Abstract: A new simple transfection method using an integrated electrowetting nano-injector (“INENI”) with controlled dosage delivery and high transfection efficiency is disclosed. The volume of delivery can be controlled via voltage application to an inner and outer electrode integrated into a nano-pipette. With higher voltages, more liquid enters the INENI and with lower voltages liquid is expelled. This method can be used to deliver plasmid DNA directly into the nuclei of cells. The INENI requires only the use of a single probe since both electrodes are integrated into the same nano-pipette. Hence, more space is available, and ergo the INENI offers a simplistic means for direct injection of metered amounts of exogenous material into the confines of a cell cytoplasm and/or nucleus while retaining full cell viability.

Abstract: A new simple transfection method using an integrated electrowetting nano-injector (“INENI”) with controlled dosage delivery and high transfection efficiency is disclosed. The volume of delivery can be controlled via voltage application to an inner and outer electrode integrated into a nano-pipette. With higher voltages, more liquid enters the INENI and with lower voltages liquid is expelled. This method can be used to deliver plasmid DNA directly into the nuclei of cells. The INENI requires only the use of a single probe since both electrodes are integrated into the same nano-pipette. Hence, more space is available, and ergo the INENI offers a simplistic means for direct injection of metered amounts of exogenous material into the confines of a cell cytoplasm and/or nucleus while retaining full cell viability.

Abstract: A trench structure and an integrated circuit comprising sub-lithographic trench structures in a substrate. In one embodiment the trench structure is created by forming sets of trenches with a lithographic mask and filling the sets of trenches with sets of step spacer blocks comprising two alternating spacer materials which are separately removable from each other. In one embodiment, the trench structures formed are one-nth the thickness of the lithographic mask's feature size. The size of the trench structures being dependent on the thickness and number of spacer material layers used to form the set of step spacer blocks. The number of spacer material layers being n/2 and the thickness of each spacer material layer being one-nth of the lithographic mask's feature size.

Abstract: A trench structure and an integrated circuit comprising sub-lithographic trench structures in a substrate. In one embodiment the trench structure is created by forming sets of trenches with a lithographic mask and filling the sets of trenches with sets of step spacer blocks comprising two alternating spacer materials which are separately removable from each other. In one embodiment, the trench structures formed are one-nth the thickness of the lithographic mask's feature size. The size of the trench structures being dependent on the thickness and number of spacer material layers used to form the set of step spacer blocks. The number of spacer material layers being n/2 and the thickness of each spacer material layer being one-nth of the lithographic mask's feature size.

Abstract: A trench structure and an integrated circuit comprising sub-lithographic trench structures in a substrate. In one embodiment the trench structure is created by forming sets of trenches with a lithographic mask and filling the sets of trenches with sets of step spacer blocks comprising two alternating spacer materials which are separately removable from each other. In one embodiment, the trench structures formed are one-nth the thickness of the lithographic mask's feature size. The size of the trench structures being dependent on the thickness and number of spacer material layers used to form the set of step spacer blocks. The number of spacer material layers being n/2 and the thickness of each spacer material layer being one-nth of the lithographic mask's feature size.

Abstract: A trench structure and an integrated circuit comprising sub-lithographic trench structures in a substrate. In one embodiment the trench structure is created by forming sets of trenches with a lithographic mask and filling the sets of trenches with sets of step spacer blocks comprising two alternating spacer materials which are separately removable from each other. In one embodiment, the trench structures formed are one-nth the thickness of the lithographic mask's feature size. The size of the trench structures being dependent on the thickness and number of spacer material layers used to form the set of step spacer blocks. The number of spacer material layers being n/2 and the thickness of each spacer material layer being one-nth of the lithographic mask's feature size.

Abstract: A method to form sub-lithographic trench structures in a substrate and an integrated circuit comprising sub-lithographic trench structures in a substrate. The method includes forming sets of trenches with a lithographic mask and filling the sets of trenches with sets of step spacer blocks comprising two alternating spacer materials which are separately removable from each other. In one embodiment, the trench structures formed are one-nth the thickness of the lithographic mask's feature size. The size of the trench structures being dependent on the thickness and number of spacer material layers used to form the set of step spacer blocks. The number of spacer material layers being n/2 and the thickness of each spacer material layer being one-nth of the lithographic mask's feature size.

Abstract: An assembly and method for recording and/or reading high-density data includes a phase change media, an antenna placed adjacent the phase change media, and a source of electromagnetic radiation.

Abstract: A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.

Abstract: A method and apparatus for separating molecules comprises placing different kinds of molecular species onto a probe; and introducing an electric field between the probe and a surface in proximity with the probe so that the different kinds of molecular species may be separated, wherein the different kinds of molecular species have differing mobilities, and wherein the different kinds of molecular species may be separated according to their differing mobilities, such that molecular species that have different mobilities migrate along the probe at different speeds towards the surface. The molecular species may comprise molecules. Alternatively, the molecular species may comprise molecular assemblies, wherein the molecular assemblies may comprise at least one of cells, bacteria, and viruses.

Abstract: A method to form sub-lithographic trench structures in a substrate and an integrated circuit comprising sub-lithographic trench structures in a substrate. The method includes forming sets of trenches with a lithographic mask and filling the sets of trenches with sets of step spacer blocks comprising two alternating spacer materials which are separately removable from each other. In one embodiment, the trench structures formed are one-nth the thickness of the lithographic mask's feature size. The size of the trench structures being dependent on the thickness and number of spacer material layers used to form the set of step spacer blocks. The number of spacer material layers being n/2 and the thickness of each spacer material layer being one-nth of the lithographic mask's feature size.

Abstract: Disclosed are a phase change memory cell and a method of forming the memory cell. The memory cell comprises a main body of phase change material connected directly to a bottom contact and via a narrow channel of phase change material to a top contact. The channel is tapered from the top contact towards the main body. A minimum width of the channel has a less than minimum lithographic dimension and is narrower than a width of the main body. Therefore, the channel provides a confined region for the switching current path and restricts phase changing to within the channel. In addition an embodiment of the memory cell isolates the main body of phase change material by providing a space between the phase change material and the cell walls. The space allows the phase change material to expand and contract and also limits heat dissipation.

Abstract: A device for generating an x-ray point source includes a target, and an electron source for producing electrons which intersect with the target to generate an x-ray point source having a size which is confined by a dimension of the target.

Abstract: A device for generating an x-ray point source includes a target, and an electron source for producing electrons which intersect with the target to generate an x-ray point source having a size which is confined by a dimension of the target.

Abstract: An assembly and method for recording and/or reading high-density data includes a phase change media, an antenna placed adjacent the phase change media, and a source of electromagnetic radiation.

Abstract: A device for generating an x-ray point source includes a target, and an electron source for producing electrons which intersect with the target to generate an x-ray point source having a size which is confined by a dimension of the target.

Abstract: A method for patterning a recording medium selectively thermally couples a recording medium and a heat source to alter a chemical composition of the recording medium. An apparatus for patterning a recording medium has a heat source for generating and directing an incident thermal wave to a recording medium so as to alter a chemical composition of the recording medium, and a controller for coordinating a mutual position of the incident thermal wave and the recording medium for inducing a direct thermal coupling between the recording medium and the heat source.

Abstract: A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a phase change in the phase change material; and electrical lines configured to pass current through the heating element, wherein the phase change material and the heating element are arranged in a configuration other than being electrically connected in series. The memory cell further comprises a sensing element in thermal contact with the phase change material, wherein the sensing element is adapted to detect a change in at least one physical property of the phase change material, wherein the sensing element is adapted to detect a change in a thermal conductivity of the phase change material.

Abstract: A hard disk drive slider has an air bearing surface that uses the ambient air in the disk drive as a heat source for thermal-assisted recording. Incoming air between the slider and the disk surface is pressurized to produce heat sufficient to heat the recording media. A very small thermal pad is located at the trailing end of the air bearing surface and wraps around the magnetic recording head. The thermal pad includes small pockets to contain the heated air to provide heat to the recording media. The air can be pressurized to approximately 80 atm, which is sufficient to raise the air temperature to approximately 800 degrees C. at isentropic conditions. The heated air transfers the heat energy to the recording media by conduction to elevate a disk recording layer temperature for thermomagnetic recording.

Abstract: A device for generating an x-ray point source includes a target, and an electron source for producing electrons which intersect with the target to generate an x-ray point source having a size which is confined by a dimension of the target.