Abstract: A method for manufacturing a semiconductor component (100; . . . ; 700), a multilayer semiconductor component in particular, preferably a micromechanical component, such as a heat transfer sensor in particular having a semiconductor substrate (101), in particular made of silicon, and a sensor region (404).

Abstract: A micromechanical component (10) in which lateral deformations, i.e., deformations of the component (10) parallel to its two main surfaces, are concentrated in a defined area of the component structure, making it possible to decouple lateral and vertical stresses in the component (10). The component structure includes at least one bellows-like structure (11) in which lateral deformations of the component (10) are concentrated.

Abstract: A micromechanical component is described which includes a substrate (1); a monocrystalline layer (10), which is provided above the substrate (1) and which has a membrane area (10a); a cavity (50) that is provided underneath the membrane area (10a); and one or more porous areas (150; 150′), which are provided inside the monocrystalline layer (10) and which have a doping (n+; p+) that is higher than that of the surrounding layer (10).

Abstract: A method of producing a semiconductor component (300; 400; 500; 600; 700; 800; 900; 1000; 1100), in particular a multilayer semiconductor component, and a semiconductor component produced by this method are described, where the semiconductor component has in particular a mobile mass, i.e., an oscillator structure (501, 502; 601, 702) according to the preambles of the respective independent patent claims.

Abstract: A micromechanical component is proposed having a substrate (10) and a cover layer (40) deposited on the substrate (10), underneath the cover layer (40), a region (30; 30′) of porous material being provided which mechanically supports and thermally insulates the cover layer (40). On the cover layer (40), a heating device (70) is provided to heat the cover layer (40) above the region (30; 30′); and above the region (30; 30′), a detector (200, 200′) is provided to measure an electric property of a heated medium (150) provided above the region (30; 30′) on the cover layer (40).

Abstract: A micromechanical component having a substrate (10) made from a substrate material having a first doping type (p), a micromechanical functional structure provided in the substrate (10) and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones (15; 15a; 15b; 15c; 730; 740; 830) made from the substrate material having a second doping type (n), the zones being at least partially surrounded by a cavity (50; 50e-f), and the cover layer has a porous layer (30) made from the substrate material.

Abstract: In a method for manufacturing a sensor having a membrane, a silicon nitride layer is deposited on the upper side of a silicon substrate. For that, an LPCVD or PECVD process is used. From the lower side of the silicon substrate, an opening is etched in which ends at the lower side of the silicon nitride layer.

Abstract: A mass flow sensor is described. To improve the membrane stability of the known mass flow sensor and to increase the thermal conductivity of a membrane having a greater mechanical stability, in particular the membrane has at least one dielectric or nonconducting adjustment layer with a thermal conductivity which is greater than that of a silicon oxide layer of the same thickness, the adjustment layer being used to adjust the thermal conductivity of the membrane. One of the preferred adjustment layers is polycrystalline silicon.

Abstract: A micromechanical component, in particular a mass flow sensor, includes a tongue made of a micromechanical material that is elastically bendable under the influence of an external pressure acting on a surface region of the tongue, in which a piezoresistive resistance device is provided on the elastic tongue, in which a holding device holds a region of the elastic tongue, and in which the holding device is arranged so that the external pressure causes a change in the mechanical stress at the location of the tongue in the region of the piezoresistive resistance device.

Abstract: A method is described for producing a semiconductor component (100; . . . ; 2200) particularly a multilayer semiconductor element, preferably a micromechanical component, particularly a pressure sensor, having a semiconductor substrate (101), particularly made of silicon, and a semiconductor component produced according to the method.

Abstract: A micromechanical component having a substrate and a diaphragm positioned on the substrate. Underneath the diaphragm a region made of porous material is provided, which mechanically supports the diaphragm and thermally insulates it.

Abstract: A process for producing a sensor membrane substrate, in particular, for a mass flow sensor or a pressure sensor, the substrate having on its front a membrane, which is fixed at the edge of an opening that is etched free from the back. The process includes the following steps: providing a substrate; local thickening the substrate in an area on the front opposite the edge, the thickened portion having a continuous transition to the substrate; depositing a membrane layer on the front having the locally oxidized area; and etching free the opening from the back to clear the membrane in such a way that the edge is located underneath the thickened area.

Abstract: A device for measuring the mass of a medium flowing in a line, which carries an intake air quantity of an internal combustion engine. The device includes a temperature-sensitive measuring element in a flow line in which the flowing medium circulates around the measuring element. The measurement conduit has deflection elements on the inlet and outlet sides of the measurement element for deflecting the flowing medium, through the conduit. The deflection elements on the inlet and outlet sides are disposed and embodied symmetrical to the measuring element disposed at the symmetry point.

Abstract: A conductor path contacting arrangement for contacting a first conductor path, which is applied on a substrate and covered with a first insulating layer, via a contact hole in the first insulating layer to a second conductor path. The contact hole overlies a region above the first conductor and a region, adjacent thereto, above the substrate; and inside the contact hole the second conductor path is stepped down from the contact region having the first conductor path toward the substrate therebeneath. This allows better control of the contact hole junction resistance.

Abstract: A sensor has a membrane, on which at least one resistor element is situated. The membrane has a membrane layer which is composed of a plurality of partial layers. In addition, a covering layer is provided which is composed of a plurality of partial layers. The partial layers of the membrane and the covering layer are selected so that both in the membrane and in the covering layer light tensile stresses are set, the tensile stresses preferably being roughly the same.

Abstract: A micromechanical acceleration sensor consists of a first semiconductor wafer and a second semiconductor wafer, where on the first semiconductor wafer first and second electrodes, are provided to create a variable capacitance and the second semiconductor wafer has a movable third electrode, and where on the first semiconductor wafer there is a microelectronic evaluation unit. The moveable electrode is a rocker suspended asymmetrically with regard to an axis of rotation such that each respective portion is of a different length and is opposite one of the first and second electrodes. A closed ring structure is disposed on the surface of the first semiconductor wafer.

Abstract: A sley drive for a loom has a shaft which is eccentric to an axis of rotation in order to provide partial weight balancing for the pivoting movement of the sley. Sley levers are mounted on the sley shaft with each having a clip-shaped part for clamping about the shaft by a screw which passes through legs of the sley levers on the side of the reed relative to the axis of the rotation. Intermediate bearings may also be secured to the sley shaft in the same manner as the sley levers.

Abstract: To check the presence of operating vacuum in vacuum switches, high voltage can be applied between the contacts at a given contact spacing and the dielectric strength can be tested. According to the invention, the procedure for vacuum monitoring is that a contact spacing (h) below the nominal stroke of the vacuum switch is selected and that the X-radiation generated at this contact spacing (h) and high voltage (U) in vacuum due to the field electron emission between the contacts by the contact surfaces acting as anode is acquired and evaluated as proof of the presence of operating vacuum inside the switching tube. This method can preferably be applied to encapsulated vacuum switching tubes, in particular to SF.sub.6 -insulated switching facilities.