Patents by Inventor Heike E. Riel
Heike E. Riel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9620360Abstract: A method comprises providing a cavity structure on the substrate comprising a first growth channel extending in a first direction, a second growth channel extending in a second direction, wherein the second direction is different from the first direction and the second channel is connected to the first channel at a channel junction, a first seed surface in the first channel, at least one opening for supplying precursor materials to the cavity structure, selectively growing from the first seed surface a first semiconductor structure substantially only in the first direction and in the first channel, thereby forming a second seed surface for a second semiconductor structure at the channel junction, growing in the second channel the second semiconductor structure in the second direction from the second seed surface, thereby forming the semiconductor junction comprising the first and the second semiconductor structure.Type: GrantFiled: November 27, 2015Date of Patent: April 11, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Mattias B. Borg, Kirsten E. Moselund, Heike E. Riel, Heinz Schmid
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Publication number: 20170009372Abstract: A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.Type: ApplicationFiled: September 12, 2016Publication date: January 12, 2017Applicant: International Business Machines CorporationInventors: Mikael T. BJOERK, Heike E. RIEL, Heinz SCHMID
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Patent number: 9543492Abstract: A thermoelectric element includes a body formed of a single thermoelectric material and extending in a first direction along which a thermal gradient is established in thermoelectric operation, wherein the body has at least first and second adjacent sections in the first direction; at least one of the sections is subject to stress which is applied to that section substantially all around a central axis of the body in the first direction; and the arrangement is such that the stress results in different strain in the first and second sections producing an energy barrier in the body to enhance thermoelectric operation.Type: GrantFiled: August 14, 2013Date of Patent: January 10, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Bernd W. Gotsmann, Siegfried F. Karg, Heike E. Riel
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Publication number: 20170005251Abstract: A thermoelectric device for transferring heat from a heat source to a heat sink. The device includes a first thermoelectric leg pair having a first leg including an n-type semiconductor material and a second leg including a p-type semiconductor material, wherein the first leg and the second leg are electrically coupled in series; a second thermoelectric leg pair has a third leg including an n-type semiconductor material and a fourth leg including a p-type semiconductor material, wherein the third leg and the fourth leg are electrically coupled in series; a first contact placed between the first leg and the fourth leg and a second contact placed between the second leg and the third leg. A method for manufacturing a thermoelectric device is also provided.Type: ApplicationFiled: December 8, 2014Publication date: January 5, 2017Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Heike E. Riel, Volker Schmidt
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Publication number: 20160351391Abstract: Methods are provided for fabricating semiconductor nanowires on a substrate. A nanowire template is formed on the substrate. The nanowire template defines an elongate tunnel which extends, laterally over the substrate, between an opening in the template and a seed surface. The seed surface is exposed to the tunnel and of an area up to about 2×104 nm2. The semiconductor nanowire is selectively grown, via said opening, in the template from the seed surface. The area of the seed surface is preferably such that growth of the nanowire proceeds from a single nucleation point on the seed surface. There is also provided a method for fabricating a plurality of semiconductor nanowires on a substrate and a semiconductor nanowire and substrate structure.Type: ApplicationFiled: December 8, 2014Publication date: December 1, 2016Inventors: MATTIAS BENGT BORG, KIRSTEN EMILIE MOSELUND, HEIKE E RIEL, HEINZ SCHMID
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Patent number: 9487884Abstract: A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.Type: GrantFiled: May 23, 2011Date of Patent: November 8, 2016Assignee: International Business Machines CorporationInventors: Mikael T. Bjoerk, Heike E. Riel, Heinz Schmid
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Publication number: 20160291249Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.Type: ApplicationFiled: June 10, 2016Publication date: October 6, 2016Inventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike E. Riel
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Patent number: 9384975Abstract: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.Type: GrantFiled: January 14, 2015Date of Patent: July 5, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Bernd W. Gotsmann, Siegfried F. Karg, Heike E. Riel
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Publication number: 20160155798Abstract: A method for manufacturing a semiconductor structure comprises the steps of: providing a substrate including a first semiconductor material; forming a dielectric layer on a surface of the substrate; forming an opening in the dielectric layer having a bottom reaching the substrate; providing a second semiconductor material in the opening and on the substrate, the second semiconductor material being en-capsulated by a further dielectric material thereby forming a filled cavity; melting the second semiconductor material in the cavity; recrystallizing the second semi-conductor material in the cavity; laterally removing the second semiconductor material at least partially for forming a lateral surface at the second semiconductor material; and forming a third semiconductor material on the lateral surface of the second semiconductor material, wherein the third semiconductor material is different from the second semiconductor material.Type: ApplicationFiled: November 20, 2015Publication date: June 2, 2016Inventors: MATTIAS B. BORG, KIRSTEN E. MOSELUND, HEIKE E. RIEL, HEINZ SCHMID
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Patent number: 9293467Abstract: A tunnel field-effect transistor (TFET) device includes first and second semiconductor contact regions separated by a semiconductor channel region; a channel gate overlying the channel region; and first and second doping gates overlying the first and second contact regions respectively; wherein application of a positive voltage level at the first doping gate and a negative voltage level at the second doping gate produces an n-type first contact region and a p-type second contact region, and reversing the voltage levels at the doping gates produces a p-type first contact region and an n-type second contact region.Type: GrantFiled: September 18, 2014Date of Patent: March 22, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Kirsten E. Moselund, Heike E. Riel
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Patent number: 9245750Abstract: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.Type: GrantFiled: January 14, 2015Date of Patent: January 26, 2016Assignee: International Business Machines CorporationInventors: Bernd W. Gotsmann, Siegfried F. Karg, Heike E. Riel
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Patent number: 9239424Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.Type: GrantFiled: January 28, 2014Date of Patent: January 19, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike E Riel
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Publication number: 20150308891Abstract: An optical spectrometer contains a photodiode and a straining mechanism for imposing adjustable strain on the photodiode. The spectrometer includes a measurement apparatus for measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism. Adjusting the strain allows adjustment of the band gap Eg of the photosensitive region of the photodiode, and this determines the cut-off energy for absorption of photons. Measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism allows study of photons within a desired energy range of the band gap energy corresponding to each strain value.Type: ApplicationFiled: November 8, 2013Publication date: October 29, 2015Inventors: Bernd W. Gotsmann, Siegfried F. Karg, Emanuel Loertscher, Heike E. Riel, Giorgio Signorello
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Publication number: 20150212266Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.Type: ApplicationFiled: January 28, 2014Publication date: July 30, 2015Applicant: International Business Machines CorporationInventors: Lukas Czornomaz, Jens Hofrichter, Mirja Richter, Heike E. Riel
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Publication number: 20150171301Abstract: A thermoelectric device for transferring heat from a heat source to a heat sink includes at least one thermoelectric leg pair having a first leg including an n-type semiconductor material and a second leg including a p-type semiconductor material. The first leg and the second leg are electrically coupled in series. A resistive element electrically couples the first leg and the second leg between the heat source and the heat sink.Type: ApplicationFiled: September 25, 2014Publication date: June 18, 2015Inventors: Heike E. Riel, Volker Schmidt
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Publication number: 20150137073Abstract: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.Type: ApplicationFiled: January 14, 2015Publication date: May 21, 2015Inventors: Bernd W. Gotsmann, Siegfried F. Karg, Heike E. Riel
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Publication number: 20150140793Abstract: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.Type: ApplicationFiled: January 14, 2015Publication date: May 21, 2015Inventors: Bernd W. Gotsmann, Siegfried F. Karg, Heike E. Riel
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Publication number: 20150090959Abstract: A tunnel field-effect transistor (TFET) device includes first and second semiconductor contact regions separated by a semiconductor channel region; a channel gate overlying the channel region; and first and second doping gates overlying the first and second contact regions respectively; wherein application of a positive voltage level at the first doping gate and a negative voltage level at the second doping gate produces an n-type first contact region and a p-type second contact region, and reversing the voltage levels at the doping gates produces a p-type first contact region and an n-type second contact region.Type: ApplicationFiled: September 18, 2014Publication date: April 2, 2015Inventors: Kirsten E. Moselund, Heike E. Riel
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Patent number: 8969179Abstract: A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.Type: GrantFiled: November 2, 2011Date of Patent: March 3, 2015Assignee: International Business Machines CorporationInventors: Bernd W Gotsmann, Siegfried F. Karg, Heike E. Riel
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Patent number: 8969931Abstract: A semiconductor device and a method for fabricating the semiconductor device. The device includes: a doped semiconductor having a source region, a drain region, a channel between the source and drain regions, and an extension region between the channel and each of the source and drain regions; a gate formed on the channel; and a screening coating on each of the extension regions. The screening coating includes: (i) an insulating layer that has a dielectric constant that is no greater than about half that of the extension regions and is formed directly on the extension regions, and (ii) a screening layer on the insulating layer, where the screening layer screens the dopant ionization potential in the extension regions to inhibit dopant deactivation.Type: GrantFiled: October 18, 2010Date of Patent: March 3, 2015Assignee: International Business Machines CorporationInventors: Mikael T. Bjoerk, Joachim Knoch, Heike E. Riel, Walter Heinrich Riess, Heinz Schmid