Abstract: A wire harness includes a power supply line connected to a single 48 V battery that outputs a 48 V voltage; a power supply control box that receives the 48 V voltage via the power supply line, supplies the 48 V voltage to 48 V loads operating on the 48 V voltage, steps down the received 48 V voltage to provide a 12 V voltage lower than the 48 V voltage, and supplies the 12 V voltage to 12 V loads operating on the 12 V voltage; first supply lines that are provided in between the power supply control box and the 48 V loads to supply the 48 V voltage to the 48 V loads; and second supply lines that are provided in between the power supply control box and the 12 V loads to supply the 12 V voltage to the 12 V loads.

Abstract: A wire harness includes power source control boxes, electric wires, and connection wires. The power source control boxes are provided to respective sections. The electric wires connect the power source control boxes to power-requiring devices in the respective sections. The connection wires connect the power source control boxes provided to the respective sections to power-generating devices provided in at least one of the sections to perform power generation different from that performed by a regenerative brake while a vehicle is traveling. The power source control boxes supply electrical energy generated by the power-generating devices to the power-requiring devices in the sections in which the respective power source control boxes are provided.

Abstract: A wire harness includes a power line that extends from a power-supply control box to supply electrical power to one or more power-requiring devices; a communication line that extends from the power-supply control box to perform communication with one or more communication devices; a plurality of area drivers that are coupled with the power line and the communication line and are coupled to three or more of devices out of the one or more power-requiring devices and the one or more communication devices within each of areas; and individual electrical wires that couple the three or more of devices within the respective areas to the plurality of area drivers.

Abstract: Joint portions (12A to 12H) are formed at a constant interval on a wire harness main body (10). Each joint portion has a common shape and function, and is configured of wires which are respectively branched from wires (11a to 11d) that configure the wire harness main body (10), and connectors (13A to 13H) which have connection terminals connected to the wires.

Abstract: Disclosed are compositions comprising 90 to 99 weight percent trans-1,2-dichloroethylene, from 0.1 to 8 weight percent methylperfluoroheptene ethers and from 0.1 to 2.0 weight percent of 1,1,1,2,2,3,4,5,5,5-decafluoropentane, wherein the composition is non-flammable. The disclosure further provides a method for removing residue from a surface of an article comprising: (a) contacting the article with a composition comprising a composition of MPHE, HFC-4310mee and trans-1,2-dichloroethylene; and (b) recovering the surface from the composition.

Abstract: Disclosed are compositions comprising 90 to 99 weight percent trans-1,2-dichloroethylene, from 0.1 to 8 weight percent methylperfluoroheptene ethers and from 0.1 to 2.0 weight percent of 1,1,1,2,2,3,4,5,5,5-decafluoropentane, wherein the composition is non-flammable. The disclosure further provides a method for removing residue from a surface of an article comprising: (a) contacting the article with a composition comprising a composition of MPHE, HFC-4310mee and trans-1,2-dichloroethylene; and (b) recovering the surface from the composition.

Abstract: A lower electrode film, a ferroelectric film, and an upper electrode film are formed on an insulation film covering a transistor formed on a semiconductor substrate. Furthermore, a Pt film is formed as a cap layer on the upper electrode film. Then, a hard mask (a TiN film and an SiO2 film) of a predetermined pattern is formed on the Pt film, and the Pt film and the upper electrode film are etched. Then, an insulating protective film is formed on an entire surface, and a side surface of the upper electrode film is covered with the insulating protective film. Next, the ferroelectric film and the lower electrode film are etched, thus forming a ferroelectric capacitor.

Abstract: A workpiece mounting table (20) for an electric discharge machine, which machines a workpiece (12) by discharging electricity between an electrode and the workpiece (12) in an interior of a work tank (6) and removing a surface of the workpiece (12), includes a surface-plate mounting table (3) made of a conductive material and arranged at the bottom of the work tank (6), a plurality of insulating materials (2), each of which has a flat shape and is arranged and fixed on the surface-plate mounting table (3) with a gap (4) between the insulating materials (2) to constitute an insulating flat plate (30), and a surface plate (1) made of a metal material, fixed on the insulating flat plate (30) and insulated from the surface-plate mounting table (3) by the insulating flat plate (30), for fixing thereon the workpiece (12).

Abstract: A lower electrode film, a ferroelectric film, and an upper electrode film are formed on an insulation film covering a transistor formed on a semiconductor substrate. Furthermore, a Pt film is formed as a cap layer on the upper electrode film. Then, a hard mask (a TiN film and an SiO2 film) of a predetermined pattern is formed on the Pt film, and the Pt film and the upper electrode film are etched. Then, an insulating protective film is formed on an entire surface, and a side surface of the upper electrode film is covered with the insulating protective film. Next, the ferroelectric film and the lower electrode film are etched, thus forming a ferroelectric capacitor.

Abstract: A ferroelectric capacitor provided with a ferroelectric film (10a) is formed above a semiconductor substrate, and thereafter a wiring (17) directly connected to electrodes (9a, 11a) of a ferroelectric capacitor is formed. Then, a silicon oxide film (18) covering the wiring (17) is formed. As the silicon oxide film (18), a film which has processability higher than that of an aluminum oxide film is formed. Besides, a degree of damage that occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.

Abstract: A workpiece mounting table (20) for an electric discharge machine, which machines a workpiece (12) by discharging electricity between an electrode and the workpiece (12) in an interior of a work tank (6) and removing a surface of the workpiece (12), includes a surface-plate mounting table (3) made of a conductive material and arranged at the bottom of the work tank (6), a plurality of insulating materials (2), each of which has a flat shape and is arranged and fixed on the surface-plate mounting table (3) with a gap (4) between the insulating materials (2) to constitute an insulating flat plate (30), and a surface plate (1) made of a metal material, fixed on the insulating flat plate (30) and insulated from the surface-plate mounting table (3) by the insulating flat plate (30), for fixing thereon the workpiece (12).

Abstract: The present invention relates to a solvent composition for removing radioactive substance, characterized by comprising at least one selected from hydrofluorocarbon, hydrofluoroether, and perfluoroketone as a medium for transporting the radioactive substance, and a method for removing a radioactive substance characterized by using the solvent composition for removing.

Abstract: A fuel cell stack includes stacked unit fuel cells provided between end holding members, each unit fuel cell having a membrane electrode assembly including an anode and a cathode. A pair of separators respectively contact the anode and the cathode, and respectively form reaction gas passages between one separator and the anode, and between the other separator and the cathode. For each reaction gas passage, a gas supply passage and a gas discharge passage are formed through the unit fuel cells and one end holding member so that they communicate with the reaction gas passage of each unit fuel cell, and a drainage passage is also formed through the unit fuel cells and one end holding member. An end of the drainage passage and an end of the gas discharge passage on the side of the other end holding member are joined to each other.

Abstract: There is provided a method for manufacturing a semiconductor device, including, forming a first insulating film on a semiconductor substrate, forming a capacitor on the first insulating film, forming a second insulating film covering the capacitor, forming a metal wiring on the second insulating film, forming a first capacitor protective insulating film covering the metal wiring and the second insulating film, forming an insulating sidewall on a side of the metal wiring, forming a third insulating film on the insulating sidewall, forming a hole by etching the third insulating film under a condition that an etching rate of the insulating sidewall would be lower than that of the third insulating film, and forming a conductive plug inside the hole.

Abstract: A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided.

Abstract: Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.

Abstract: There is provided a method for manufacturing a semiconductor device, including, forming a first insulating film on a semiconductor substrate, forming a capacitor on the first insulating film, forming a second insulating film covering the capacitor, forming a metal wiring on the second insulating film, forming a first capacitor protective insulating film covering the metal wiring and the second insulating film, forming an insulating sidewall on a side of the metal wiring, forming a third insulating film on the insulating sidewall, forming a hole by etching the third insulating film under a condition that an etching rate of the insulating sidewall would be lower than that of the third insulating film, and forming a conductive plug inside the hole.

Abstract: Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.

Abstract: A fuel cell includes a plurality of fuel cell units, each fuel cell unit including an electrode assembly formed by disposing electrodes on both sides of an electrolyte, a pair of separators that sandwich the electrode assembly, and gas sealing members that are disposed at an outer peripheral portion of the electrode assembly, and that seal respective reaction gas flow passages that are formed between each separator and the electrode assembly. In one of the separators of each of the fuel cell units, a through path is formed that penetrates the separator in the thickness direction thereof, and the through path formed in one of the separators of one of the fuel cell units and the through path formed in one of the separators of adjacent one of the fuel cell units are offset with each other as viewed in the thickness direction of the separators.

Abstract: A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug (the conductive material constituting the plug is tungsten (W) for example). Here, an example is shown in which a base film of the conductive plug is the silicide film.