Abstract: Proposed is a method for manufacturing micromechanical sensors and sensors manufactured by this method, where openings are introduced into a semiconductor substrate. After the openings are introduced into the semiconductor substrate, a subsequent temperature treatment is carried out, in which the openings are converted into voids in the depth of the substrate.

Abstract: A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Abstract: A micromechanical component having a silicon substrate; a cavity provided in the substrate; and a diaphragm, provided on the surface of the substrate, which closes the cavity; the diaphragm featuring a silicon-oxide layer having an opening that is formed by silicon-oxide wedges pointing to each other; and the diaphragm having at least one closing layer which closes the opening. Also, a suitable manufacturing method.

Abstract: A manufacturing method and a micromechanical component are provided in which porous silicon is used as sacrificial layer and a functional layer is exposed by etching off the sacrificial layer.

Abstract: A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Abstract: The invention relates to a sensor assembly for measuring a gas concentration, in particular CO, H2, NOx and/or hydrocarbons. The aim of the invention is to permit an accurate measurement by relatively simple means, ii particular at low cost. To achieve this, the sensor assembly is provided with an insulation material that is applied to the substrate (2) and comprises one or more insulation layers (4, 6, 8, 10), at least one first electrode structure (12, 13) that is provided in or on the insulation material, at least one second electrode structure (14, 15) that is provided in or on the insulation material and is placed at a vertical distance from the first electrode structure, a gas-sensitive layer (16), which borders the first electrode structure (12, 13) and the second electrode structure (14, 15) and a heating conductor structure (7) that is located in the insulation material (4, 6, 8, 10).

Abstract: A micromechanical component includes a substrate and a cover layer deposited on the substrate, underneath the cover layer, a region of porous material being provided which mechanically supports and thermally insulates the cover layer. On the cover layer, a heating device is provided to heat the cover layer above the region; and above the region, a detector is provided to measure an electric property of a heated medium provided above the region on the cover layer.

Abstract: A micromechanical structural element, having a very stable diaphragm, implemented in a pure front process and in a layer construction on a substrate. The layer construction includes at least one sacrificial layer and one diaphragm layer above the sacrificial layer, which is structured for laying bare the diaphragm and generating stabilizing elements on the diaphragm, at least one recess being generated for a stabilizing element of the diaphragm. The structure generated in the sacrificial layer is then at least superficially closed with at least one material layer being deposited above the structured sacrificial layer, this material layer forming at least a part of the diaphragm layer and being structured to generate at least one etch hole for etching the sacrificial layer, which is removed from the region under the etch hole, the diaphragm and the at least one stabilizing element being laid bare, a cavity being created under the diaphragm.

Abstract: A method of producing conducting tracks and resistors in a semiconductor element that includes at least one conductive layer. The conductive layer is regionally through-oxidized so that at least one region of the conductive layer is electrically insulated by the oxidized regions with respect to the remaining regions of the conductive layer.

Abstract: A method is proposed which will enable cavities having optically transparent walls to be produced simply and cost-effectively in a component by using standard methods of microsystems technology. For this purpose, a silicon region is first produced, which is surrounded on all sides by at least one optically transparent cladding layer. At least one opening is then produced in the cladding layer. Over this opening, the silicon surrounded by the cladding layer is dissolved out, forming a cavity within the cladding layer. In this context, the cladding layer acts as an etch barrier layer.

Abstract: A sensor element has at least one heater structure, at least one first circuit trace being provided via which current is injected into the heater structure; at least one second circuit trace being provided via which the current is coupled out of the heater structure, and an arrangement for detecting the resistances of individual sections of the heater structure. According to the present invention, the arrangement for detecting the resistances includes additional, high-resistance measuring lines by which the voltage is tapped directly at the individual segments of the heater structure.

Abstract: A micromechanical component in which lateral deformations, i.e., deformations of the component parallel to its two main surfaces, are concentrated in a defined area of the component structure, making it possible to decouple lateral and vertical stresses in the component. The component structure includes at least one bellows-like structure in which lateral deformations of the component are concentrated. A pressure sensor having a micromechanical component of this type may be used, for example, for measured-value detection.

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract: A flow sensor, in particular an air mass sensor, in which two heating resistors are used and a temperature sensor is assigned to each of these heating resistors. This makes more accurate and rapid measurement of the mass of air possible.

Abstract: A micromechanical component having a substrate and a diaphragm positioned on the substrate. Underneath the diaphragm a region made of porous material is provided, which mechanically supports the diaphragm and thermally insulates it.

Abstract: A mass flow sensor is described. To improve the membrane stability of the known mass flow sensor, in particular the reoxide layer which is present in the known mass flow sensor is replaced by a thicker PECVD silicon oxide layer. The thickness of the silicon oxide layer deposited on the platinum layer is increased, and the known mass flow sensor is also provided with a cover layer of PECVD silicon nitride forming a moisture barrier.

Abstract: A micromechanical component having a substrate made from a substrate material having a first doping type, a micromechanical functional structure provided in the substrate and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones made from the substrate material having a second doping type, the zones being at least partially surrounded by a cavity, and the cover layer has a porous layer made from the substrate material.

Abstract: A simple and cost-effective possibility is proposed for producing optically transparent regions (5, 6) in a silicon substrate (1), by the use of which both optically transparent regions of any thickness and optically transparent regions over a cavity in a silicon substrate are able to be implemented.

Abstract: The present invention relates in particular to a semiconductor component, such as especially a humidity sensor (200, 300, 400, 500, 600, 700, 800), which has a semiconductor substrate (101), like in particular of silicon, a first electrode (102) and a second electrode (202) and at least one first layer (101) that is accessible for a medium acting from the outside on the semiconductor component, the first layer being arranged at least partially between the first and the second electrode.

Abstract: Proposed is a method for manufacturing micromechanical sensors and sensors manufactured by this method, where openings (2) are introduced into a semiconductor substrate (1). After the openings (2) are introduced into the semiconductor substrate (1), a subsequent temperature treatment is carried out, in which the openings (2) are converted into voids in the depth of the substrate (1).