20110042690Abstract: The present invention provides a light emitting diode package including: a package mold having a first cavity and a second cavity with a smaller size than that of the first cavity; first and second electrode pads provided on the bottom surfaces of the first cavity and the second cavity, respectively; an LED chip mounted on the first electrode pad; a wire for providing electrical connection between the LED chip and the second electrode pad; and a molding material filled within the first cavity and the second cavity.Type: ApplicationFiled: October 29, 2009Publication date: February 24, 2011Inventors: Jin Bock LEE, Hee Seok Park, Hyung Kun Kim, Young Jin Lee
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Publication number: 20100210051Abstract: A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.Type: ApplicationFiled: February 12, 2010Publication date: August 19, 2010Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Won Lee, Hee Seok Park, Masayoshi Koike
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Publication number: 20100176374Abstract: A nitride semiconductor device according to an aspect of the invention may include: first and second conductive nitride semiconductor layers; and an active layer having a DH structure located between the first and second conductive nitride semiconductor layers, and including a single quantum well structure active layer having the single quantum well structure includes at least one polarization relaxation layer formed of a nitride single crystal having a higher energy band gap than the quantum well.Type: ApplicationFiled: January 13, 2009Publication date: July 15, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTDInventors: Jae Woong HAN, Hee Seok PARK, Seong Suk LEE, Soo Min LEE
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Publication number: 20100090246Abstract: Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.Type: ApplicationFiled: December 4, 2008Publication date: April 15, 2010Inventors: Jin Bock LEE, Jin Hyun Lee, Hee Seok Park, Pun Jae Choi, Jong In Yang
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Patent number: 7691651Abstract: In a method for manufacturing a high-quality GaN-based semiconductor layer on a substrate of different material, an AlN nucleation layer is grown on a substrate, a GaN buffer layer is grown on the AlN nucleation layer, and the substrate annealed. The AlN nucleation layer is formed to have a thickness greater than a critical radius of a nucleus of AlN crystal and less than a critical resilient thickness of AlN, and the GaN buffer layer is formed to have a thickness greater than a critical radius of a nucleus of GaN crystal and less than a critical resilient thickness of GaN. Annealing time is greater than L2/DGa where L indicates a diffusion distance of Ga, and DGa indicates a diffusion coefficient of Ga in the AlN nucleation layer.Type: GrantFiled: June 8, 2006Date of Patent: April 6, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventor: Hee Seok Park
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Publication number: 20100080257Abstract: A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.Type: ApplicationFiled: March 13, 2009Publication date: April 1, 2010Inventors: Seong Suk LEE, Hee Seok Park, Jae Woong Han
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Patent number: 7683385Abstract: A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.Type: GrantFiled: February 16, 2007Date of Patent: March 23, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Won Lee, Hee Seok Park, Masayoshi Koike
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Patent number: 7612361Abstract: The invention provides a method for growing a nitride single crystal on a silicon wafer and a method for manufacturing a light emitting device using the same. In growing the nitride single crystal according to one aspect of the invention, first, a silicon substrate having a surface in (111) crystal orientation is prepared. A first nitride buffer layer is formed on the surface of the silicon substrate. Then, an amorphous oxide film is disposed on the first nitride buffer layer. A second buffer layer is disposed on the amorphous oxide film. Thereafter, the nitride single crystal is formed on the second nitride buffer layer.Type: GrantFiled: July 19, 2007Date of Patent: November 3, 2009Assignees: Samsung Electro-Mechanics Co., Ltd., Ioffe Physico-Technical Institute RASInventors: Hee Seok Park, Zhilyaev Yuri Vasilievich, Bessolov Vasiliy Nikolaevich
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Publication number: 20090146132Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.Type: ApplicationFiled: August 8, 2008Publication date: June 11, 2009Inventors: Soo Min LEE, Hee Seok Park, Jae Woong Han, Seong Suk Lee, Cheol Soo Sone
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Patent number: 7524692Abstract: The present invention provides methods for manufacturing a nitride layer and a vertical nitride semiconductor light emitting device. In manufacturing the nitride layer according to the invention, a sapphire substrate is prepared. A buffer layer made of a material having a melting point and a thermal conductivity higher than those of nitride is formed on the sapphire substrate. Also, the nitride layer is formed on the buffer layer. Then a laser beam is irradiated to an underside of the sapphire substrate to remove the nitride layer. According to the invention, the nitride layer is made of a material having a composition expressed by AlxInyGa(1-x-y)N, where 0?x?1, 0?y?1, and 0?x+y?1. In addition, the buffer layer is made of SiC.Type: GrantFiled: April 25, 2006Date of Patent: April 28, 2009Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Hee Seok Park, Masayoshi Koike, Kyeong Ik Min
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Publication number: 20080099781Abstract: A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.Type: ApplicationFiled: September 18, 2007Publication date: May 1, 2008Inventors: Rak Jun Choi, Kureshov Vladimir, Bang Won Oh, Gil Han Park, Hee Seok Park, Seong Eun Park, Young Min Park, Min Ho Kim