Abstract: Semiconductor islands respectively comprise at least a Si.sub.1-x Ge.sub.x layer and a distorted silicon layer that exhibits essentially the same lattice constant as the Si.sub.1-x Ge.sub.x layer are formed on an insulating layer that is located on a carrier plate. The semiconductor islands are preferably formed by selective epitaxy and comprise p-channel MOS transistors and/or n-channel MOS transistors.

Abstract: A trench capacitor with an epi layer in the lower portion of the trench. The epi layer serves as the buried plate of the trench capacitor. A diffusion region surrounds the lower portion of the trench to enhance the dopant concentration of the epi layer. The diffusion region is formed by, for example, gas phase doping, plasma doping, or plasma immersion ion implantation.

Abstract: For manufacturing fine structures, nuclei that define the dimensions of the fine structures are formed on the surface of a substrate in a CVD process upon employment of a first process gas that contains SiH.sub.4 and GeH.sub.4 in a carrier gas. The nuclei can be employed both as a mask, for example, when etching or implanting, as will as active or passive component parts that remain in the structure, for example, as charge storages in the dielectric of an EEPROM.

Abstract: In producing a CMOS circuit, an n-channel MOS transistor and a p-channel MOS transistor are formed in a semiconductor substrate. In situ p-doped, monocrystalline silicon structures are formed by epitaxial growth selectively with respect to insulating material and with respect to n-doped silicon, such silicon structures being suitable as a diffusion source for forming source/drain regions of the p-channel MOS transistor. The source/drain regions of the n-channel MOS transistor are produced beforehand by means of implantation or diffusion. Owing to the selectivity of the epitaxy that is used, it is not necessary to cover the n-doped source/drain regions of the n-channel MOS transistor during the production of the p-channel MOS transistor.

Abstract: A fire-extinguishing device is furnished, wherein an aerosol is generated in a single container or in a plurality of containers by burning a solid extinguishing agent. The aerosol streams and flows into the area to be protected along a nondirect path through annular channels or directly through a sieve floor.

Abstract: A sprinkler for automatic fire extinguishing plants according to the dry system is furnished for rooms subjected to and endangered by freezing and frost. Such plants are furnished in particular in case of the presence of a suspended ceiling with downwardly branching pipe pieces. In order to adapt the downwardly branching pipe pieces to the prevailing construction conditions, the branching pipe pieces are furnished by two pipe pieces screwed to each other. The two pipe pieces exhibit a support body at the upper end and a sprinkler at the lower end. The two parts are connected via two rods or pipes, screwed to each other, to form the special sprinkler.

Abstract: An opto-electronic semiconductor component having a light transmission or receiving property including a light emitting or detecting active zone lying parallel to the principle surface of the semiconductor crystal is formed so that it detects or emits light directed parallel to the active zone with high efficiency. This enables the component to be hybridize with other electrical, electro-optical or optical elements in a single plane. At least one lateral surface of the semiconductor crystal is inclined at an angle to the principle surface of the component such that light directed into or from the crystal in a direction parallel to the active zone experiences deflection by refraction or reflection toward or away from the active zone.